IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
MPN: IAUZN08S7L177ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.89 | $2,670.00 |
IAUZN08S7L177ATMA1 Overview
A power MOSFET is a voltage-controlled majority-carrier switch used to convert and route energy in switched-mode power supplies (SMPS), motor drives, load switches and protection circuits. Within the broader component taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors, and OptiMOS 7 represents Infineon's automotive-qualified 30 V-800 V power MOSFET platform optimized for low conduction loss, low switching loss and high avalanche ruggedness.
Key features include a 17.7 mΩ maximum RDS(on) at VGS=10 V, an ultra-low gate charge Qg typical of the OptiMOS 7 generation, logic-level VGS(th) for direct microcontroller drive, and 100% Rg and UIS tested. The automotive-grade qualification makes the device suitable for AEC-Q101 environments, while the 3x3 mm² S3O8 footprint enables compact PCB layouts for high-density power designs.
The OptiMOS 7 silicon uses an advanced trench MOSFET architecture with optimized cell pitch to balance RDS(on) and switching charge, delivering higher efficiency than OptiMOS 5/6 predecessors at the same footprint. Low thermal resistance to case (RthJC) supports high continuous currents, and the leadless PG-TSDSON-8-44 package provides low package inductance which is critical for fast-switching half-bridge and synchronous-rectifier stages.
Typical applications include 48 V mild-hybrid DC-DC converters, automotive e-fuse protection, battery management system (BMS) charge/discharge switches, LED driving front stages, and high-side/low-side motor control H-bridges. The 80 V rating gives ample headroom above 48 V bus transients.
When designing, ensure VGS drive is firmly in the 10 V enhancement region for lowest RDS(on), use a gate-source resistor to suppress parasitic oscillation, and observe land-pattern recommendations in the datasheet to keep the S3O8 thermal pad soldered for proper heat extraction.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet to support faster BOM decisions.
Drop-in alternatives for IAUZN08S7L177ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUZN08S7L177ATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN04S7L042GATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN10S5L280DATMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IAUC120N04S6N010ATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →IAUC120N04S6N009ATMA1
✅ Drop-In✓ In Stock
$1.6 / Unit
View Datasheet →IAUZN08S7L177ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 7 N-channel power MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 35 A (Tj) |
| Power Dissipation (PD) | 45 W (Tc) |
| On-Resistance (RDS(on)) | 17.7 mΩ max |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| Operating Temperature | -55C to +175C (Tj, automotive grade) |
| Configuration | Single |
| Qualification | AEC-Q101 automotive |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes |
| RoHS Status | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V |
IAUZN08S7L177ATMA1 Pin Configuration
| Pin 1 | GATE — Gate input - apply 10 V VGS for full enhancement |
| Pin 2 | SOURCE — Source connection (also Kelvin source on some pin maps) |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | DRAIN — Drain connection (also thermally bonded to pad) |
| Pin 6 | DRAIN — Drain connection |
| Pin 7 | DRAIN — Drain connection |
| Pin 8 | DRAIN — Drain connection |
| Pin PAD | DRAIN / THERMAL PAD — Exposed pad - drain and primary thermal path; must be soldered to PCB copper |
Safe Operating Area (DC, Tj=25°C)
Typical Applications
IAUZN08S7L177ATMA1 is suitable for 7 applications: 48 V Mild-Hybrid DC-DC Converter, Automotive e-Fuse / Solid-State Relay, Battery Management System (BMS) Charge/Discharge Switch, LED Driving Front Stage / Daytime Running Light, High-Side / Low-Side Motor Control H-Bridge, Industrial 24 V / 48 V Load Switch, USB-PD / Fast-Charge Sink Switch.
