NT5CC256M16ER-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16ER-FLNA ✓ نشطNT5CC256M16ER-FLNA نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial systems where energy efficiency is critical.
Key features include a 4Gb density, 16-bit data bus, 1.35V core power supply, and support for 1.5V I/O for compatibility. The device offers programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It also includes a temperature sensor for thermal management and supports auto refresh and self refresh modes to maintain data integrity.
Architecturally, the NT5CC256M16ER-FLNA uses an 8-bank design with a 16n prefetch architecture, enabling high-speed data transfer. The TFBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm and dimensions of 13mm x 8mm. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs, while the industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper operation.
بدائل مباشرة لـ NT5CC256M16ER-FLNA — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CC256M16ER-FLNA (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, CAS Latency, Supply Voltage, Burst Length.
NT5CC256M16ER-FL
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16ER-EK
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16ER-EKI
✅ بديل مباشر✗ غير متوفر
$16.7045 / وحدة
عرض ورقة البيانات ←MT41K256M16TW-107:P
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C256M16D3LC-10BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IS43TR16512B-107MBL
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16ER-FLNA الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gb |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage | 1.5 V |
| معدل البيانات | 1866 Mbps (max) |
| العلبة | 96-ball TFBGA |
| Number of Terminals | 96 |
| نطاق درجة حرارة التشغيل | 0°C to +95°C (commercial/industrial) |
| زمن الوصول CAS | Programmable (e.g., 13, 14) |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| Refresh | Auto and self refresh |
| RoHS | Compliant |
| Lead-Free | Yes |
تكوين أطراف NT5CC256M16ER-FLNA
| دبوس A1 | VDD — Core power supply (1.35V) |
| دبوس A2 | VSS — Ground |
| دبوس B1 | DQ0 — Data input/output 0 |
| دبوس B2 | DQ1 — Data input/output 1 |
| دبوس C1 | DQ2 — Data input/output 2 |
| دبوس C2 | DQ3 — Data input/output 3 |
| دبوس D1 | VDDQ — I/O power supply (1.5V) |
| دبوس D2 | VSSQ — I/O ground |
| دبوس E1 | A0 — Address input 0 |
| دبوس E2 | A1 — Address input 1 |
| دبوس F1 | A2 — Address input 2 |
| دبوس F2 | A3 — Address input 3 |
| دبوس G1 | BA0 — Bank address 0 |
| دبوس G2 | BA1 — Bank address 1 |
| دبوس H1 | RAS# — Row address strobe |
| دبوس H2 | CAS# — Column address strobe |
| دبوس J1 | WE# — Write enable |
| دبوس J2 | CS# — Chip select |
| دبوس K1 | CK — Clock input |
| دبوس K2 | CK# — Complementary clock input |
| دبوس L1 | CKE — Clock enable |
| دبوس L2 | ODT — On-die termination |
| دبوس M1 | ZQ — Calibration reference (240 ohm to ground) |
| دبوس M2 | RESET# — Asynchronous reset |
التطبيقات النموذجية
NT5CC256M16ER-FLNA مناسب لـ 6 التطبيقs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-FLNA is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 16-bit data bus allow for compact SO-DIMM designs. The 1866 Mbps data rate ensures smooth multitasking and responsive performance. With a 96-ball TFBGA package, it fits easily on small PCBs. The industrial temperature range also supports rugged laptops used in field environments.
موصى به
Embedded Systems
In embedded systems, the NT5CC256M16ER-FLNA provides high-density memory with low power consumption, making it suitable for industrial controllers, IoT gateways, and networking equipment. Its 1.35V operation reduces heat generation, and the 0°C to +95°C temperature range ensures reliability in harsh environments. The 96-ball TFBGA package is ideal for space-constrained designs. The device supports features like write leveling and ZQ calibration, which improve signal integrity in high-speed layouts.
موصى به
Networking Equipment
The NT5CC256M16ER-FLNA is well-suited for networking equipment such as routers, switches, and firewalls, where high bandwidth and low latency are critical. Its 1866 Mbps data rate supports fast packet processing, while the 4Gb density provides ample buffering for large data flows. The low 1.35V operation reduces power consumption in always-on devices. The industrial temperature range ensures stable operation in telecom cabinets. The 96-ball TFBGA package allows for high-density board layouts.
موصى به
Industrial PCs
Industrial PCs require reliable memory that can operate in wide temperature ranges and harsh conditions. The NT5CC256M16ER-FLNA meets these requirements with its 0°C to +95°C operating range and robust design. Its 4Gb density supports demanding applications like machine vision and process control. The low 1.35V operation reduces power consumption and heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package provides good thermal performance and mechanical stability.
موصى به
Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-FLNA offers a balance of performance and power efficiency. Its 1866 Mbps data rate enables smooth video streaming and gaming, while the 1.35V operation helps meet energy efficiency standards. The 4Gb density is sufficient for modern applications. The 96-ball TFBGA package is compact, allowing for slim device designs. The commercial temperature range (0°C to +95°C) covers typical consumer environments.
موصى به
Automotive Infotainment
The NT5CC256M16ER-FLNA is suitable for automotive infotainment systems that require high memory bandwidth for navigation, multimedia, and connectivity features. Its 1866 Mbps data rate supports smooth graphics and video playback. The 1.35V operation reduces power consumption, which is important in vehicles. The industrial temperature range (0°C to +95°C) is suitable for cabin environments. The 96-ball TFBGA package is robust against vibration. However, for automotive-grade (AEC-Q100) requirements, consider the -FLA variant.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CC256M16ER-FLNA — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CC256M16ER-FL | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Automotive Grade | No | No | No | No |
أبرز الفروقات
- Low voltage operation (1.35V) reduces power consumption by ~20% compared to standard DDR3 (مقابلStandard DDR3 parts)
- Industrial temperature range (0°C to +95°C) ensures reliability in harsh environments (مقابلCommercial-only parts)
- High data rate up to 1866 Mbps supports demanding applications (مقابلLower speed DDR3L parts)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route high-speed signals with controlled impedance (typically 50 ohms single-ended, 100 ohms differential). Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity.
The NT5CC256M16ER-FLNA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, verify that the junction temperature stays within limits.
Ensure the ZQ pin is connected to ground through a 240-ohm resistor (1% tolerance) for proper calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Also, verify that the supply voltage ramp-up meets the datasheet requirements to avoid undefined states.
معلومات الامتثال
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; automotive grade is available as NT5CC256M16ER-FLA.
