K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung
MPN: K9JUGY8J5C-CCK0 ✓ نشطK9JUGY8J5C-CCK0 نظرة عامة
NAND flash is a non-volatile memory technology that retains data without power and sits at the heart of the storage hierarchy: page/program-erase operations -> NAND flash die -> NAND package -> SSD/eMMC/UFS module -> system storage subsystem. Unlike DRAM, NAND requires block-based erase and sequential page programming, managed by an external or integrated flash controller.
Key characteristics of this device include its 1Tb capacity per package, triple-level-cell (TLC) density, and Samsung V6 (128-layer) vertical NAND process, which improves bit density and cost-per-GB versus planar and earlier V-NAND generations. The CCK0 speed-grade suffix indicates the device's read latency and interface timing class; controllers must be configured to the correct ONFI/toggle-mode timing for reliable operation.
Technically, the die uses Samsung's charge-trap-flashing vertical channel architecture, which reduces cell-to-cell interference compared to planar floating-gate cells at equivalent scaling. TLC devices require strong ECC (LDPC), die-level interleaving, and wear-leveling firmware to achieve rated endurance over the specified program/erase cycle count.
Typical applications include client and enterprise SSDs, eMMC/UFS embedded storage, USB drives, memory cards, and industrial storage modules where high capacity per footprint is the primary requirement.
Design consideration: verify the exact package footprint, interface mode, and operating temperature range against the official Samsung datasheet before layout, as Samsung NAND part-number suffixes denote package and speed variants that are not always drop-in interchangeable.
This page synthesizes Samsung family cross-references, drop-in alternatives, and selection guidance not consolidated on distributor pages.
بدائل مباشرة لـ K9JUGY8J5C-CCK0 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K9JUGY8J5C-CCK0 (نفس عامل الشكل والبصمة) — يختلف في Memory Type, Cell Type, Technology, Density, RoHS Status.
K9JUGY8J5C-BCK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K9IUGY8J7B-CCK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K9IUGY8J7B-BCK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K9HUGY8J5B-CCK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K9HUGY8J5B-BCK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K9JUGY8J5C-CCK0 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Samsung Electronics |
| نوع الذاكرة | NAND Flash - V-NAND (TLC) |
| Density | 1 Tb (128 GB) |
| Cell Type | TLC (Triple-Level Cell) |
| Technology Generation | V6 (6th-gen V-NAND, 128-layer) |
| نوع التركيب | Surface Mount |
دليل تكوين أطراف K9JUGY8J5C-CCK0 standard
تكوين الأطراف لـ K9JUGY8J5C-CCK0 (حزمة standard). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ K9JUGY8J5C-CCK0.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
K9JUGY8J5C-CCK0 مناسب لـ 6 التطبيقs: Client SSD Storage, Enterprise Storage, Embedded eMMC/UFS Storage, USB Flash Drives, Memory Cards, Industrial Storage Modules.
Client SSD Storage
The K9JUGY8J5C-CCK0's 1Tb (128 GB) TLC capacity per package makes it a core building block for client NVMe and SATA SSDs, where 8-16 packages yield 1-2 TB arrays in a compact footprint. Its V6 128-layer V-NAND process lowers power per bit versus previous generations, improving battery life in laptops. The SSD controller schedules interleaved die operations and applies LDPC ECC to meet TLC endurance; the CCK0 speed grade defines read latency used in firmware timing tables.
موصى به
Enterprise Storage
In enterprise SSDs and all-flash arrays, the K9JUGY8J5C-CCK0 provides high density per package, reducing PCB area and BOM count for multi-terabyte drives. V-NAND V6's charge-trap architecture improves retention and read-disturb behavior compared with planar TLC, important for data-center duty cycles. Firmware-level wear leveling, data scattering, and end-to-end CRC are mandatory; designers should derate endurance based on workload write amplification documented by the controller vendor.
موصى به
Embedded eMMC/UFS Storage
Smartphones, tablets, and IoT gateways embed NAND directly into eMMC or UFS packages. The K9JUGY8J5C-CCK0's 1Tb TLC die is the class of silicon used in such stacked devices, where capacity per z-height matters. Its low operating voltage class suits mobile power budgets, and V6 process maturity ensures supply continuity across product lifecycles. Integrators using bare NAND must supply their own FTL (flash translation layer) with power-loss protection.
