IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
MPN: IS43QR16512B-062AABL ✓ نشطIS43QR16512B-062AABL نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.
Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).
The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.
Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.
When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.
بدائل مباشرة لـ IS43QR16512B-062AABL — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IS43QR16512B-062AABL (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, CAS Latency, Operating Temperature, Interface.
IS43QR16512B-062AABL-TR
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MT40A512M16TB-062E
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$60 / وحدة
عرض ورقة البيانات ←K4A8G165WB-BCWE
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✓ متوفر في المخزون
$6.55 / وحدة
عرض ورقة البيانات ←H5AN8G6NDJR
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C512M16D4A-62BCN
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43QR16512B-062AABL الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| حجم الذاكرة | 8 Gbit |
| التنظيم | 512M x 16 |
| جهد التغذية | 1.2 V |
| معدل البيانات | 3200 MT/s |
| زمن الوصول CAS | 22-22-22 |
| tRCD | 19 ns |
| العلبة | 96-TWBGA (7.5x13.5 mm) |
| درجة حرارة التشغيل | 0°C to +95°C (case) |
| RoHS | Compliant |
| نوع التركيب | Surface Mount |
| عدد الدبابيس | 96 |
| الواجهة | POD (Pseudo Open Drain) |
| Clock Frequency | 1.6 GHz |
| عرض ناقل البيانات | 16 bit |
تكوين أطراف IS43QR16512B-062AABL
| دبوس A1 | VDD — Power supply (1.2V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | VDD — Power supply (1.2V) |
| دبوس E2 | DQS0 — Data strobe 0 |
| دبوس E3 | DQS0# — Data strobe 0 complement |
| دبوس F1 | VSS — Ground |
| دبوس F2 | DM0 — Data mask 0 |
| دبوس F3 | VDDQ — I/O power supply |
| دبوس G1 | A0 — Address input 0 |
| دبوس G2 | A1 — Address input 1 |
| دبوس G3 | A2 — Address input 2 |
| دبوس H1 | A3 — Address input 3 |
| دبوس H2 | A4 — Address input 4 |
| دبوس H3 | A5 — Address input 5 |
| دبوس J1 | A6 — Address input 6 |
| دبوس J2 | A7 — Address input 7 |
| دبوس J3 | A8 — Address input 8 |
| دبوس K1 | A9 — Address input 9 |
| دبوس K2 | A10/AP — Address input 10 / Auto-precharge |
| دبوس K3 | A11 — Address input 11 |
| دبوس L1 | A12 — Address input 12 |
| دبوس L2 | A13 — Address input 13 |
| دبوس L3 | A14 — Address input 14 |
| دبوس M1 | BA0 — Bank address 0 |
| دبوس M2 | BA1 — Bank address 1 |
| دبوس M3 | BA2 — Bank address 2 |
| دبوس N1 | BG0 — Bank group 0 |
| دبوس N2 | BG1 — Bank group 1 |
| دبوس N3 | VDD — Power supply (1.2V) |
| دبوس P1 | CK — Clock input |
| دبوس P2 | CK# — Clock input complement |
| دبوس P3 | CKE — Clock enable |
| دبوس R1 | CS# — Chip select |
| دبوس R2 | ODT — On-die termination |
| دبوس R3 | RAS# — Row address strobe |
| دبوس T1 | CAS# — Column address strobe |
| دبوس T2 | WE# — Write enable |
| دبوس T3 | RESET# — Reset |
| دبوس U1 | VSS — Ground |
| دبوس U2 | VDDQ — I/O power supply |
| دبوس U3 | VSSQ — I/O ground |
التطبيقات النموذجية
IS43QR16512B-062AABL مناسب لـ 6 التطبيقs: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.
High-Performance Servers
The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.
موصى به
Networking Equipment
In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.
موصى به
Data Centers
The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.
موصى به
Industrial Computing
For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.
موصى به
Telecommunications
In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.
موصى به
Automotive Infotainment
The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IS43QR16512B-062AABL — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IS43QR16512B-062AABL-TR | MT40A512M16TB-062E | K4A8G165WB-BCWE | H5AN8G6NDJR | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|
| Package | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-TWBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | ISSI | ISSI | Micron | Samsung | SK Hynix | Alliance Memory |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 | 22-22-22 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C (industrial) |
أبرز الفروقات
- ISSI brand reliability and supply chain security (مقابلMT40A512M16TB-062E)
- Industrial temperature grade option (مقابلMT40A512M16TB-062E)
- Pin-compatible with major brands (مقابلK4A8G165WB-BCWE)
ملاحظات التصميم
For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.
The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.
معلومات الامتثال
RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.
