H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
MPN: H5TC4G63AFR-PBJ ✓ نشطH5TC4G63AFR-PBJ نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, offering a 15% power reduction compared to standard DDR3 at 1.5V. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 256M x 16 organization, 96-ball TFBGA package, industrial temperature grade (-40°C to +95°C), and support for 8192 refresh cycles. The device supports auto self-refresh, data mask, auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and write leveling, ensuring reliable operation in demanding environments.
The H5TC4G63AFR-PBJ uses a CMOS process and features a rectangular package shape. It is designed for high-density, high-bandwidth, and low-power applications. The industrial temperature grade allows operation in harsh conditions, making it ideal for automotive, industrial, and networking applications.
Typical applications include main memory for embedded processors, networking routers and switches, industrial PCs, and test equipment. The low voltage and high bandwidth make it suitable for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The ZQ calibration pin requires a 240-ohm resistor to ground for optimal signal quality.
بدائل مباشرة لـ H5TC4G63AFR-PBJ — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5TC4G63AFR-PBJ (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
H5TC4G63AFR-PBR
✅ بديل مباشر✗ غير متوفر
$5.9091 / وحدة
عرض ورقة البيانات ←H5TC4G63AFR-PBA
✅ بديل مباشر✗ غير متوفر
$3.9773 / وحدة
عرض ورقة البيانات ←H5TC4G63AFR-PBI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR-G7A
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR-H9A
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BCK00
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16RE-125:D
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16ER-EK
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR-PBJ الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4 Gb (256M x 16) |
| جهد التغذية | 1.35 V |
| العلبة | 96-ball TFBGA |
| Temperature Grade | Industrial (-40°C to +95°C) |
| Refresh Cycles | 8192 |
| Package Shape | Rectangular |
| Number of Terminals | 96 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | Yes |
| Data Mask | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
تكوين أطراف H5TC4G63AFR-PBJ
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس B1 | DQ2 — Data input/output 2 |
| دبوس B2 | DQ3 — Data input/output 3 |
| دبوس B3 | VDDQ — I/O power supply |
| دبوس B4 | DQ4 — Data input/output 4 |
| دبوس C1 | DQ5 — Data input/output 5 |
| دبوس C2 | DQ6 — Data input/output 6 |
| دبوس C3 | DQ7 — Data input/output 7 |
| دبوس C4 | VSS — Ground |
| دبوس D1 | VDD — Power supply |
| دبوس D2 | A0 — Address input 0 |
| دبوس D3 | A1 — Address input 1 |
| دبوس D4 | A2 — Address input 2 |
| دبوس E1 | A3 — Address input 3 |
| دبوس E2 | A4 — Address input 4 |
| دبوس E3 | A5 — Address input 5 |
| دبوس E4 | A6 — Address input 6 |
| دبوس F1 | A7 — Address input 7 |
| دبوس F2 | A8 — Address input 8 |
| دبوس F3 | A9 — Address input 9 |
| دبوس F4 | A10/AP — Address input 10 / Auto-precharge |
| دبوس G1 | A11 — Address input 11 |
| دبوس G2 | A12 — Address input 12 |
| دبوس G3 | A13 — Address input 13 |
| دبوس G4 | A14 — Address input 14 |
| دبوس H1 | BA0 — Bank address 0 |
| دبوس H2 | BA1 — Bank address 1 |
| دبوس H3 | BA2 — Bank address 2 |
| دبوس H4 | VSS — Ground |
| دبوس J1 | CK — Clock input |
| دبوس J2 | CK# — Complementary clock input |
| دبوس J3 | CKE — Clock enable |
| دبوس J4 | CS# — Chip select |
| دبوس K1 | RAS# — Row address strobe |
| دبوس K2 | CAS# — Column address strobe |
| دبوس K3 | WE# — Write enable |
| دبوس K4 | ODT — On-die termination |
| دبوس L1 | DM0 — Data mask 0 |
| دبوس L2 | DM1 — Data mask 1 |
| دبوس L3 | ZQ — ZQ calibration (240-ohm resistor to ground) |
| دبوس L4 | VDD — Power supply |
التطبيقات النموذجية
H5TC4G63AFR-PBJ مناسب لـ 6 التطبيقs: Embedded Processors, Networking Equipment, Industrial PCs, Test and Measurement, Automotive Infotainment, Medical Devices.
