NT5CC256M16CP-DINA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16CP-DINA ✓ نشطNT5CC256M16CP-DINA نظرة عامة
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, embedded systems, and networking equipment.
Key features include a data rate of 1600 Mbps (DDR3-1600), a CAS latency of 11, and a burst length of 8. The device supports on-die termination (ODT), programmable CAS latency, and auto self-refresh for low-power standby. It also features a temperature-compensated self-refresh (TCSR) mode for industrial temperature ranges.
The NT5CC256M16CP-DINA uses a 70nm process technology, enabling high density and low power. It includes a precision DLL for timing alignment and supports write leveling for improved signal integrity. The device is designed for reliable operation in harsh environments, with an operating temperature range of -40°C to +95°C (industrial) and -40°C to +105°C (automotive).
Typical applications include embedded computing, industrial automation, automotive infotainment, and networking equipment. Its low voltage and high density make it ideal for power-sensitive designs, while its wide temperature range suits automotive and industrial environments.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the address and control signals.
بدائل مباشرة لـ NT5CC256M16CP-DINA — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CC256M16CP-DINA (نفس عامل الشكل والبصمة) — يختلف في Package, Supply Voltage, Data Rate, CAS Latency, Burst Length.
NT5CC256M16DP-DI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16CP-DII
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←K4B4G1646D-BYK0
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16512B-125KBLI
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16CP-DINA الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gb |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35 V (DDR3L), backward compatible to 1.5 V |
| معدل البيانات | 1600 Mbps (DDR3-1600) |
| زمن الوصول CAS | 11 |
| Burst Length | 8 |
| العلبة | TFBGA-96, 9 x 13 mm, 0.8 mm pitch |
| نطاق درجة حرارة التشغيل | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| خالٍ من الهالوجين | Yes |
| Process Technology | 70nm |
| الواجهة | CMOS |
| Access Time | 0.225 ns |
| نوع التركيب | Surface Mount |
تكوين أطراف NT5CC256M16CP-DINA
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
التطبيقات النموذجية
NT5CC256M16CP-DINA مناسب لـ 6 التطبيقs: Embedded Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Medical Devices, Test and Measurement.
Embedded Computing
The NT5CC256M16CP-DINA provides high-density, low-power memory for embedded processors in industrial PCs and single-board computers. Its 1.35V operation reduces power consumption, while the 1600 Mbps data rate supports fast data processing. The wide temperature range ensures reliable operation in harsh environments, making it ideal for embedded systems that require long-term stability.
موصى به
Industrial Automation
In industrial automation, the NT5CC256M16CP-DINA offers reliable memory for PLCs and robotics controllers. Its industrial temperature range (-40°C to +95°C) and high reliability make it suitable for factory floors. The 4Gb density supports complex control algorithms, while the low voltage reduces heat generation in sealed enclosures.
موصى به
Automotive Infotainment
The NT5CC256M16CP-DINA is designed for automotive infotainment systems, with an extended temperature range up to +105°C. Its 4Gb capacity supports navigation, multimedia, and connectivity features. The 1.35V operation is compatible with automotive power rails, and the TFBGA package withstands vibration and thermal cycling.
موصى به
Networking Equipment
For networking equipment like routers and switches, the NT5CC256M16CP-DINA provides high-bandwidth memory for packet buffering and routing tables. The 1600 Mbps data rate ensures low latency, while the low power consumption is critical for energy-efficient network devices. The industrial temperature range supports outdoor and telecom environments.
موصى به
Medical Devices
In medical devices, the NT5CC256M16CP-DINA offers reliable memory for imaging and monitoring equipment. Its high density supports large data buffers, and the low voltage reduces power consumption in portable devices. The wide temperature range ensures operation in clinical environments, and RoHS compliance meets medical regulations.
موصى به
Test and Measurement
The NT5CC256M16CP-DINA is used in test and measurement instruments for high-speed data acquisition. Its 1600 Mbps data rate enables fast sampling, while the 4Gb capacity stores large waveforms. The industrial temperature range supports benchtop and field instruments, and the TFBGA package offers compact integration.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CC256M16CP-DINA — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CC256M16DP-DI | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11 | 11 | 11 | 11 |
| Operating Temperature | -40°C to +105°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
أبرز الفروقات
- Wide temperature range (مقابلMT41K256M16HA-125)
- Low voltage operation (مقابلK4B4G1646D-BYK0)
- Same-brand availability (مقابلIS43TR16512B-125KBLI)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DDR3L signals with controlled impedance (typically 50 ohms single-ended, 100 ohms differential) to ensure signal integrity at 1600 Mbps.
The NT5CC256M16CP-DINA operates up to +105°C in automotive applications. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal characteristics and derating guidelines.
Follow the layout guidelines in the Nanya datasheet for DDR3L routing. Keep address/control signals matched in length to data signals, and use on-die termination (ODT) settings to reduce reflections. Maintain proper spacing between differential pairs and avoid vias on high-speed signals where possible.
معلومات الامتثال
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory components.
