K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung
MPN: K9JUGY8J5C-BCK0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9JUGY8J5C-BCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9IUGY8J7B-CCK0
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View Datasheet →K9IUGY8J7B-BCK0
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View Datasheet →K9HUGY8J5B-CCK0
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$9.6 / Unit
View Datasheet →K9HUGY8J5B-BCK0
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View Datasheet →K9JUGY8J5C-BCK0 Maximum Ratings & Electrical Characteristics
| Memory Type | NAND Flash (V-NAND TLC) |
| Density | 1 Tb |
| Cell Type | Triple-Level Cell (TLC) |
| Technology | Samsung V-NAND (3D) |
| RoHS Status | Compliant |
| Mounting Type | Surface Mount |
K9JUGY8J5C-BCK0 [data_needed: fbga ball count / package code] Pin Configuration Guide
Complete pinout information for K9JUGY8J5C-BCK0 ([data_needed: fbga ball count / package code] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: fbga ball count / package code] package pinout diagram for K9JUGY8J5C-BCK0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9JUGY8J5C-BCK0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9JUGY8J5C-BCK0 is suitable for 6 applications: Client SSD Storage, Embedded Storage (eMMC/UFS-class designs), Surveillance and Video Recording Storage, USB Flash Drives and Memory Cards, Set-Top Box and Smart Home Hub Storage, Industrial and IoT Data Loggers.
Client SSD Storage
The K9JUGY8J5C-BCK0's 1Tb TLC capacity makes it a natural building block for client PCIe and SATA SSDs, where 16 packages yield 2 TB raw capacity on a compact PCB. Samsung V-NAND's vertical cell structure reduces cell-to-cell interference, supporting the tight read-voltage margins TLC demands. In an SSD, the NAND connects to the controller over Toggle DDR or asynchronous interfaces with LDPC ECC offload. Compared to lower-density dies, the 1Tb device reduces package count, lowering BOM cost and improving channel interleaving for higher sequential throughput.
Recommended
Embedded Storage (eMMC/UFS-class designs)
High-density TLC NAND such as K9JUGY8J5C-BCK0 underpins embedded storage modules for smart devices, automotive infotainment, and industrial gateways. The 1Tb density allows module makers to reach 64-256 GB in a small stacked footprint, while Samsung V-NAND tolerances support the multi-bit-per-cell operation these modules require. Designers should pair the NAND with a controller providing SLC-cache emulation and LDPC ECC sized to TLC raw BER. The trade-off versus eMMC integrated solutions is flexibility: raw NAND enables custom firmware, capacity tiers, and cost tuning.
Recommended
Surveillance and Video Recording Storage
Continuous video write workloads in surveillance DVR/NVR systems favor high-density TLC NAND like the K9JUGY8J5C-BCK0 because cost per terabyte dominates system economics. A controller with wear-leveling spreads the heavy sequential write load across the 1Tb array, and SLC-cache buffering absorbs burst writes from multiple camera streams. Samsung V-NAND's improved read-disturb behavior helps sustain data integrity under 24/7 operation. Retention and endurance at elevated ambient temperatures should be validated against the datasheet grade selected for the deployment environment.
Recommended
USB Flash Drives and Memory Cards
Consumer removable storage benefits directly from the K9JUGY8J5C-BCK0's 1Tb density: a single die enables 128 GB-class drives with minimal component count, reducing thickness and cost. TLC's high density keeps bill-of-materials cost per gigabyte low, which is essential in the price-sensitive flash-card market. Controller firmware must implement SLC-cache writes to deliver responsive user-level performance and LDPC ECC to meet TLC data-retention requirements. Samsung V-NAND process maturity supports the volume manufacturing model these consumer products demand.
Recommended
Set-Top Box and Smart Home Hub Storage
Set-top boxes and smart home hubs store operating systems, DVR buffers, and application data on TLC NAND, where the K9JUGY8J5C-BCK0's 1Tb die provides headroom for feature-rich firmware and local recording. The device's V-NAND architecture supports the frequent small-block rewrites typical of EPG caching and app updates, provided the controller applies journaling and wear leveling. Power-loss protection strategy (firmware flush and power-fail recovery) is more critical than in client SSDs because these devices are routinely unplugged.
Recommended
Industrial and IoT Data Loggers
Industrial gateways and IoT recorders use high-density TLC NAND for local event and telemetry logging, and the K9JUGY8J5C-BCK0's 1Tb capacity supports long retention windows between uplink opportunities. Designers must verify the operating temperature suffix and derate TLC retention expectations at temperature extremes, adding controller-level periodic data refresh where required. V-NAND's stable cell characteristics aid long-idle retention compared to dense planar TLC. Firmware should include power-fail-safe journaling, as industrial power is unreliable and write interruptions are routine.
Recommended
Recommended Products Summary
Engineering reference data for K9JUGY8J5C-BCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9IUGY8J7B-CCK0 | K9HUGY8J5B-CCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|---|---|
| Package | FBGA (ball count per Samsung datasheet) | FBGA (per Samsung datasheet) | FBGA (per Samsung datasheet) | FBGA (per Samsung datasheet) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 1 Tb | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Cell Type | TLC (3 bits/cell) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | V-NAND (3D) | V-NAND (3D) | V-NAND (3D) | V-NAND (3D) |
| Interface Mode | [DATA_NEEDED: async/Toggle DDR mode] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature | [DATA_NEEDED: per suffix] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Price Tier (qty 1) | Quote required | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Latest listed U-generation density per package (vs K9HUGY8J5B-CCK0)
- 1Tb TLC density reduces package count (vs K9IUGY8J7B-CCK0)
- Trade-off: TLC endurance vs MLC/SLC (vs K9HUGY8J5B-BCK0)
Design Notes
Never assume ball-map compatibility between Samsung NAND generations. The K9JUGY8J5C (U-generation), K9IUGY8J7B (I-generation), and K9HUGY8J5B (H-generation) families may share FBGA outline dimensions while differing in ball assignments or supply-ball positions. Before reuse of an existing footprint, overlay the two Samsung datasheet ball maps ball-by-ball and confirm VCC/VCCQ/GND positions are identical. A mismatch discovered post-fabrication requires board respin, not just firmware changes.
Provide independently regulated, sequenced supplies for VCC and VCCQ per the Samsung datasheet power-up requirements, with decoupling of at least 100 nF ceramic per supply ball group plus bulk capacitance sized for program-operation current surges. NAND program and erase operations draw burst currents that can droop an undersized rail and corrupt the in-flight program. Verify peak current figures in the datasheet and estimate rail droop with your regulator's transient response; these droop calculations are design estimates, not datasheet values.
In Toggle DDR mode, route DQ0-DQ7 and DQS as length-matched groups with series termination near the controller; keep traces within the datasheet-specified maximum length for the target interface speed grade. For asynchronous mode at lower speeds, relax matching but retain 22-33 ohm series resistors to control ringing on the open-drain RE/WE control lines. Simulate eye diagrams at the interface VCCQ level before tape-out; SI margins are estimates from layout practice, not guaranteed by the memory datasheet.
TLC NAND requires LDPC ECC with firmware-managed read retry. Do not qualify K9JUGY8J5C-BCK0 on a controller designed for planar MLC with BCH ECC - raw TLC bit error rates exceed BCH correction capability, especially on read-disturb-prone cold data. Confirm the U-generation ID and ONFI-style parameter page are in your controller's supported-device table, and reserve firmware margin for Samsung read-voltage-shift retry tables.
Compliance Information
RoHS compliance consistent with Samsung current-generation V-NAND packaging policy; formal per-suffix material declarations available from the Samsung Semiconductor compliance portal.
