K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
MPN: K3LK4L40DM-BGCT ✓ نشطK3LK4L40DM-BGCT نظرة عامة
DRAM is the workhorse memory technology of modern electronics: it stores each bit as a charge on a capacitor within a transistor-capacitor cell, providing high density and fast random access at low cost per gigabyte, but requiring periodic refresh to retain data. Within the memory hierarchy, DRAM sits between CPU caches (SRAM) and non-volatile storage (NAND flash), serving as the main working memory in smartphones, tablets, networking equipment, industrial controllers, and PCs. A DRAM component such as this is the building block from which memory modules (DIMMs) and stacked memory subsystems are assembled.
Samsung Electronics is the world's largest DRAM manufacturer, and this part follows Samsung's structured naming convention where the K-prefix identifies DRAM products and the -BGCT suffix denotes a BGA-packaged, lead-free (G = RoHS-compliant green) commercial temperature offering. Key selection parameters for DRAM components include density, bus width, data rate, operating voltage class, and package ball count; buyers should consult the manufacturer datasheet for the exact values of these parameters for this ordering code.
Typical applications include mobile device main memory, consumer electronics such as smart TVs and set-top boxes, and embedded systems including industrial HMI and networking platforms where dense, high-bandwidth volatile memory is required alongside an application processor or SoC with a compatible memory controller.
When designing in this component, verify that your memory controller timing settings (CAS latency, burst length, refresh interval) match the datasheet speed grade, and follow Samsung's layout guidelines for fly-by/daisy-chain routing and VDDQ decoupling. Signal integrity at high data rates demands controlled impedance and length-matched traces.
This page synthesizes distributor pricing references, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single citation-ready resource.
بدائل مباشرة لـ K3LK4L40DM-BGCT — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K3LK4L40DM-BGCT (نفس عامل الشكل والبصمة) — يختلف في Package, Memory Type, Density, Data Rate, Interface.
K3KL3L30CM-BGCT
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A4G085WD-BCRC
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A4G165WF-BCTD
✅ بديل مباشر✓ متوفر في المخزون
$8.2031 / وحدة
عرض ورقة البيانات ←MT40A512M8RH-075E:B
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT40A256M16GE-075E:B
✅ بديل مباشر✗ غير متوفر
$3.95 / وحدة
عرض ورقة البيانات ←K3LK4L40DM-BGCT الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DRAM (SDRAM component) |
| Manufacturer | Samsung Electronics |
| Package Type | BGA (per -BGC ordering-code suffix) |
| نوع التركيب | Surface Mount |
دليل تكوين أطراف K3LK4L40DM-BGCT bga (per -bgc ordering-code suffix)
تكوين الأطراف لـ K3LK4L40DM-BGCT (حزمة bga (per -bgc ordering-code suffix)). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ K3LK4L40DM-BGCT.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
K3LK4L40DM-BGCT مناسب لـ 6 التطبيقs: Mobile Device Main Memory, Consumer Electronics, Embedded Systems, Networking and Communications Equipment, Memory Module and Stacked Assembly, Smart Home and IoT Hubs.
Mobile Device Main Memory
Samsung K3-series DRAM components like the K3LK4L40DM-BGCT are widely documented as main system memory in smartphones and tablets, paired with Qualcomm, MediaTek, or Samsung Exynos application processors. The BGA package supports the fine-pitch, low-profile mounting required inside thin mobile form factors, and Samsung's mobile-class DRAM process delivers the bandwidth-per-watt that battery-powered devices demand. In this role the DRAM serves as the volatile working memory for the OS and applications; its data rate directly determines multitasking responsiveness. Layout should follow the application processor vendor's memory routing guidelines with length-matched data groups. Third-party repair documentation (inmobile.info) confirms this part family's use across multiple phone models, underlining its role in the mobile supply chain.
موصى به
Consumer Electronics
Set-top boxes, smart TVs, and gaming peripherals require cost-effective DRAM for frame buffers and application workloads. The K3LK4L40DM-BGCT's BGA surface-mount construction suits high-volume reflow assembly typical of consumer manufacturing, and Samsung's green (RoHS-coded) packaging satisfies global environmental regulations for consumer goods. In set-top box designs the DRAM typically partners an SoC such as an Amlogic or MediaTek platform, where its bandwidth supports 4K video decode buffering. Because consumer products are price-sensitive, the spot-market availability documented by distributors like Win Source and ICAllIn makes this part attractive for mid-volume builds. Verify operating temperature against the enclosure's thermal profile, since sealed set-top enclosures can push ambient well above 70C.
موصى به
Embedded Systems
Industrial embedded controllers, HMI panels, and networking equipment use DRAM components of this class as main memory alongside MCUs or application processors. The K3LK4L40DM-BGCT's BGA footprint supports the compact, conformal-coatable assemblies common in industrial hardware, and its Samsung DRAM lineage means mature controller support and errata documentation. Designers should confirm the commercial temperature coding implied by the -CT suffix against the industrial enclosure environment; extended-temperature Samsung variants may be preferable for harsh environments. Memory controller timing files (CAS latency, refresh interval) must match the datasheet speed bin. On XAIPART, companion TI Sitara-class processors and power management parts are available to complete the embedded memory subsystem design.