48 V Mild-Hybrid DC-DC Converter
The IAUZN08S7L177ATMA1's 80 V VDS, 17.7 mΩ max RDS(on) and S3O8 3x3 mm² footprint make it well-suited as a synchronous-rectifier or primary-side switch in 48 V mild-hybrid DC-DC converters. The 80 V rating comfortably covers 48 V bus transients up to ~60 V, while the low RDS(on) keeps conduction loss under 1 W at 10 A - critical for the 3-5 kW power levels common in mild-hybrid systems. Compared with a switching-only topology, using this part reduces heatsink area on the PCB and supports >96% efficiency targets. Pair with a 100 V gate driver and observe the datasheet's recommended gate-source resistor to suppress ringing.
Recommended
Automotive e-Fuse / Solid-State Relay
Used as the switching element in an automotive solid-state fuse, the IAUZN08S7L177ATMA1 provides fast, resettable over-current protection for 12 V and 24 V body-electronic loads. Its 80 V rating exceeds load-dump transients up to ~40 V on a 24 V bus, while the 35 A continuous drain current covers typical body-control module loads. Compared with a mechanical relay, the MOSFET-based e-fuse offers microsecond response, no contact bounce, and silent operation. The AEC-Q101 qualification is essential for chassis and under-hood e-fuse designs. Source the gate drive from a current-sense amplifier for closed-loop fold-back.
Recommended
Battery Management System (BMS) Charge/Discharge Switch
In a 12 V / 24 V lead-acid or Li-ion battery management system, the IAUZN08S7L177ATMA1 can serve as the low-loss charge/discharge FET, replacing mechanical contactors or older TrenchFET generations. Its 17.7 mΩ RDS(on) at 35 A dissipates roughly 21 W at peak, manageable with the S3O8 thermal pad bonded to a 1 sq. inch copper pour. The 80 V VDS margin covers 24 V bus transients during alternator load-dump. Automotive-grade qualification supports under-hood BMS installations. Pair with a dedicated battery monitor IC for cell balancing and over-current cutoff.
Recommended
LED Driving Front Stage / Daytime Running Light
The IAUZN08S7L177ATMA1 is well-suited as a high-side PWM switch for automotive LED daytime running lamps (DRL) and signal lighting. Its 80 V rating tolerates load-dump spikes, while the 35 A ID easily drives multi-LED strings up to 2-3 A per string. The low RDS(on) of 17.7 mΩ minimizes thermal rise during PWM dimming, and the S3O8 footprint allows a compact driver board. Compared with discrete BJT switches, the MOSFET's faster switching edges improve dimming linearity. Drive the gate from an automotive LED driver such as the TLD1125ELXUMA1.
Recommended
High-Side / Low-Side Motor Control H-Bridge
In automotive brushed DC or small BLDC motor H-bridges (window lift, seat adjust, fuel pump), the IAUZN08S7L177ATMA1 can be used for either the high-side or low-side switch in each half-bridge leg. Its 35 A continuous rating covers motors up to ~15 A RMS with proper thermal design, and the 80 V VDS margin handles the back-EMF spikes of 12 V/24 V motors. Compared with older MOSFET generations, the OptiMOS 7 platform reduces switching losses, enabling higher PWM frequencies and quieter motor operation. Verify dead-time insertion in the gate driver to prevent shoot-through.
Recommended
Industrial 24 V / 48 V Load Switch
Outside the automotive segment, the IAUZN08S7L177ATMA1 functions as a robust industrial 24 V/48 V load switch or hot-swap controller, leveraging its 80 V VDS margin and automotive-grade ruggedness. The 17.7 mΩ RDS(on) keeps steady-state losses low in continuous-duty 10-15 A loads, while the S3O8 package simplifies PCB thermal design. Compared with non-automotive MOSFETs, the AEC-Q101 qualification gives an extra safety margin in factory-automation environments with wide temperature swings. Add a TVS across drain-source for inductive load switching protection.
