NT5CC256M16CP-DINA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN： NT5CC256M16CP-DINA ✓ 啟用中NT5CC256M16CP-DINA 概覽
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, embedded systems, and networking equipment.
Key features include a data rate of 1600 Mbps (DDR3-1600), a CAS latency of 11, and a burst length of 8. The device supports on-die termination (ODT), programmable CAS latency, and auto self-refresh for low-power standby. It also features a temperature-compensated self-refresh (TCSR) mode for industrial temperature ranges.
The NT5CC256M16CP-DINA uses a 70nm process technology, enabling high density and low power. It includes a precision DLL for timing alignment and supports write leveling for improved signal integrity. The device is designed for reliable operation in harsh environments, with an operating temperature range of -40°C to +95°C (industrial) and -40°C to +105°C (automotive).
Typical applications include embedded computing, industrial automation, automotive infotainment, and networking equipment. Its low voltage and high density make it ideal for power-sensitive designs, while its wide temperature range suits automotive and industrial environments.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the address and control signals.
直接替換替代品，適用於 NT5CC256M16CP-DINA — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16CP-DINA （相同外形與佔位） — 差異在於 Package, Supply Voltage, Data Rate, CAS Latency, Burst Length.
NT5CC256M16DP-DI
✅ 直接替換聯絡詢價
查看資料表 →NT5CC256M16CP-DII
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →K4B4G1646D-BYK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →IS43TR16512B-125KBLI
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NT5CC256M16CP-DINA 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V (DDR3L), backward compatible to 1.5 V |
| 資料速率 | 1600 Mbps (DDR3-1600) |
| CAS 延遲 | 11 |
| Burst Length | 8 |
| 封裝 | TFBGA-96, 9 x 13 mm, 0.8 mm pitch |
| 工作溫度範圍 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| 無鹵素 | Yes |
| Process Technology | 70nm |
| 介面 | CMOS |
| Access Time | 0.225 ns |
| 安裝類型 | Surface Mount |
NT5CC256M16CP-DINA 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
典型應用
NT5CC256M16CP-DINA 適用於 6 應用s: Embedded Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Medical Devices, Test and Measurement.
Embedded Computing
The NT5CC256M16CP-DINA provides high-density, low-power memory for embedded processors in industrial PCs and single-board computers. Its 1.35V operation reduces power consumption, while the 1600 Mbps data rate supports fast data processing. The wide temperature range ensures reliable operation in harsh environments, making it ideal for embedded systems that require long-term stability.
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Industrial Automation
In industrial automation, the NT5CC256M16CP-DINA offers reliable memory for PLCs and robotics controllers. Its industrial temperature range (-40°C to +95°C) and high reliability make it suitable for factory floors. The 4Gb density supports complex control algorithms, while the low voltage reduces heat generation in sealed enclosures.
推薦
Automotive Infotainment
The NT5CC256M16CP-DINA is designed for automotive infotainment systems, with an extended temperature range up to +105°C. Its 4Gb capacity supports navigation, multimedia, and connectivity features. The 1.35V operation is compatible with automotive power rails, and the TFBGA package withstands vibration and thermal cycling.
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Networking Equipment
For networking equipment like routers and switches, the NT5CC256M16CP-DINA provides high-bandwidth memory for packet buffering and routing tables. The 1600 Mbps data rate ensures low latency, while the low power consumption is critical for energy-efficient network devices. The industrial temperature range supports outdoor and telecom environments.
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Medical Devices
In medical devices, the NT5CC256M16CP-DINA offers reliable memory for imaging and monitoring equipment. Its high density supports large data buffers, and the low voltage reduces power consumption in portable devices. The wide temperature range ensures operation in clinical environments, and RoHS compliance meets medical regulations.
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Test and Measurement
The NT5CC256M16CP-DINA is used in test and measurement instruments for high-speed data acquisition. Its 1600 Mbps data rate enables fast sampling, while the 4Gb capacity stores large waveforms. The industrial temperature range supports benchtop and field instruments, and the TFBGA package offers compact integration.
推薦
推薦產品摘要
工程參考資料，適用於 NT5CC256M16CP-DINA — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16DP-DI | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11 | 11 | 11 | 11 |
| Operating Temperature | -40°C to +105°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
主要差異化特點
- Wide temperature range (對比MT41K256M16HA-125)
- Low voltage operation (對比K4B4G1646D-BYK0)
- Same-brand availability (對比IS43TR16512B-125KBLI)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DDR3L signals with controlled impedance (typically 50 ohms single-ended, 100 ohms differential) to ensure signal integrity at 1600 Mbps.
The NT5CC256M16CP-DINA operates up to +105°C in automotive applications. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal characteristics and derating guidelines.
Follow the layout guidelines in the Nanya datasheet for DDR3L routing. Keep address/control signals matched in length to data signals, and use on-die termination (ODT) settings to reduce reflections. Maintain proper spacing between differential pairs and avoid vias on high-speed signals where possible.
合規資訊
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory components.
