K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
MPN: K4A4G085WD-BCRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.26 | $4.26 |
| 10 | $3.92 | $39.20 |
| 100 | $3.58 | $358.00 |
| 500 | $3.25 | $1,625.00 |
| 1,000 | $2.98 | $2,980.00 |
Drop-in alternatives for K4A4G085WD-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G085WE-BCRC
✅ Drop-In✓ In Stock
$1.36 / Unit
View Datasheet →K4A4G085WD-BCPB
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →K4A4G085WB-BCRC
✅ Drop-In📋 Reference alternative (not in catalog)
K4A4G085WD
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →MT40A512M8RH-075E:B
✅ Drop-In✓ In Stock
$2.15 / Unit
View Datasheet →K4A4G085WD-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-2400) |
| Supply Voltage | 1.2 V |
| Die Generation | D-die |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Interface | Parallel (DDR4) |
| Bank Groups | Yes (DDR4 architecture) |
| On-Die Termination (ODT) | Yes |
| Refresh | Standard DDR4 refresh (8K/64ms nominal) |
| RoHS Status | Compliant |
| Manufacturers Part Number Full | K4A4G085WD-BCRC |
K4A4G085WD-BCRC 78-ball fbga Pin Configuration Guide
Complete pinout information for K4A4G085WD-BCRC (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G085WD-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G085WD-BCRC is suitable for 6 applications: Industrial Controllers and PLCs, Embedded Computing Modules, Firmware Boot and Data Logging, Network Appliances and Routers, Test and Measurement Instruments, Legacy DDR4 BOM Replacement Sourcing.
Industrial Controllers and PLCs
The K4A4G085WD-BCRC provides 4Gb of DDR4 working memory at DDR4-2400 with 1.2V operation, matching the memory demands of industrial controllers running RTOS firmware, motion-control loops, and data logging. Its 512M x 8 organization fits single-device-per-lane controller buses common in PLC CPU modules, and GlobalSpec explicitly lists industrial controllers as a target use. The DDR4-2400 speed class delivers sufficient bandwidth for control loops and HMI buffering, while standard DDR4 features such as ODT and bank groups simplify controller bring-up. Place the device close to the SoC with fly-by CA routing and solid 1.2V and VTT planes; industrial ambient temperatures require confirming the bin's rated operating range.
Recommended
Embedded Computing Modules
Embedded computing and networking modules use the K4A4G085WD-BCRC as main system DRAM: 4Gb in a single 78-ball FBGA gives compact boards enough memory for Linux-class workloads without a multi-chip DDR4 array. The 1.2V rail integrates cleanly with modern SoC power trees, and the DDR4-2400 rate matches mainstream ARM and x86 embedded SoC memory controllers. Because the x8 FBGA-78 ballout is JEDEC-standard, module designers can dual-source with Micron MT40A512M8RH-075E:B or alternate Samsung die generations (WE, WB) with minimal requalification. Design the module with length-matched byte lanes and per-device ZQ resistors; module-level thermal spreading under the FBGA keeps DRAM refresh margins stable at sustained bandwidth.
Recommended
Firmware Boot and Data Logging
For embedded logging, firmware boot buffering, and runtime data capture, the K4A4G085WD-BCRC supplies 512MB of fast volatile buffer memory that pairs with serial NAND or eMMC boot storage. Samsung's own K9-series NAND devices (for example K9DUGY8S7M) complement the DDR4: code boots from flash into DRAM, then logs stream through the 4Gb buffer at DDR4-2400 rates. The x8 organization maps directly onto 8-bit logging buses and simplifies ECC layout. Because logging systems run continuously, monitor DRAM temperature and leverage the standard DDR4 refresh scheme (8K refresh nominal over 64ms); the 1.2V core keeps continuous-operation power low compared with DDR3 alternatives at equal density.
Recommended
Network Appliances and Routers
Networking equipment such as routers, switches, and gateways relies on DRAM for packet buffering, routing tables, and management-plane software. The K4A4G085WD-BCRC's DDR4-2400 interface provides the sustained bandwidth needed for line-rate packet forwarding in mid-range appliances, while 4Gb capacity comfortably hosts Linux-based management stacks. The 78-ball FBGA footprint allows two devices to populate a 64-bit plus ECC controller bus, a common topology in network silicon reference designs. Because networking hardware runs 24/7 in controlled cabinets, the 1.2V rail and low-refresh overhead translate to meaningful fleet-level energy savings versus DDR3 designs; verify CAS latency settings against the BCRC timing table for worst-case temperature.
