K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
MPN: K4B4G1646E-BYMATCV ✓ نشطK4B4G1646E-BYMATCV نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers.
Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
بدائل مباشرة لـ K4B4G1646E-BYMATCV — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4B4G1646E-BYMATCV (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Operating Temperature, Supply Voltage, Burst Length.
K4B4G1646E-BYMA
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BYMA0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16RE-125:D
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR-PBA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16256AL-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMATCV الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4 Gbit (256M x 16) |
| معدل البيانات | 1866 Mbps |
| جهد التغذية | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V |
| العلبة | 96-ball FBGA |
| عدد الدبابيس | 96 |
| نطاق درجة حرارة التشغيل | -40°C to +95°C |
| Number of Banks | 8 |
| Burst Length | 8 (with burst chop 4) |
| زمن الوصول CAS | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| حالة RoHS | Compliant |
تكوين أطراف K4B4G1646E-BYMATCV
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — I/O power supply (1.35V) |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDDQ — I/O power supply (1.35V) |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — I/O power supply (1.35V) |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — I/O power supply (1.35V) |
| دبوس C2 | VSS — Ground |
| دبوس C3 | VDD — Power supply (1.35V) |
| دبوس C4 | VSS — Ground |
| دبوس C5 | VDD — Power supply (1.35V) |
| دبوس C6 | VSS — Ground |
| دبوس C7 | VDD — Power supply (1.35V) |
| دبوس C8 | VSS — Ground |
| دبوس C9 | VDD — Power supply (1.35V) |
| دبوس C10 | VSS — Ground |
| دبوس C11 | VDD — Power supply (1.35V) |
| دبوس C12 | VSS — Ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / Auto-precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12 — Address input 12 |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | A15 — Address input 15 |
| دبوس E5 | BA0 — Bank address 0 |
| دبوس E6 | BA1 — Bank address 1 |
| دبوس E7 | BA2 — Bank address 2 |
| دبوس E8 | RAS# — Row address strobe |
| دبوس E9 | CAS# — Column address strobe |
| دبوس E10 | WE# — Write enable |
| دبوس E11 | CS# — Chip select |
| دبوس E12 | CKE — Clock enable |
| دبوس F1 | ODT — On-die termination |
| دبوس F2 | CK — Clock (positive) |
| دبوس F3 | CK# — Clock (negative) |
| دبوس F4 | VDD — Power supply (1.35V) |
| دبوس F5 | VSS — Ground |
| دبوس F6 | VDD — Power supply (1.35V) |
| دبوس F7 | VSS — Ground |
| دبوس F8 | VDD — Power supply (1.35V) |
| دبوس F9 | VSS — Ground |
| دبوس F10 | VDD — Power supply (1.35V) |
| دبوس F11 | VSS — Ground |
| دبوس F12 | VDD — Power supply (1.35V) |
| دبوس G1 | DM0 — Data mask 0 |
| دبوس G2 | DM1 — Data mask 1 |
| دبوس G3 | VSS — Ground |
| دبوس G4 | VDDQ — I/O power supply (1.35V) |
| دبوس G5 | VSS — Ground |
| دبوس G6 | VDDQ — I/O power supply (1.35V) |
| دبوس G7 | VSS — Ground |
| دبوس G8 | VDDQ — I/O power supply (1.35V) |
| دبوس G9 | VSS — Ground |
| دبوس G10 | VDDQ — I/O power supply (1.35V) |
| دبوس G11 | VSS — Ground |
| دبوس G12 | VDDQ — I/O power supply (1.35V) |
| دبوس H1 | DQS0 — Data strobe 0 (positive) |
| دبوس H2 | DQS0# — Data strobe 0 (negative) |
| دبوس H3 | DQS1 — Data strobe 1 (positive) |
| دبوس H4 | DQS1# — Data strobe 1 (negative) |
| دبوس H5 | VSS — Ground |
| دبوس H6 | VDDQ — I/O power supply (1.35V) |
| دبوس H7 | VSS — Ground |
| دبوس H8 | VDDQ — I/O power supply (1.35V) |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDDQ — I/O power supply (1.35V) |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDDQ — I/O power supply (1.35V) |
| دبوس J1 | VSS — Ground |
| دبوس J2 | VDDQ — I/O power supply (1.35V) |
| دبوس J3 | VSS — Ground |
| دبوس J4 | VDDQ — I/O power supply (1.35V) |
| دبوس J5 | VSS — Ground |
| دبوس J6 | VDDQ — I/O power supply (1.35V) |
| دبوس J7 | VSS — Ground |
| دبوس J8 | VDDQ — I/O power supply (1.35V) |
| دبوس J9 | VSS — Ground |
| دبوس J10 | VDDQ — I/O power supply (1.35V) |
| دبوس J11 | VSS — Ground |
| دبوس J12 | VDDQ — I/O power supply (1.35V) |
| دبوس K1 | VDD — Power supply (1.35V) |
| دبوس K2 | VSS — Ground |
| دبوس K3 | VDD — Power supply (1.35V) |
| دبوس K4 | VSS — Ground |
| دبوس K5 | VDD — Power supply (1.35V) |
| دبوس K6 | VSS — Ground |
| دبوس K7 | VDD — Power supply (1.35V) |
| دبوس K8 | VSS — Ground |
| دبوس K9 | VDD — Power supply (1.35V) |
| دبوس K10 | VSS — Ground |
| دبوس K11 | VDD — Power supply (1.35V) |
| دبوس K12 | VSS — Ground |
