Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

MPN: K3LK4L40DM-BGCT ✓ Active
In Stock Ships in 1-3 business days
[DATA_NEEDED: Supply Voltage] Vdss BGA (per -BGC ordering-code suffix) Package DRAM (SDRAM component) Memory
From $40.5 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $50.6 $50.60
10 $48 $480.00
100 $45.5 $4,550.00
500 $43 $21,500.00
1,000 $40.5 $40,500.00
ℹ️ All prices are in USD

Drop-in alternatives for K3LK4L40DM-BGCT — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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K3LK4L40DM-BGCT Maximum Ratings & Electrical Characteristics

Memory Type DRAM (SDRAM component)
Manufacturer Samsung Electronics
Package Type BGA (per -BGC ordering-code suffix)
Mounting Type Surface Mount

K3LK4L40DM-BGCT [data_needed: ball count] Pin Configuration Guide

Complete pinout information for K3LK4L40DM-BGCT ([data_needed: ball count] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

[data_needed: ball count] package pinout diagram for K3LK4L40DM-BGCT

No detailed pinout data available for K3LK4L40DM-BGCT.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K3LK4L40DM-BGCT Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K3LK4L40DM-BGCT is suitable for 6 applications: Mobile Device Main Memory, Consumer Electronics, Embedded Systems, Networking and Communications Equipment, Memory Module and Stacked Assembly, Smart Home and IoT Hubs.

📱

Mobile Device Main Memory

Samsung K3-series DRAM components like the K3LK4L40DM-BGCT are widely documented as main system memory in smartphones and tablets, paired with Qualcomm, MediaTek, or Samsung Exynos application processors. The BGA package supports the fine-pitch, low-profile mounting required inside thin mobile form factors, and Samsung's mobile-class DRAM process delivers the bandwidth-per-watt that battery-powered devices demand. In this role the DRAM serves as the volatile working memory for the OS and applications; its data rate directly determines multitasking responsiveness. Layout should follow the application processor vendor's memory routing guidelines with length-matched data groups. Third-party repair documentation (inmobile.info) confirms this part family's use across multiple phone models, underlining its role in the mobile supply chain.

📺

Consumer Electronics

Set-top boxes, smart TVs, and gaming peripherals require cost-effective DRAM for frame buffers and application workloads. The K3LK4L40DM-BGCT's BGA surface-mount construction suits high-volume reflow assembly typical of consumer manufacturing, and Samsung's green (RoHS-coded) packaging satisfies global environmental regulations for consumer goods. In set-top box designs the DRAM typically partners an SoC such as an Amlogic or MediaTek platform, where its bandwidth supports 4K video decode buffering. Because consumer products are price-sensitive, the spot-market availability documented by distributors like Win Source and ICAllIn makes this part attractive for mid-volume builds. Verify operating temperature against the enclosure's thermal profile, since sealed set-top enclosures can push ambient well above 70C.

🏭

Embedded Systems

Industrial embedded controllers, HMI panels, and networking equipment use DRAM components of this class as main memory alongside MCUs or application processors. The K3LK4L40DM-BGCT's BGA footprint supports the compact, conformal-coatable assemblies common in industrial hardware, and its Samsung DRAM lineage means mature controller support and errata documentation. Designers should confirm the commercial temperature coding implied by the -CT suffix against the industrial enclosure environment; extended-temperature Samsung variants may be preferable for harsh environments. Memory controller timing files (CAS latency, refresh interval) must match the datasheet speed bin. On XAIPART, companion TI Sitara-class processors and power management parts are available to complete the embedded memory subsystem design.

🌐

Networking and Communications Equipment

Routers, switches, and gateway platforms demand high-bandwidth DRAM for packet buffering and control-plane software. A Samsung DRAM component such as the K3LK4L40DM-BGCT provides the random-access performance that network processors and communication SoCs require, with BGA packaging enabling dense multi-chip memory arrays on limited board area. At gigabit-class line rates, memory bandwidth often gates throughput, so the datasheet data rate should be budgeted against the packet-processing workload. Signal integrity at high data rates demands controlled-impedance routing and length-matched trace groups per Samsung's layout guidelines. XAIPART stocks companion networking silicon including TI interface and USB hub devices for completing communications platform designs.

