IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
MPN: IQE065N10NM5CGSCATMA1 ✓ نشطIQE065N10NM5CGSCATMA1 نظرة عامة
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or interrupt current in power-conversion circuits such as DC-DC converters, motor drives, and load switches. The MOSFET belongs to the discrete semiconductor family, sitting at the boundary between power management ICs (which integrate control) and passive components (which store or filter). The key figures of merit are on-resistance (RDS(on), affecting conduction loss), gate charge (Qg, affecting switching loss), and thermal resistance (RthJA, determining power-handling capability). Lower RDS(on) and lower Qg reduce both conduction and switching losses, raising system efficiency.
Key features include 6.5 mOhm maximum RDS(on) at VGS=10V, a 100V VDS breakdown rating, 13A continuous drain current at ambient (85A at TC=25 C), and a power dissipation of 2.5W at TA or 100W at TC. The Source-Down PG-WHTFN-9-1 package delivers top-side cooling and a compact 3.3 mm x 3.3 mm footprint. The device also provides low gate charge for fast switching, an avalanche-rated body diode for inductive loads, and is lead-free and RoHS compliant.
The OptiMOS 5 process uses a trench-gate structure that minimizes cell pitch and reduces both RDS(on) and Qg, with a Figure of Merit (FOM = RDS(on) x Qg) optimized for high-frequency switching. The Source-Down configuration eliminates the traditional source-wire bonds, reducing parasitic inductance and improving both thermal and electrical performance in synchronous-rectification and hot-swap topologies.
Typical applications include server and telecom buck converters, brushless DC (BLDC) motor drives, industrial 48V e-fuse and hot-swap controllers, synchronous rectification in telecom isolated DC-DC modules, and high-current load switches in 24V-60V industrial buses. The wide safety margin between 100V rating and 48V/60V buses provides strong derating headroom for industrial reliability targets.
When designing with this MOSFET, ensure the gate-driver voltage reaches at least 10V to achieve the specified 6.5 mOhm on-resistance; lower VGS dramatically increases conduction loss. The Source-Down pad must be soldered to a copper pour on the top PCB layer with multiple thermal vias to the inner ground plane, since the top side is the primary heat-extraction path. Always check the SOA curve in the manufacturer datasheet for transient conditions such as motor inrush or hot-swap events.
This page synthesizes distributor pricing, drop-in alternatives from Infineon's OptiMOS 5 family, and practical Source-Down PCB layout guidance not consolidated in the manufacturer datasheet.
بدائل مباشرة لـ IQE065N10NM5CGSCATMA1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IQE065N10NM5CGSCATMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
IQEH50NE2LM7UCGSCATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IQE220N15NM5CGSCATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IQE036N08NM6CGSCATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IQE008N03LM5SCATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IQE012N03LM5CGSCATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC037N12NM6ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IQE065N10NM5CGSCATMA1 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| نوع الترانزستور | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25 C | 85 A |
| Continuous Drain Current (ID) at TA | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm |
| Power Dissipation at TA | 2.5 W |
| Power Dissipation at TC | 100 W |
| العلبة | PG-WHTFN-9-1 (Source-Down) |
| نوع التركيب | Surface Mount |
| Technology | OptiMOS 5 trench-gate |
| نطاق درجة حرارة التشغيل | -55 C to +150 C |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
دليل تكوين أطراف IQE065N10NM5CGSCATMA1 pg-whtfn-9-1 (source-down)
تكوين الأطراف لـ IQE065N10NM5CGSCATMA1 (حزمة pg-whtfn-9-1 (source-down)). يتميز جهاز الطاقة هذا بأطراف البوابة والمصرف والمصدر. بالنسبة للحزم غير المستقطبة، راجع ورقة بيانات الشركة المصنعة لمعرفة الاتجاه الدقيق للطرف 1 وتفاصيل البصمة. تشمل التطبيقات الشائعة تصميم مصادر الطاقة وتشغيل المحركات وتبديل الأحمال.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ IQE065N10NM5CGSCATMA1.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
منطقة التشغيل الآمن (DC, TC=25 C)
التطبيقات النموذجية
IQE065N10NM5CGSCATMA1 مناسب لـ 6 التطبيقs: Server and Telecom 48V Buck Converters, Brushless DC (BLDC) Motor Drive Half-Bridge, Industrial 48V e-Fuse and Hot-Swap Controller, Synchronous Rectification in Telecom Isolated DC-DC, High-Current 24V-48V Load Switch, USB-PD and High-Power Charging Power Stages.
Server and Telecom 48V Buck Converters
The IQE065N10NM5CGSCATMA1's 100V VDS rating provides strong headroom above 48V telecom and 60V industrial buses, and its 6.5 mOhm RDS(on) at VGS=10V minimizes conduction loss in continuous-conduction buck topologies. The Source-Down PG-WHTFN-9-1 package's top-side thermal pad lets the MOSFET dissipate heat directly into a top-layer copper pour, which is critical in dense server VRs where bottom-side cooling is already saturated by other heat sources. Compared with a standard 5x6 mm DFN at the same RDS(on), the Source-Down variant typically yields 20-30% lower junction temperature at full load.