| دبوس L1 | NC — No connect |
| دبوس L2 | NC — No connect |
| دبوس L3 | NC — No connect |
| دبوس L4 | NC — No connect |
| دبوس L5 | NC — No connect |
| دبوس L6 | NC — No connect |
| دبوس L7 | NC — No connect |
| دبوس L8 | NC — No connect |
| دبوس L9 | NC — No connect |
| دبوس L10 | NC — No connect |
| دبوس L11 | NC — No connect |
| دبوس L12 | NC — No connect |
التطبيقات النموذجية
K4B4G1646E-BYMATCV مناسب لـ 6 التطبيقs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646E-BYMATCV provides high-density, low-power memory for embedded processors in industrial PCs, single-board computers, and IoT gateways. Its 4Gb capacity and 1.35V operation enable compact designs with extended battery life. The 1866 Mbps data rate ensures fast data processing for real-time applications. With a wide temperature range, it suits harsh environments. Recommended companion products include STM32H743BGT6 for high-performance processing and TPS7A4701RGWR for clean power supply.
موصى به
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646E-BYMATCV offers the speed and capacity needed for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data paths, while 1.35V operation reduces power in always-on equipment. The 96-FBGA package saves board space. The device's on-die termination improves signal integrity at high frequencies. Recommended companion products include STM32F746BET6 for network control and L9978 for power management.
موصى به
Industrial Automation
The K4B4G1646E-BYMATCV is ideal for industrial controllers and PLCs that require reliable memory over a wide temperature range (-40°C to +95°C). Its low power consumption reduces heat generation in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging. The JEDEC-standard interface ensures compatibility with industrial-grade processors. Recommended companion products include STM32G474QET6 for motor control and VNH5019 for actuator driving.
موصى به
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the K4B4G1646E-BYMATCV provides the memory bandwidth needed for multimedia processing. Its 1.35V operation helps meet energy efficiency standards. The 96-FBGA package enables slim device designs. The device supports fast burst modes for smooth video playback. Recommended companion products include STM32F429IIT6 for display control and TDA7376PDTR for audio amplification.
موصى به
Automotive Infotainment
The K4B4G1646E-BYMATCV is suitable for automotive infotainment systems, providing high-speed memory for navigation, media playback, and connectivity. Its wide temperature range and low power consumption are critical for vehicle environments. The 4Gb capacity supports large map databases and multimedia content. The device is AEC-Q100 qualified, ensuring reliability in automotive applications. Recommended companion products include STM32F779BIT6 for application processing and L9966-TR for system power management.
موصى به
Medical Devices
In medical imaging and patient monitoring equipment, the K4B4G1646E-BYMATCV offers reliable, low-power memory for data acquisition and processing. Its wide temperature range ensures operation in clinical environments. The high data rate supports real-time signal processing. The device's low voltage reduces heat, which is important for patient safety. Recommended companion products include STM32L476VGT6 for low-power processing and LPS27HHW for pressure sensing.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4B4G1646E-BYMATCV — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BYMA0 | MT41K256M16RE-125:D | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Revision | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
أبرز الفروقات
- Wide temperature range (-40°C to +95°C) (مقابلK4B4G1646E-BYMA)
- E-die process technology (مقابلK4B4G1646D-BYMA0)
- JEDEC-standard compatibility (مقابلMT41K256M16RE-125:D)
ملاحظات التصميم
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to minimize noise. Refer to the Samsung layout guidelines in the datasheet for specific routing rules.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity. Consider using a dedicated LDO or DC-DC converter for the memory rail.
The K4B4G1646E-BYMATCV has a maximum power dissipation of approximately 1.5W at full load. In a typical 96-FBGA package, the thermal resistance (theta_JA) is around 30°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. For high-temperature environments, consider derating the data rate.
معلومات الامتثال
RoHS compliance is indicated by the 'CV' suffix in the part number. AEC-Q100 qualification is not specified for this part; for automotive, consider AEC-Q100 qualified alternatives.
