NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16ER-EK ✓ نشطNT5CC256M16ER-EK نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
بدائل مباشرة لـ NT5CC256M16ER-EK — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CC256M16ER-EK (نفس عامل الشكل والبصمة) — يختلف في Supply Voltage, Data Rate, CAS Latency, Package, Density.
NT5CC256M16ER-EKI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16TW-107:P
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C256M16D3LC-10BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IS43TR16512B-107MBL
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646E-HCK0
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
H5TQ2G83AFR-PBC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16ER-EK الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gbit |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35 V |
| معدل البيانات | 933 MHz (DDR3L-1866) |
| العلبة | TFBGA-96 |
| درجة حرارة التشغيل | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| الواجهة | Parallel |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
تكوين أطراف NT5CC256M16ER-EK
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VDD — Power supply |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VSS — Ground |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VDD — Power supply |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VSS — Ground |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDD — Power supply |
| دبوس C2 | DQS0 — Data strobe 0 |
| دبوس C3 | DQS0# — Data strobe 0 complement |
| دبوس C4 | VSS — Ground |
| دبوس C5 | DQS1 — Data strobe 1 |
| دبوس C6 | DQS1# — Data strobe 1 complement |
| دبوس C7 | VDD — Power supply |
| دبوس C8 | DQS2 — Data strobe 2 |
| دبوس C9 | DQS2# — Data strobe 2 complement |
| دبوس C10 | VSS — Ground |
| دبوس C11 | DQS3 — Data strobe 3 |
| دبوس C12 | DQS3# — Data strobe 3 complement |
| دبوس D1 | VDD — Power supply |
| دبوس D2 | A0 — Address input 0 |
| دبوس D3 | A1 — Address input 1 |
| دبوس D4 | VSS — Ground |
| دبوس D5 | A2 — Address input 2 |
| دبوس D6 | A3 — Address input 3 |
| دبوس D7 | VDD — Power supply |
| دبوس D8 | A4 — Address input 4 |
| دبوس D9 | A5 — Address input 5 |
| دبوس D10 | VSS — Ground |
| دبوس D11 | A6 — Address input 6 |
| دبوس D12 | A7 — Address input 7 |
| دبوس E1 | VDD — Power supply |
| دبوس E2 | A8 — Address input 8 |
| دبوس E3 | A9 — Address input 9 |
| دبوس E4 | VSS — Ground |
| دبوس E5 | A10/AP — Address input 10 / Auto precharge |
| دبوس E6 | A11 — Address input 11 |
| دبوس E7 | VDD — Power supply |
| دبوس E8 | A12 — Address input 12 |
| دبوس E9 | A13 — Address input 13 |
| دبوس E10 | VSS — Ground |
| دبوس E11 | A14 — Address input 14 |
| دبوس E12 | A15 — Address input 15 |
| دبوس F1 | VDD — Power supply |
| دبوس F2 | BA0 — Bank address 0 |
| دبوس F3 | BA1 — Bank address 1 |
| دبوس F4 | VSS — Ground |
| دبوس F5 | BA2 — Bank address 2 |
| دبوس F6 | RAS# — Row address strobe |
| دبوس F7 | VDD — Power supply |
| دبوس F8 | CAS# — Column address strobe |
| دبوس F9 | WE# — Write enable |
| دبوس F10 | VSS — Ground |
| دبوس F11 | CS# — Chip select |
| دبوس F12 | CKE — Clock enable |
| دبوس G1 | VDD — Power supply |
| دبوس G2 | ODT — On-die termination |
| دبوس G3 | CK — Clock |
| دبوس G4 | VSS — Ground |
| دبوس G5 | CK# — Clock complement |
| دبوس G6 | RESET# — Reset |
| دبوس G7 | VDD — Power supply |
| دبوس G8 | DM0 — Data mask 0 |
| دبوس G9 | DM1 — Data mask 1 |
| دبوس G10 | VSS — Ground |
| دبوس G11 | DM2 — Data mask 2 |
| دبوس G12 | DM3 — Data mask 3 |
| دبوس H1 | VDD — Power supply |
| دبوس H2 | VDDQ — DQ power supply |
| دبوس H3 | VSSQ — DQ ground |
| دبوس H4 | VSS — Ground |
| دبوس H5 | VDDQ — DQ power supply |
| دبوس H6 | VSSQ — DQ ground |
| دبوس H7 | VDD — Power supply |
| دبوس H8 | VDDQ — DQ power supply |
| دبوس H9 | VSSQ — DQ ground |
| دبوس H10 | VSS — Ground |
| دبوس H11 | VDDQ — DQ power supply |
| دبوس H12 | VSSQ — DQ ground |
التطبيقات النموذجية
NT5CC256M16ER-EK مناسب لـ 6 التطبيقs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
موصى به
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
موصى به
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
موصى به
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
موصى به
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
موصى به
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CC256M16ER-EK — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
أبرز الفروقات
- Low-voltage operation at 1.35V (مقابلStandard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (مقابلSome competitors limited to +85°C)
- High density 4Gb in 256Mx16 (مقابلLower density parts like 2Gb)
ملاحظات التصميم
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
معلومات الامتثال
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