🖥️

Memory Module and Stacked Assembly

DRAM components like the K3LK4L40DM-BGCT serve as the base die for module-level and stacked memory assemblies, including custom memory-down PCBA designs and SODIMM-style solutions. Samsung's structured K3/K4 naming and JEDEC-aligned ballouts simplify multi-vendor qualification when paired with the drop-in alternatives listed on this page. In memory-down designs, the component is placed directly on the host PCB rather than on a removable module, reducing height and cost; this requires committing to the exact ball count and pinout at PCB layout time, making early datasheet verification essential. Thermal design matters: multiple DRAM components clustered together raise local ambient, so copper pours under the BGA are recommended for heat spreading.

🧩

Smart Home and IoT Hubs

IoT gateways, smart speakers, and camera hubs require DRAM capacity for local buffering, edge inference workloads, and multitasking firmware. The K3LK4L40DM-BGCT in BGA packaging fits the space-constrained, cost-optimized architectures typical of smart home hardware, and Samsung's green packaging supports the environmental certifications these consumer-facing products require. The DRAM typically pairs with an SoC running Linux, where 1-4 Gb class densities balance cost against OTA-update headroom. Because these devices run continuously, verify refresh-induced standby power against the product's energy-star targets. XAIPART's sensor and wireless module catalog provides companion components for complete IoT hub reference designs.