Recommended
USB-PD / Fast-Charge Sink Switch
In USB-PD or higher-voltage fast-charge sink applications, the IAUZN08S7L177ATMA1 can serve as the input protection / load switch on the device side, providing reverse-polarity and over-voltage protection up to 80 V. The 17.7 mΩ RDS(on) keeps voltage drop under 200 mV at 10 A charging current, preserving the PD contract voltage. Compared with dedicated load-switch ICs, the discrete MOSFET gives flexibility in gate-drive timing for inrush control. Drive the gate from a charge-controller companion and place a TVS upstream for surge protection.
Recommended
Recommended Products Summary
Engineering reference data for IAUZN08S7L177ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7L033ATMA1 | IAUCN04S7L042GATMA1 | IAUCN10S5L280DATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same | PG-TSDSON-8-44 (S3O8, 3x3 mm²) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 100 V | 60 V | 40 V |
| Continuous Drain Current (ID) | 35 A | 100 A | 100 A | 60 A | 60 A | 120 A |
| On-Resistance (RDS(on) max) | 17.7 mΩ | 3.3 mΩ | 4.2 mΩ | 28 mΩ | 3.0 mΩ | 1.0 mΩ |
| Power Dissipation (PD) | 45 W (Tc) | 70 W (Tc) | 60 W (Tc) | 45 W (Tc) | 50 W (Tc) | 60 W (Tc) |
| Generation / Family | OptiMOS 7 automotive | OptiMOS 7 automotive | OptiMOS 7 automotive | OptiMOS 5 automotive | OptiMOS 6 automotive | OptiMOS 6 automotive |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Optimized 80 V OptiMOS 7 silicon for 48 V automotive buses (vs IAUCN10S5L280DATMA1)
- Smaller die in same S3O8 footprint for compact designs (vs IAUCN08S7L033ATMA1)
- Higher VDS margin than 60 V / 40 V alternatives (vs IAUC60N04S6L030HATMA1)
Design Notes
Estimated: at 25 A continuous load with 17.7 mΩ RDS(on), steady-state conduction loss is roughly 11 W; with the S3O8 3x3 mm² package on 1 sq. inch of 2 oz copper, junction temperature rise stays within 60-70 C above ambient. For continuous currents above 20 A, expand the copper pour under the thermal pad to at least 2 sq. inches, or use internal PCB layers stitched with thermal vias to spread heat.
Keep the gate-loop area (gate-driver output -> gate -> source-return) as small as possible - use a Kelvin source pin if exposed, and place the gate series resistor (typically 10-47 Ω) within 5 mm of the gate pin. The drain-source switching loop must also be minimized to limit parasitic inductance which can over-voltage the die during fast switching transitions.
Drive the gate to 10 V for lowest RDS(on); 4.5 V VGS is insufficient to fully enhance the OptiMOS 7 cell and will increase on-resistance by 2-3x. Add a 100 kΩ gate-source pull-down to keep the device off during controller power-up. Verify the gate-driver peak sink/source current rating is adequate to charge the OptiMOS 7 Qg within the desired switching time.
Do not operate above 80 V VDS - avalanche at higher voltages can damage the die. For 24 V load-dump environments, place a TVS across drain-source (rated to clamp below 80 V) to absorb transient spikes. Also confirm that the S3O8 thermal pad is properly soldered: a dry joint will increase RthJA by 30-50% and cause thermal runaway at high current.
The fast-switching edges of OptiMOS 7 (sub-10 ns rise time) can produce EMI above 100 MHz. Use a snubber or gate-resistor tuning to slow the edges to 20-30 ns if EMI compliance is required, and ensure the drain-source loop area stays below 0.5 sq. cm. Common-mode chokes on input/output may also be required for Class B EMI limits.
Compliance Information
AEC-Q101 (automotive MOSFET standard, equivalent to AEC-Q100 for discretes) qualified per Infineon OptiMOS 7 automotive platform. RoHS and REACH compliant per Infineon product page. Halogen-free status not explicitly stated in verified data - set to unknown.
