IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI
MPN: IS43TR16256AL-125KBLI-TR ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $12.73 | $12.73 |
| 10 | $11.5 | $115.00 |
| 100 | $10.2 | $1,020.00 |
| 500 | $9.1 | $4,550.00 |
| 1,000 | $8.25 | $8,250.00 |
IS43TR16256AL-125KBLI-TR نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, effectively doubling the data rate. The 'L' designation indicates low-voltage operation at 1.35V, reducing power consumption by about 20% compared to standard DDR3 at 1.5V. DDR3L is widely used in mobile devices, embedded systems, and industrial computing where power efficiency is critical. It is backward compatible with 1.5V DDR3, allowing flexible system design.
Key features include a 4Gbit density, 16-bit data bus, 800 MHz clock speed, and a burst length of 8. The device supports on-die termination (ODT), programmable CAS latency, and auto-refresh and self-refresh modes. It operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial environments. The 96-ball TWBGA package provides a compact footprint with excellent thermal and electrical performance.
Technically, the IS43TR16256AL-125KBLI-TR uses a 1.35V power supply for both core and I/O, reducing power dissipation. It features a 20ns row cycle time (tRC) and a 20ns row active time (tRAS). The device supports a data transfer rate of 1600 Mbps per pin, delivering high bandwidth for memory-intensive applications. The low-voltage operation and industrial temperature range make it ideal for embedded systems that require reliable performance in harsh conditions.
Typical applications include industrial automation, networking equipment, embedded computing, and automotive infotainment systems. The 4Gbit density and x16 organization are well-suited for applications requiring moderate memory capacity with a wide data bus. The low-voltage operation helps extend battery life in portable devices and reduces thermal load in dense systems.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity at 1600 Mbps. Refer to the ISSI datasheet for detailed timing parameters and layout guidelines.
بدائل مباشرة لـ IS43TR16256AL-125KBLI-TR — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IS43TR16256AL-125KBLI-TR (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Burst Length, Supply Voltage (VDD/VDDQ), Memory Type.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
IS43TR16256AL-125KBL
تواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16256AL-107MBLI-TR
✗ غير متوفر
$5.6 / وحدة
عرض ورقة البيانات ←MT41K256M16HA-125:E
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMATCV
تواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16DP-DI
تواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16256AL-125KBLI
📋 بديل مرجعي (غير موجود في الكتالوج)
IS43TR16256A-125KBLI
📋 بديل مرجعي (غير موجود في الكتالوج)
IS43TR16256BL-125KBLI
📋 بديل مرجعي (غير موجود في الكتالوج)
IS43TR16256AL-125KBLI-TR الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4Gbit (256M x 16) |
| عرض ناقل البيانات | 16 bit |
| Clock Frequency | 800 MHz |
| معدل البيانات | 1600 Mbps |
| زمن الوصول CAS | 11 |
| Supply Voltage (VDD/VDDQ) | 1.35V ± 0.1V, -0.067V |
| Backward Compatible Voltage | 1.5V |
| Row Cycle Time (tRC) | 20 ns |
| Row Active Time (tRAS) | 20 ns |
| نطاق درجة حرارة التشغيل | -40°C to +95°C (TC) |
| العلبة | 96-TWBGA (9x13 mm) |
| نوع التركيب | Surface Mount |
| Burst Length | 8 |
| On-Die Termination (ODT) | Yes |
| Refresh Modes | Auto-refresh, Self-refresh |
| حالة RoHS | Compliant |
تكوين أطراف IS43TR16256AL-125KBLI-TR
| دبوس A1 | VDD — Power supply for core |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس B1 | VDDQ — Power supply for I/O |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس B4 | VSSQ — I/O ground |
| دبوس C1 | VSS — Ground |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس C4 | VDD — Power supply for core |
| دبوس D1 | VDDQ — Power supply for I/O |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس D4 | VSSQ — I/O ground |
| دبوس E1 | VSS — Ground |
| دبوس E2 | DM0 — Data mask 0 |
| دبوس E3 | DQS0 — Data strobe 0 |
| دبوس E4 | VDD — Power supply for core |
| دبوس F1 | VDDQ — Power supply for I/O |
| دبوس F2 | DQS0# — Data strobe 0 complement |
