NT5CB256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CB256M16CP-EK ✓ نشطNT5CB256M16CP-EK نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile, embedded, and industrial systems where power efficiency is critical, and it is backward compatible with DDR3 through its support for both 1.35V and 1.5V operation.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for data rates up to 2133 Mbps. The device operates from a 1.35V supply (1.425V to 1.575V range) and features programmable CAS Latency (CL) of 9, 10, 11, 12, 13, and 14, and WRITE Latency (CWL) of 5, 6, 7, 8, and 9. It also supports on-die termination (ODT), dynamic ODT, and programmable output driver impedance. The industrial and automotive temperature grades ensure reliable operation from -40°C to +95°C (case temperature).
Technically, the NT5CB256M16CP uses a 30nm-class DRAM process, enabling high density with low power. The device includes 8 internal banks (BA0-BA2) for efficient interleaving and reduced row activation overhead. Differential clock inputs (CK, CK#) improve signal integrity, and the programmable additive latency (AL) supports posted CAS operations for improved bus efficiency. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8us at 85°C and 3.9us at 95°C.
Typical applications include embedded computing, networking equipment, industrial automation, automotive infotainment and ADAS, and high-performance consumer electronics. The 256M x 16 organization is well-suited for systems requiring a 16-bit memory bus, such as SoCs and FPGAs with wide memory interfaces. The low-voltage operation makes it ideal for battery-powered and thermally constrained designs.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing, including matched trace lengths and impedance control (typically 40-50 ohms). The VREFCA and VREFDQ should be decoupled with 0.1uF capacitors to ground.
بدائل مباشرة لـ NT5CB256M16CP-EK — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CB256M16CP-EK (نفس عامل الشكل والبصمة) — يختلف في Package, Supply Voltage, Data Rate, Operating Temperature, CAS Latency (CL).
NT5CB256M16CP-DI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CB256M16DP-EK
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16CP-EK
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16TW-107
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CB256M16CP-EK الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4Gb |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35V (1.425V to 1.575V) |
| معدل البيانات | DDR3-2133 (CL14) |
| CAS Latency (CL) | 9, 10, 11, 12, 13, 14 |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 |
| Posted CAS Additive Latency | Programmable |
| Internal Banks | 8 (BA0-BA2) |
| العلبة | 96-ball TFBGA |
| درجة حرارة التشغيل | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C |
| RoHS | Compliant |
| REACH | Compliant |
| Lead-Free | Yes |
| نوع التركيب | Surface Mount |
تكوين أطراف NT5CB256M16CP-EK
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس B1 | DQ2 — Data input/output 2 |
| دبوس B2 | DQ3 — Data input/output 3 |
| دبوس B3 | VDDQ — DQ power supply |
| دبوس C1 | DQ4 — Data input/output 4 |
| دبوس C2 | DQ5 — Data input/output 5 |
| دبوس C3 | VSSQ — DQ ground |
| دبوس D1 | DQ6 — Data input/output 6 |
| دبوس D2 | DQ7 — Data input/output 7 |
| دبوس D3 | VDD — Power supply |
| دبوس E1 | DM0 — Data mask 0 |
| دبوس E2 | DQS0 — Data strobe 0 |
| دبوس E3 | DQS0# — Data strobe 0 complement |
التطبيقات النموذجية
NT5CB256M16CP-EK مناسب لـ 6 التطبيقs: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Test and Measurement.
Embedded Computing
The NT5CB256M16CP-EK provides high-density, low-power memory for embedded processors and SoCs. Its 256M x 16 organization matches wide memory buses, and the 1.35V operation reduces power in thermally constrained designs. With data rates up to DDR3-2133, it supports high-bandwidth applications like industrial PCs and edge computing. The 96-ball TFBGA package enables compact PCB layouts, and the industrial temperature grade ensures reliability in harsh environments.
موصى به
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-EK provides fast, reliable memory for packet buffering and routing tables. Its DDR3-2133 data rate and 16-bit bus deliver high throughput, while the low 1.35V supply reduces power in 24/7 operation. The 8 internal banks enable efficient interleaving, minimizing latency. The commercial temperature grade is suitable for standard networking environments, and the TFBGA package fits space-constrained line cards.
موصى به
Industrial Automation
The NT5CB256M16CP-EK is ideal for industrial controllers and PLCs that require reliable memory in wide temperature ranges. Its industrial grade supports -40°C to +95°C, ensuring operation in factory floors. The 4Gb density provides ample storage for control algorithms and data logging. The low-voltage operation reduces heat generation, and the 96-ball TFBGA package withstands vibration. With DDR3-2133 speed, it handles real-time data processing efficiently.
موصى به
Automotive Infotainment
For automotive infotainment systems, the NT5CB256M16CP-EK offers high-bandwidth memory for navigation, multimedia, and instrument clusters. Its automotive temperature grade (-40°C to +95°C) meets AEC-Q100 requirements. The 1.35V supply reduces power in vehicles, and the 256M x 16 organization supports high-resolution displays. The 8 banks enable smooth multitasking, and the TFBGA package is robust for automotive environments.
موصى به
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the NT5CB256M16CP-EK provides fast, low-power memory for smooth graphics and multitasking. Its DDR3-2133 speed ensures responsive performance, while the 1.35V operation extends battery life in portable devices. The 16-bit bus is ideal for media processors, and the compact TFBGA package fits slim designs. The commercial temperature grade is sufficient for consumer environments.
موصى به
Test and Measurement
The NT5CB256M16CP-EK is used in oscilloscopes and signal analyzers for high-speed data acquisition and processing. Its DDR3-2133 bandwidth supports fast sampling rates, and the 4Gb density stores large waveforms. The low-voltage operation reduces noise, and the 8 banks enable efficient data streaming. The industrial temperature grade ensures accuracy in lab and field environments. The TFBGA package allows dense memory arrays on test equipment PCBs.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CB256M16CP-EK — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CB256M16CP-DI | NT5CB256M16DP-EK | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3-2133 | DDR3-2133 | DDR3-1866 | DDR3-2133 |
| Temperature Grade | Commercial/Industrial/Automotive | Industrial | Commercial | Commercial/Industrial |
| CAS Latency | 9-14 | 9-14 | 9-13 | 9-14 |
أبرز الفروقات
- Automotive temperature grade available (مقابلNT5CB256M16CP-DI)
- Higher data rate than some alternatives (مقابلNT5CB256M16DP-EK)
- Low-voltage operation (مقابلMT41K256M16TW-107)
ملاحظات التصميم
For DDR3L routing, maintain 40-50 ohm single-ended impedance and 80-100 ohm differential impedance for DQS and CK signals. Match trace lengths within +/- 50 mils for data and address/control groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Reference the Nanya layout guidelines in the datasheet for optimal signal integrity.
The NT5CB256M16CP-EK requires a clean 1.35V supply. Use a low-noise LDO or DC-DC converter with sufficient current capability (typically 1-2A for 4Gb). Add bulk capacitance (10uF) and high-frequency decoupling (0.1uF) at the memory power pins. Ensure VDD and VDDQ are properly decoupled to minimize voltage droop during switching.
The TFBGA package has a thermal resistance of approximately 20-30 C/W (theta_JA). For industrial applications at 95°C case temperature, ensure adequate airflow or a heatsink if the memory is heavily accessed. The low 1.35V operation reduces power dissipation, but sustained high-speed operation can generate significant heat. Monitor junction temperature to stay within the specified range.
معلومات الامتثال
RoHS and REACH compliant per distributor data. AEC-Q100 not applicable for DRAM; automotive grade is based on temperature range.