موصى به
Brushless DC (BLDC) Motor Drive Half-Bridge
The IQE065N10NM5CGSCATMA1 is well suited to the low-side switch position in a 24V-60V BLDC motor drive thanks to its 100V VDS rating, 85A TC-rated current, and OptiMOS 5's low gate charge for fast PWM edges. The Source-Down package allows the low-side FET to be cooled from the same top copper layer as the high-side FET, simplifying PCB stack-up. The body diode's avalanche rating handles back-EMF during motor commutation, though adding a small RC snubber is recommended for hard-switched edges above 20 kHz.
موصى به
Industrial 48V e-Fuse and Hot-Swap Controller
In a 48V-60V hot-swap or e-fuse circuit, the IQE065N10NM5CGSCATMA1 serves as the main pass element that must survive inrush events and short-circuit transients. The 100V VDS rating gives a comfortable 40-50% derating margin above 60V, while 6.5 mOhm RDS(on) keeps steady-state dissipation low. The Source-Down thermal path is particularly valuable here because the PCB often sits in a sealed enclosure with only top-side copper accessible for cooling. Designers should still verify the SOA curve at the expected inrush duration.
موصى به
Synchronous Rectification in Telecom Isolated DC-DC
The IQE065N10NM5CGSCATMA1's 6.5 mOhm RDS(on) and OptiMOS 5's low Qg make it ideal for the synchronous rectifier position in telecom brick converters (typically 48V input, 12V output at 200-500W). The Source-Down package allows direct attachment to top-side copper, which simplifies thermal management in the brick's dense footprint. The 100V VDS provides sufficient margin for transients on the 48V bus while keeping conduction loss under 1% of output power.
موصى به
High-Current 24V-48V Load Switch
The IQE065N10NM5CGSCATMA1 functions as a high-side or low-side load switch in industrial power distribution, where its 85A TC current rating handles inrush of large capacitive loads. The Source-Down package lets the switch dissipate heat to top-side copper, which is often the only exposed metal in a sealed industrial enclosure. A simple gate-pulldown resistor plus a TVS across the drain-source provides robust protection against inductive kickback when switching solenoids or relays.
موصى به
USB-PD and High-Power Charging Power Stages
For USB-PD 3.1 extended-power-range adapters delivering 28V/36V/48V at 100-240W, the IQE065N10NM5CGSCATMA1 serves as the synchronous rectifier on the secondary side of a flyback or active-clamp forward converter. Its 100V VDS provides a 2x safety margin above 48V output transients, while 6.5 mOhm RDS(on) keeps rectifier loss under 0.5W at 5A output. The Source-Down package's compact 3.3 mm x 3.3 mm footprint leaves room for the controller, opto-isolator, and synchronous rectifiers in adapters below 130 cc.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IQE065N10NM5CGSCATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IQEH50NE2LM7UCGSCATMA1 | IQE220N15NM5CGSCATMA1 | IQE036N08NM6CGSCATMA1 | IQE008N03LM5SCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-TDSON-8 - DIFFERENT (not Source-Down) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 150 V | 80 V | 30 V | 120 V |
| RDS(on) max at VGS=10V | 6.5 mOhm | 50 mOhm | 22 mOhm | 3.6 mOhm | 0.8 mOhm | 3.7 mOhm |
| Technology | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 |
| Source-Down Architecture | Yes | Yes | Yes | Yes | Yes | No (standard DFN) |
أبرز الفروقات
- Source-Down architecture with top-side cooling (مقابلISC037N12NM6ATMA1)
- Lower RDS(on) for the same voltage class (مقابلIQE220N15NM5CGSCATMA1)
- Higher voltage rating than the 80V alternative (مقابلIQE036N08NM6CGSCATMA1)
ملاحظات التصميم
Estimated: At continuous 13A (TA-rated) with 6.5 mOhm RDS(on), conduction loss is about 1.1W. Without a top-side copper pour, the junction would rise 110 C above 25 C ambient (assuming 100 C/W RthJA on a small PCB). The Source-Down PG-WHTFN-9-1 package drops RthJA to roughly 35 C/W with 6 cm2 top-side copper, holding Tj rise near 38 C. Always provide at least 1 oz copper on the top layer directly under the source pad, plus an array of 0.3 mm thermal vias stitching to inner ground planes.
Use a 4-layer PCB with the top layer dedicated to source/down-pad copper. Stitch the source pad to inner ground planes with a 4x4 array of 0.3 mm thermal vias (1 oz copper plating). Keep the high-side drain loop area under 0.5 cm2 to minimize parasitic inductance, which can otherwise cause VDS spikes above 100V during switching. Place the gate-driver within 5 mm of the gate pin to limit gate-loop inductance below 5 nH.
Driving the gate with VGS=4.5V instead of 10V can raise RDS(on) by 2-3x, dramatically increasing conduction loss and potentially causing thermal runaway. Always verify the gate-driver output voltage under load. Also avoid exceeding the 100V VDS rating during inductive-switching transients - add a TVS or RC snubber across the drain-source if the application involves motors, solenoids, or transformers. The body diode is avalanche-rated but should not be used as a primary freewheeling path in continuous-conduction applications.
معلومات الامتثال
RoHS compliant per Infineon product page. Halogen-free status not explicitly stated in the verified web data; marked unknown. Not AEC-Q100 qualified (industrial/consumer grade).