موصى به
Networking and Communications Equipment
Routers, switches, and gateway platforms demand high-bandwidth DRAM for packet buffering and control-plane software. A Samsung DRAM component such as the K3LK4L40DM-BGCT provides the random-access performance that network processors and communication SoCs require, with BGA packaging enabling dense multi-chip memory arrays on limited board area. At gigabit-class line rates, memory bandwidth often gates throughput, so the datasheet data rate should be budgeted against the packet-processing workload. Signal integrity at high data rates demands controlled-impedance routing and length-matched trace groups per Samsung's layout guidelines. XAIPART stocks companion networking silicon including TI interface and USB hub devices for completing communications platform designs.
موصى به
Memory Module and Stacked Assembly
DRAM components like the K3LK4L40DM-BGCT serve as the base die for module-level and stacked memory assemblies, including custom memory-down PCBA designs and SODIMM-style solutions. Samsung's structured K3/K4 naming and JEDEC-aligned ballouts simplify multi-vendor qualification when paired with the drop-in alternatives listed on this page. In memory-down designs, the component is placed directly on the host PCB rather than on a removable module, reducing height and cost; this requires committing to the exact ball count and pinout at PCB layout time, making early datasheet verification essential. Thermal design matters: multiple DRAM components clustered together raise local ambient, so copper pours under the BGA are recommended for heat spreading.
موصى به
Smart Home and IoT Hubs
IoT gateways, smart speakers, and camera hubs require DRAM capacity for local buffering, edge inference workloads, and multitasking firmware. The K3LK4L40DM-BGCT in BGA packaging fits the space-constrained, cost-optimized architectures typical of smart home hardware, and Samsung's green packaging supports the environmental certifications these consumer-facing products require. The DRAM typically pairs with an SoC running Linux, where 1-4 Gb class densities balance cost against OTA-update headroom. Because these devices run continuously, verify refresh-induced standby power against the product's energy-star targets. XAIPART's sensor and wireless module catalog provides companion components for complete IoT hub reference designs.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K3LK4L40DM-BGCT — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K3KL3L30CM-BGCT | K4A4G085WD-BCRC | MT40A512M8RH-075E:B | MT40A256M16GE-075E:B |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Micron Technology |
| Package | BGA | BGA (same family) | BGA (FBGA DDR4 class) | BGA (FBGA DDR4 class) | BGA (FBGA DDR4 class) |
| Memory Class | DRAM (SDRAM component) | DRAM | DRAM (DDR4) | DRAM (DDR4) | DRAM (DDR4) |
| Lead-Free / Green Package | Yes (per -G ordering-code convention) | Yes (per -G convention) | Yes (per -G convention) | Yes (E:B suffix, lead-free) | Yes (E:B suffix, lead-free) |
أبرز الفروقات
- Samsung fab-direct supply chain with same-family second sources (مقابلK3KL3L30CM-BGCT)
- Cross-brand JEDEC-standard DDR4 interchange path (مقابلMT40A512M8RH-075E:B)
- Green/RoHS-coded packaging (مقابلK4A4G165WF-BCTD)
ملاحظات التصميم
At DRAM data rates, route address/command and data buses as length-matched groups with controlled impedance (typically 50 ohm single-ended, 100 ohm differential where applicable). Follow Samsung's recommended topology (fly-by or daisy-chain per the memory generation) and keep trace stubs minimal. Read ODT (on-die termination) settings must be tuned against your board's impedance profile; improper ODT is the most common cause of marginal eye diagrams. Verify timing with the datasheet's AC timing table for the exact speed bin of this ordering code.
Provide separate, clean VDD and VDDQ rails with dense local decoupling: place multiple 0.1uF and 0.01uF ceramic capacitors at each BGA ball cluster plus bulk capacitance per rail. Estimated: for a 4 Gb class DDR device, peak VDDQ transient currents can reach several hundred milliamps during simultaneous write bursts, so a buck regulator with fast transient response (e.g., TI TPS54218 class) is appropriate for the VDDQ rail. Confirm exact rail voltages and tolerances from the Samsung datasheet, since the memory generation determines whether 1.2V, 1.35V, or 1.5V rails apply.
Do not substitute DRAM ordering codes without verifying density, organization, speed grade, and ball count - the L30 versus L40 difference between K3KL3L30CM-BGCT and this part may encode a different speed bin, causing intermittent boot failures only under load or temperature. Also avoid sourcing from unverified spot-market brokers without date-code and authenticity checks; DRAM is a frequent counterfeit target. Finally, confirm the commercial temperature rating of the -CT suffix against your enclosure's worst-case internal ambient.
معلومات الامتثال
Samsung's -G ordering-code convention denotes green (lead-free/halogen-free) packaging, but explicit RoHS/REACH certification is not present in the provided distributor data and must be confirmed from Samsung's official compliance documentation.