Embedded Processors
The H5TC4G63AFR-PBJ provides 4Gb DDR3L memory for embedded processors, offering high bandwidth and low power at 1.35V. Its industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments. The 256M x 16 organization supports 16-bit data bus widths, ideal for SoCs and FPGAs. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during low-power states, making it suitable for always-on embedded systems.
موصى به
Networking Equipment
In networking routers and switches, the H5TC4G63AFR-PBJ delivers high-bandwidth memory for packet buffering and forwarding tables. Its 1.35V operation reduces power consumption in 24/7 operation, while the industrial temperature grade supports outdoor and industrial networking gear. The 96-ball TFBGA package enables compact PCB layouts, and features like dynamic on-chip termination and write leveling improve signal integrity at high speeds, ensuring reliable data transmission.
موصى به
Industrial PCs
Industrial PCs require robust memory that can withstand temperature fluctuations and vibration. The H5TC4G63AFR-PBJ's industrial temperature grade (-40°C to +95°C) and 96-ball TFBGA package provide durability. Its 4Gb density supports multitasking and data logging, while 1.35V operation reduces heat generation. Features like auto precharge and data mask enhance memory efficiency, making it ideal for factory automation and process control systems.
موصى به
Test and Measurement
Test equipment such as oscilloscopes and logic analyzers require high-speed data acquisition and storage. The H5TC4G63AFR-PBJ offers high bandwidth and low latency, enabling fast waveform capture. Its 1.35V low-power operation is beneficial for portable instruments. The industrial temperature grade ensures accuracy in varying lab conditions. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during long captures, making it a reliable choice for precision measurement.
موصى به
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBJ provides high-bandwidth memory for navigation, multimedia, and instrument clusters. Its industrial temperature grade supports under-hood and cabin environments. The 1.35V operation reduces power draw from the vehicle battery. Features like dynamic on-chip termination and write leveling ensure signal integrity in noisy automotive environments. The 96-ball TFBGA package withstands vibration, making it suitable for in-vehicle electronics.
موصى به
Medical Devices
Medical devices such as patient monitors and diagnostic equipment require reliable, high-capacity memory. The H5TC4G63AFR-PBJ's industrial temperature grade ensures operation in clinical environments. Its 4Gb density supports complex algorithms and data logging. The 1.35V low-power operation is critical for battery-powered portable devices. Features like auto self-refresh and data mask enhance data integrity, making it suitable for life-critical applications where memory reliability is paramount.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5TC4G63AFR-PBJ — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5TC4G63AFR-PBR | H5TC4G63AFR-PBA | K4B4G1646D-BCK00 | MT41K256M16RE-125:D |
|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Temperature Grade | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
أبرز الفروقات
- Industrial temperature grade (-40°C to +95°C) (مقابلK4B4G1646D-BCK00)
- Same-brand drop-in variants with different speed grades (مقابلH5TC4G63AFR-PBA)
- Cross-brand availability from Samsung and Micron (مقابلK4B4G1646D-BCK00)
ملاحظات التصميم
For optimal signal integrity, route DDR3L traces with controlled impedance (typically 40-60 ohms single-ended, 80-120 ohms differential). Keep trace lengths matched within 50 mils for address/control and 20 mils for data. Place the ZQ pin's 240-ohm resistor (1% tolerance) as close to the ball as possible, with a clean ground return. Use a solid ground plane beneath the memory device to minimize noise.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed within 100 mils of each ball. Use a 10uF bulk capacitor near the memory power input. The 1.35V supply should have low ripple (<50mV) to ensure reliable operation. Consider using a dedicated DDR3L power regulator with good transient response.
The industrial temperature grade allows operation up to +95°C, but ensure adequate airflow or heatsinking if the device is in a confined enclosure. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; provide at least 4 thermal vias under the exposed pad to improve heat dissipation. Monitor junction temperature to stay within the specified range.
معلومات الامتثال
Compliance information not explicitly provided in the verified data. Check the manufacturer datasheet or contact SK Hynix for RoHS/REACH status.