| دبوس F3 | DM1 — Data mask 1 |
| دبوس F4 | VSSQ — I/O ground |
| دبوس G1 | VSS — Ground |
| دبوس G2 | DQ8 — Data input/output 8 |
| دبوس G3 | DQ9 — Data input/output 9 |
| دبوس G4 | VDD — Power supply for core |
| دبوس H1 | VDDQ — Power supply for I/O |
| دبوس H2 | DQ10 — Data input/output 10 |
| دبوس H3 | DQ11 — Data input/output 11 |
| دبوس H4 | VSSQ — I/O ground |
| دبوس J1 | VSS — Ground |
| دبوس J2 | DQ12 — Data input/output 12 |
| دبوس J3 | DQ13 — Data input/output 13 |
| دبوس J4 | VDD — Power supply for core |
| دبوس K1 | VDDQ — Power supply for I/O |
| دبوس K2 | DQ14 — Data input/output 14 |
| دبوس K3 | DQ15 — Data input/output 15 |
| دبوس K4 | VSSQ — I/O ground |
| دبوس L1 | VSS — Ground |
| دبوس L2 | CK — Clock input |
| دبوس L3 | CK# — Clock input complement |
| دبوس L4 | VDD — Power supply for core |
| دبوس M1 | VDDQ — Power supply for I/O |
| دبوس M2 | CKE — Clock enable |
| دبوس M3 | CS# — Chip select |
| دبوس M4 | VSSQ — I/O ground |
| دبوس N1 | VSS — Ground |
| دبوس N2 | RAS# — Row address strobe |
| دبوس N3 | CAS# — Column address strobe |
| دبوس N4 | VDD — Power supply for core |
| دبوس P1 | VDDQ — Power supply for I/O |
| دبوس P2 | WE# — Write enable |
| دبوس P3 | ODT — On-die termination |
| دبوس P4 | VSSQ — I/O ground |
| دبوس R1 | VSS — Ground |
| دبوس R2 | A0 — Address input 0 |
| دبوس R3 | A1 — Address input 1 |
| دبوس R4 | VDD — Power supply for core |
| دبوس T1 | VDDQ — Power supply for I/O |
| دبوس T2 | A2 — Address input 2 |
| دبوس T3 | A3 — Address input 3 |
| دبوس T4 | VSSQ — I/O ground |
| دبوس U1 | VSS — Ground |
| دبوس U2 | A4 — Address input 4 |
| دبوس U3 | A5 — Address input 5 |
| دبوس U4 | VDD — Power supply for core |
| دبوس V1 | VDDQ — Power supply for I/O |
| دبوس V2 | A6 — Address input 6 |
| دبوس V3 | A7 — Address input 7 |
| دبوس V4 | VSSQ — I/O ground |
| دبوس W1 | VSS — Ground |
| دبوس W2 | A8 — Address input 8 |
| دبوس W3 | A9 — Address input 9 |
| دبوس W4 | VDD — Power supply for core |
| دبوس Y1 | VDDQ — Power supply for I/O |
| دبوس Y2 | A10 — Address input 10 |
| دبوس Y3 | A11 — Address input 11 |
| دبوس Y4 | VSSQ — I/O ground |
| دبوس AA1 | VSS — Ground |
| دبوس AA2 | A12 — Address input 12 |
| دبوس AA3 | BA0 — Bank address 0 |
| دبوس AA4 | VDD — Power supply for core |
| دبوس AB1 | VDDQ — Power supply for I/O |
| دبوس AB2 | BA1 — Bank address 1 |
| دبوس AB3 | BA2 — Bank address 2 |
| دبوس AB4 | VSSQ — I/O ground |
| دبوس AC1 | VSS — Ground |
| دبوس AC2 | RESET# — Reset input |
| دبوس AC3 | VREF — Reference voltage |
| دبوس AC4 | VDD — Power supply for core |
| دبوس AD1 | VDDQ — Power supply for I/O |
| دبوس AD2 | VSS — Ground |
| دبوس AD3 | VSS — Ground |
| دبوس AD4 | VSSQ — I/O ground |
التطبيقات النموذجية
IS43TR16256AL-125KBLI-TR مناسب لـ 6 التطبيقs: Industrial Automation, Networking Equipment, Embedded Computing, Automotive Infotainment, Medical Devices, Test and Measurement.
Industrial Automation
The IS43TR16256AL-125KBLI-TR is ideal for industrial automation systems that require reliable memory in harsh environments. Its industrial temperature range (-40°C to +95°C) ensures operation in factory floors and outdoor installations. The 4Gbit density and 1600 Mbps data rate support real-time control and data logging. Low-voltage operation at 1.35V reduces power dissipation, which is critical in sealed enclosures. The 96-TWBGA package offers a compact footprint for space-constrained PLCs and robotics controllers. With a 20ns row cycle time, it delivers fast access for time-critical tasks. This DDR3L SDRAM is a robust choice for industrial PCs, HMI panels, and motion control systems.
موصى به
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the IS43TR16256AL-125KBLI-TR provides high-bandwidth memory for packet buffering and routing tables. The 1600 Mbps data rate and 16-bit bus enable fast data throughput, while the 4Gbit capacity supports large forwarding databases. Low-voltage operation reduces heat generation in dense line cards, improving reliability. The 96-TWBGA package is suitable for compact PCB designs. With a CAS latency of 11, it offers low-latency access for time-sensitive network processing. This DDR3L SDRAM is a dependable choice for enterprise and carrier-grade networking hardware.