Recommended
Test and Measurement Instruments
Oscilloscope, data-acquisition, and signal-analyzer front ends capture high-rate sample streams that must be buffered into DRAM before processing. The K4A4G085WD-BCRC's DDR4-2400 byte-wide interface sustains the streaming throughput needed between ADC/FPGA capture logic and processor memory, and 4Gb per device allows deep capture memory when ganged across a 64-bit controller bus. Samsung D-die DDR4 in the JEDEC-standard FBGA-78 footprint lets instrument designers pre-qualify a layout once and then source from Samsung WB/WD/WE generations or Micron equivalents. Layout priority: keep DQS-to-DQ trace skew within DDR4 spec, use solid reference planes under the byte lanes, and provision the 1.2V rail with low-ESR bulk plus high-frequency ceramic decoupling.
Recommended
Legacy DDR4 BOM Replacement Sourcing
Many fielded products were built around 4Gb x8 DDR4 and now face end-of-life sourcing gaps. The K4A4G085WD-BCRC, and its drop-in peers K4A4G085WE-BCRC and K4A4G085WB-BCRC, let buyers re-populate legacy BOM lines without PCB changes because all use the JEDEC-standard 78-ball x8 DDR4 footprint. Replacement sourcing teams should compare speed-bin suffixes (BCRC, BCTD, BCWE), confirm the memory controller timing table covers the substitute bin, and prefer the newest die generation (E-die) for longest future availability. Distributors such as Censtry and Weyland stock the BCRC specifically for replacement demand, with 180-day warranties and test reports available on request for quality assurance.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G085WD-BCRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G085WE-BCRC | K4A4G085WD-BCPB | K4A4G085WB-BCRC | MT40A512M8RH-075E:B |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same footprint, package option code differs | 78-ball FBGA - same | 78-ball FBGA (JEDEC x8) - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Speed Class | DDR4-2400 (BCRC) | DDR4-2400 (BCRC) | [DATA_NEEDED] - verify suffix speed bin | DDR4-2400 (BCRC) | DDR4-2400 class (075E bin) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | D-die | E-die (newer) | D-die | B-die (older) | Micron 8Gb-class monolithic die |
| Reference Price (qty 1, as of 2026-09-04) | $4.26 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | Active (newest die, longest life expected) | Active | Active (older die, shorter expected life) | Active |
Key Differentiators
- Current D-die generation with long sourcing runway (vs K4A4G085WB-BCRC)
- Same speed code, newer die option exists (vs K4A4G085WE-BCRC)
- JEDEC-standard x8 footprint enables true cross-brand drop-in (vs MT40A512M8RH-075E:B)
Design Notes
DDR4-2400 fly-by topology is mandatory for CK/CA/address signals: route them in a daisy chain from controller through each DRAM with 40-ohm controlled impedance and VTT termination (0.6V) at the chain end. DQ/DQS/DM byte lanes must be length-matched within the DDR4 spec skew budget, referencing a continuous ground plane. With the FBGA-78 package, keep the ZQ calibration resistor (240 ohm 1%) within a few millimeters of the ZQ ball with no stubs.
Budget three rails: VDD/VDDQ at 1.2V, VPP at 2.5V, and VTT at 0.6V (VDDQ/2) for termination. Estimated: at DDR4-2400 a single 4Gb x8 device typically draws a few hundred milliamps peak from the 1.2V rail - size the VTT source/sink LDO for termination current that can be bidirectional and substantial in write bursts. Use bulk capacitance near each device plus per-ball high-frequency ceramics; VTT must track VDDQ/2 within tolerance under transient load.
Do not mix die generations (B/WD/E) on the same byte-lane bus without requalifying the timing table - tRFC and output slew differ between Samsung generations, and controller training must be rerun. Also verify the speed suffix when purchasing: BCRC, BCTD, and BCWE denote different speed bins even within the same K4A4G085WD family; ordering the wrong bin can cause marginal timing at 2400 MT/s. Finally, confirm the E-die substitution (K4A4G085WE-BCRC) supports your controller's DDR4 initialization sequence before mass production.
Compliance Information
RoHS compliance per standard Samsung DDR4 production policy; formal REACH/halogen-free/conflict-minerals declarations should be requested from Samsung environmental documentation for the specific date code.