What is the K3LK4L40DM-BGCT?
The K3LK4L40DM-BGCT is a DRAM memory component manufactured by Samsung Electronics. Multiple distributor listings, including GlobalSpec's datasheet index, classify it in the DRAM category, and it is used in mobile devices, consumer electronics, and embedded systems. The -BGCT ordering suffix indicates a BGA (ball grid array) package with Samsung's green/lead-free commercial temperature coding. For exact density, data rate, and voltage parameters, consult the Samsung datasheet for this ordering code.
What are the key specifications of K3LK4L40DM-BGCT that engineers should know?
Key verifiable facts: it is a Samsung DRAM in a BGA package, categorized under DRAM by GlobalSpec and Win Source, with a spot-market price reference of about $50.60 per unit as of 2026-09-04. Samsung's -G suffix convention indicates lead-free/RoHS green packaging. Density, bus width, data rate, and CAS latency are not published in the distributor snippets gathered here, so engineers must confirm these values against the official Samsung datasheet before design-in.
Is K3LK4L40DM-BGCT a NAND flash or DRAM chip?
It is a DRAM device, not NAND flash. Although one third-party listing (wolfchip.com) loosely describes it as a NAND flash memory device, the GlobalSpec datasheet index explicitly lists the category as DRAM, and Samsung's K3/K4 part-number prefix convention denotes DRAM SDRAM products. This kind of conflicting categorization is common on aggregator sites; the Samsung datasheet is the authoritative reference. Treat the part as a volatile DRAM component requiring a memory controller with refresh support.
What is the price of K3LK4L40DM-BGCT?
The published spot-market reference price for K3LK4L40DM-BGCT is approximately $50.5977 per unit for single-piece quantities, as listed by NY-Components and as of 2026-09-04. Because DRAM pricing fluctuates with market conditions, most distributors (Win Source, ICAllIn, AIChipLink) provide this part on an RFQ (request-for-quote) basis where the final price depends on quantity, date code, and destination. Contact XAIPART for a volume quote.
Where can I buy K3LK4L40DM-BGCT online?
K3LK4L40DM-BGCT is available through multiple online distributors including Win Source, ICAllIn, AIChipLink, YIC Electronics, and NY-Components, most operating on an RFQ or quote basis rather than fixed-price catalog sales. XAIPART offers this Samsung DRAM component with quote-based ordering; submit an RFQ to receive current stock status, lead time, and volume pricing. Always verify date codes and authenticity when sourcing DRAM from spot-market channels.
Is K3LK4L40DM-BGCT in stock, and what is the lead time?
Stock status for K3LK4L40DM-BGCT varies by distributor and is not published as a live count in the data gathered; most channels (Win Source, ICAllIn, AIChipLink) list it on an RFQ basis, which typically implies broker or limited inventory rather than deep catalog stock. As of 2026-09-04, expect quote-dependent availability. For high-volume designs, Samsung original fab-direct allocation through franchised distribution is the most reliable supply path.
What is the difference between K3LK4L40DM-BGCT and K3KL3L30CM-BGCT?
Both are Samsung K3-series DRAM components in BGA packages, but the ordering codes indicate different density/speed configurations: the L40 code of this part versus the L30 code of K3KL3L30CM-BGCT reflects a different grade in Samsung's coding scheme. Because the two share Samsung's DRAM package family, they can be near drop-in options at board level, but you must confirm identical ball count, organization, and speed grade in the respective datasheets before substituting one for the other in production.
What is the best Micron equivalent for K3LK4L40DM-BGCT?
Micron is the leading cross-brand source for Samsung DRAM equivalents. Within the Micron DDR-class component catalog, parts such as the MT40A series appear on comparable footprints, and Micron's MT40A512M8RH-075E:B and MT40A256M16GE-075E:B (both DDR4 components in BGA packages) are the closest catalogued cross-brand candidates referenced here. However, drop-in substitution requires matching density, organization (x4/x8/x16), ball count, and JEDEC timing; always perform a pin-map and firmware timing comparison against both datasheets before qualification.
Can K3KL3L30CM-BGCT replace K3LK4L40DM-BGCT?
It can potentially replace it, with qualification required. K3KL3L30CM-BGCT is a same-brand Samsung DRAM component from the same K3 family in a BGA package, so the physical footprint is likely compatible. The key risk is the L30 versus L40 ordering-code difference, which may encode a different speed grade or density. Verify that the substitute matches your memory controller's supported speed bin and the board's power design before swapping; if identical, it functions as a same-family drop-in alternative.
Where can I download the K3LK4L40DM-BGCT datasheet PDF?
A K3LK4L40DM-BGCT datasheet PDF reference is indexed by GlobalSpec at datasheets.globalspec.com under Samsung Electronics, and distributor pages such as Win Source and YIC Electronics also link datasheet downloads. For the most current and complete revision, request the datasheet directly through Samsung Semiconductor's official product documentation channels or via your distributor. Avoid using aggregator-hosted copies for production design, as they may be superseded revisions.
What package does K3LK4L40DM-BGCT use?
K3LK4L40DM-BGCT is supplied in a BGA (ball grid array) package, indicated by the -BGC portion of the Samsung ordering-code suffix. The exact ball count and body dimensions are not stated in the distributor data collected here and must be confirmed in the Samsung datasheet. Samsung DRAM components of this class typically use fine-pitch lead-free BGA balls (the G in BGC denoting RoHS green plating) intended for surface-mount reflow assembly.
What should I consider when designing a PCB layout for this DRAM?
Prioritize signal integrity and power integrity. Route address/command and data buses as length-matched groups following Samsung's application-note topology (fly-by or daisy-chain per the generation), use controlled-impedance traces (typically 50 ohm single-ended), and decouple VDD/VDDQ with a dense array of ceramic capacitors at each ball cluster. Keep the DRAM close to the memory controller, respect the datasheet's max trace length and via count limits, and follow the JEDEC-recommended BGA land pattern for reliable reflow.
Does K3LK4L40DM-BGCT comply with RoHS?
Based on Samsung's ordering-code convention, the G in the -BGCT suffix denotes a green (halogen-free) and lead-free package, which corresponds to RoHS-compliant construction. However, the distributor snippets gathered here do not include an explicit RoHS certificate, so formal compliance status should be confirmed from Samsung's product compliance documentation or the datasheet before shipping into regulated markets. XAIPART lists this parameter as requiring datasheet confirmation rather than asserting certified status.
Is K3LK4L40DM-BGCT the same as K3LK4L40DM-BGCT in phone models?
Third-party sources such as inmobile.info document that the K3LK4L40DM family of Samsung DRAM ICs is used in smartphone models, where it functions as main system memory paired with an application processor. That said, phone-level compatibility is determined by the device OEM's memory controller configuration, not by the chip alone. For repair or refurbishment use, match the exact ordering code, density, and speed grade of the original component to avoid boot failures.
When should I choose K3LK4L40DM-BGCT over an alternative DRAM?
Choose K3LK4L40DM-BGCT when your design already targets Samsung's DRAM platform, your memory controller characterization and timing files are tuned to this exact ordering code, and supply continuity from Samsung distribution is assured. Consider a same-family alternative such as K3KL3L30CM-BGCT when this code faces shortage or pricing pressure, provided density and speed match. Choose a Micron cross-brand equivalent only when full pin-map and timing re-qualification is budgeted. For consumer-volume designs, cost per gigabit and second-source availability usually outweigh single-part loyalty.

Engineering reference data for K3LK4L40DM-BGCT — comparison, design guidance, and compliance information.