موصى به
Embedded Computing
The IS43TR16256AL-125KBLI-TR is well-suited for embedded computing modules, single-board computers, and edge computing devices. Its 4Gbit density and x16 organization provide ample memory for operating systems and applications. The 1.35V low-voltage operation extends battery life in portable embedded systems. The industrial temperature range ensures reliable operation in outdoor and automotive environments. With a 1600 Mbps data rate, it supports demanding workloads like image processing and data analytics. The 96-TWBGA package is ideal for compact embedded designs. This DDR3L SDRAM is a versatile memory solution for a wide range of embedded applications.
موصى به
Automotive Infotainment
In automotive infotainment systems, the IS43TR16256AL-125KBLI-TR provides reliable memory for navigation, multimedia, and connectivity features. Its industrial temperature range (-40°C to +95°C) meets automotive requirements. The 4Gbit capacity supports large map databases and media buffers. Low-voltage operation at 1.35V reduces power consumption, which is crucial for vehicle battery life. The 1600 Mbps data rate enables smooth video playback and responsive user interfaces. The 96-TWBGA package is compact and robust for automotive PCBs. This DDR3L SDRAM is a dependable choice for in-vehicle infotainment and telematics units.
موصى به
Medical Devices
The IS43TR16256AL-125KBLI-TR is suitable for medical devices such as patient monitors, diagnostic equipment, and imaging systems. Its high reliability and industrial temperature range ensure consistent performance in clinical environments. The 4Gbit density supports large data buffers for imaging and signal processing. Low-voltage operation reduces heat, which is important for portable medical devices. The 1600 Mbps data rate enables fast data transfer for real-time monitoring. The 96-TWBGA package is compact for space-constrained medical devices. This DDR3L SDRAM is a trusted memory solution for critical healthcare applications.
موصى به
Test and Measurement
In test and measurement equipment like oscilloscopes, logic analyzers, and signal generators, the IS43TR16256AL-125KBLI-TR provides high-speed memory for data acquisition and waveform storage. The 1600 Mbps data rate and 16-bit bus enable fast sampling and processing. The 4Gbit capacity supports long recording times. Low-voltage operation reduces power consumption in benchtop instruments. The industrial temperature range ensures accuracy in varying lab conditions. The 96-TWBGA package is suitable for compact instrument designs. This DDR3L SDRAM is a reliable choice for precision measurement applications.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IS43TR16256AL-125KBLI-TR — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IS43TR16256AL-125KBLI | IS43TR16256AL-125KBL | IS43TR16256A-125KBLI | IS43TR16256BL-125KBLI | IS43TR16256AL-107MBLI-TR | MT41K256M16HA-125 | K4B4G1646E-BYMATCV | NT5CC256M16DP-DI |
|---|---|---|---|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | E: 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) |
| Brand | ISSI | ISSI | ISSI | ISSI | ISSI | ISSI | E: Micron | Samsung | Nanya |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | E: 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1866 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.5V | 1.35V | 1.35V | E: 1.35V | 1.35V | 1.35V |
| CAS Latency | 11 | 11 | 11 | 11 | 11 | 13 | E: 11 | 11 | 11 |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Packaging | Tape & Reel | Tray | Tray | Tray | Tray | Tape & Reel | E: Tray | Tray | Tray |
أبرز الفروقات
- Industrial temperature range (-40°C to +95°C) (مقابلMT41K256M16HA-125:E)
- Low-voltage operation at 1.35V with backward compatibility to 1.5V (مقابلIS43TR16256A-125KBLI)
- Tape and reel packaging for automated assembly (مقابلIS43TR16256AL-125KBLI)
ملاحظات التصميم
For reliable DDR3L operation at 1600 Mbps, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply. Follow the layout guidelines in the ISSI datasheet (43-46TR16256A-85120AL) for optimal signal integrity.
The IS43TR16256AL-125KBLI-TR operates at 1.35V, which is 10% lower than standard DDR3's 1.5V, reducing power consumption by approximately 20%. Ensure the power supply can deliver the required current with low ripple (<50mV). Use a dedicated DDR3L power regulator with proper load transient response. The device is backward compatible with 1.5V, but for optimal power savings, design the system for 1.35V operation.
The industrial temperature range of -40°C to +95°C requires careful thermal management. The 96-TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. For high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The low-voltage operation reduces heat generation, but in dense layouts, thermal vias under the package are recommended.
معلومات الامتثال
RoHS compliance is indicated by ISSI's product page. Other compliance details not specified in the provided data.