موصى به
USB Flash Drives
High-capacity USB drives use 1-2 packages of 1Tb TLC NAND such as the K9JUGY8J5C-CCK0 behind a single-chip USB controller. The V6 generation's improved density lets a 128 GB drive use one package, cutting cost and thickness. Because USB controllers typically use simplified FTLs, sustained write speed after the SLC cache fills reflects raw TLC program performance of the CCK0 grade - a key benchmark for product marketing claims.
موصى به
Memory Cards
SD and microSD cards at 128 GB and above commonly employ a single 1Tb TLC NAND package like the K9JUGY8J5C-CCK0. The V6 128-layer process supports the card-controller interface timing while fitting within the extremely thin card form factor. Card controllers implement dynamic SLC caching and ECC sized for TLC raw bit error rates; the part's read-latency class influences sustained 4K random-read performance cited in V30/V60/UHS speed-class certification.
موصى به
Industrial Storage Modules
Industrial PCs, gateways, and logging systems use the K9JUGY8J5C-CCK0 on CFast, SATA M.2, or raw-NAND boards where wide-temperature qualification matters. Designers must confirm the operating temperature range of the CCK0 grade against the datasheet; Samsung also offers industrial-grade (IG) screened variants for extended range and fixed-BOM longevity. Under-sizing ECC or omitting power-loss protection are the most common field-failure causes in such deployments.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K9JUGY8J5C-CCK0 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K9JUGY8J5C-BCK0 | K9IUGY8J7B-CCK0 | K9HUGY8J5B-CCK0 |
|---|---|---|---|---|
| Package | Fine-pitch BGA (per Samsung V-NAND family) | Fine-pitch BGA - same | Fine-pitch BGA - verify ball map | Fine-pitch BGA - verify ball map |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC | TLC | TLC | TLC |
| NAND Generation | V6 (128-layer V-NAND) | V6 (128-layer V-NAND) | V6 (128-layer V-NAND) | V5-generation V-NAND |
| Grade Suffix | CCK0 | BCK0 | CCK0 | CCK0 |
| Lifecycle Status | Active | Active | Active | Active (prior generation) |
أبرز الفروقات
- Newest V6 generation in family (مقابلK9HUGY8J5B-CCK0)
- Same-die grade option for qualification reuse (مقابلK9JUGY8J5C-BCK0)
- Largest density per package among listed siblings (مقابلK9IUGY8J7B-CCK0)
ملاحظات التصميم
Never assume grade-suffix interchangeability without timing verification. Samsung suffixes such as BCK0 vs CCK0 encode speed/temperature classes; a controller timing table tuned for one grade may violate tR or tPROG limits on another. Validate against the official Samsung datasheet and re-run controller readiness tests (read-retry, calibrate) after any NAND swap, even same-die ones.
Fine-pitch BGA NAND at toggle-mode speeds requires length-matched traces on the DQ/RE/WE bus and solid ground reference. Keep stubs under 2 mm, series-terminate the clock/ strobe lines, and reference the impedance target (typically 50 ohm single-ended) on all flash channels. For multi-die interleaving, group each channel's routing cleanly to avoid crosstalk between independent die buses.
NAND VCC and VCCQ rails see high transient currents during program operations (page programming across multiple die simultaneously). Provide bulk capacitance near each package (e.g., 10 uF per rail) plus 0.1 uF ceramic at ball exits, and size the PMIC for worst-case concurrent programming rather than average current. Estimated: with several die programming concurrently, peak rail current can exceed 3x idle current, causing brown-out resets if decoupling is under-designed.
Confirm the exact BGA ball count, pitch, and A1 ball location from the official Samsung package outline drawing before routing; this page's pinout is intentionally null because Samsung restricts the full ball map to datasheet/NDA channels. Use via-in-pad with filled vias or dog-bone fanout per IPC practice for the fine pitch, and define keep-outs under the package for rework access.
معلومات الامتثال
Compliance declarations not present in provided verified data. Samsung publishes per-part environmental certificates on its semiconductor website; obtain RoHS/REACH documents for this specific grade before release.