Selection Guide

Choose K3LK4L40DM-BGCT when your platform is designed around Samsung's DRAM platform and your memory controller timing files match this exact ordering code - existing characterization is the strongest reason to stay. Choose same-family K3KL3L30CM-BGCT when this code faces shortage, after confirming the L30 speed grade matches your controller's supported bin. Choose Samsung K4A4G085WD-BCRC or K4A4G165WF-BCTD for new DDR4-generation designs where mature controller ecosystem support matters more than continuity with this code. Choose Micron MT40A512M8RH-075E:B or MT40A256M16GE-075E:B as cross-brand second sources when dual-vendor supply is a procurement requirement; budget for full pin-map and timing re-qualification. Honest trade-off: Samsung offers the deepest mobile/consumer ecosystem documentation, while Micron often provides superior long-term availability commitments for industrial customers. Spot-market pricing (~$50.60 as of 2026-09-04) suggests verifying volume pricing via RFQ before committing.

Comparison with Alternatives

Parameter This Product K3KL3L30CM-BGCT K4A4G085WD-BCRC MT40A512M8RH-075E:B MT40A256M16GE-075E:B
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology Micron Technology
Package BGA BGA (same family) BGA (FBGA DDR4 class) BGA (FBGA DDR4 class) BGA (FBGA DDR4 class)
Memory Class DRAM (SDRAM component) DRAM DRAM (DDR4) DRAM (DDR4) DRAM (DDR4)
Density [DATA_NEEDED] [DATA_NEEDED] 4 Gb 4 Gb (512Mx8) 4 Gb (256Mx16)
Organization [DATA_NEEDED] [DATA_NEEDED] x8 class 512M x8 256M x16
Speed Grade [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 1875 Mbps (0.75) 1875 Mbps (0.75)
Approx. Unit Price (qty 1) $50.60 (spot reference, as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Lead-Free / Green Package Yes (per -G ordering-code convention) Yes (per -G convention) Yes (per -G convention) Yes (E:B suffix, lead-free) Yes (E:B suffix, lead-free)

Key Differentiators

  • Samsung fab-direct supply chain with same-family second sources (vs K3KL3L30CM-BGCT)
  • Cross-brand JEDEC-standard DDR4 interchange path (vs MT40A512M8RH-075E:B)
  • Green/RoHS-coded packaging (vs K4A4G165WF-BCTD)

Design Notes

At DRAM data rates, route address/command and data buses as length-matched groups with controlled impedance (typically 50 ohm single-ended, 100 ohm differential where applicable). Follow Samsung's recommended topology (fly-by or daisy-chain per the memory generation) and keep trace stubs minimal. Read ODT (on-die termination) settings must be tuned against your board's impedance profile; improper ODT is the most common cause of marginal eye diagrams. Verify timing with the datasheet's AC timing table for the exact speed bin of this ordering code.

Provide separate, clean VDD and VDDQ rails with dense local decoupling: place multiple 0.1uF and 0.01uF ceramic capacitors at each BGA ball cluster plus bulk capacitance per rail. Estimated: for a 4 Gb class DDR device, peak VDDQ transient currents can reach several hundred milliamps during simultaneous write bursts, so a buck regulator with fast transient response (e.g., TI TPS54218 class) is appropriate for the VDDQ rail. Confirm exact rail voltages and tolerances from the Samsung datasheet, since the memory generation determines whether 1.2V, 1.35V, or 1.5V rails apply.

Do not substitute DRAM ordering codes without verifying density, organization, speed grade, and ball count - the L30 versus L40 difference between K3KL3L30CM-BGCT and this part may encode a different speed bin, causing intermittent boot failures only under load or temperature. Also avoid sourcing from unverified spot-market brokers without date-code and authenticity checks; DRAM is a frequent counterfeit target. Finally, confirm the commercial temperature rating of the -CT suffix against your enclosure's worst-case internal ambient.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Samsung's -G ordering-code convention denotes green (lead-free/halogen-free) packaging, but explicit RoHS/REACH certification is not present in the provided distributor data and must be confirmed from Samsung's official compliance documentation.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K3LK4L40DM-BGCT K3KL3L30CM-BGCT K4A4G085WD-BCRC MT40A512M8RH-075E:B MT40A256M16GE-075E:B DRAM SDRAM DDR SDRAM volatile memory semiconductor memory BGA package ball grid array RoHS lead-free green package mobile device memory embedded systems memory memory controller CAS latency refresh interval
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