H5AN8G6NCJR-VKC Complete Guide: SK hynix 8Gb DDR4 SDRAM 2666Mbps Specs, Pricing, and Design-In

H5AN8G6NCJR-VKC Complete Guide: SK hynix 8Gb DDR4 SDRAM 2666Mbps Specs, Pricing, and Design-In
H5AN8G6NCJR-VKC: SK hynix 8Gb DDR4 SDRAM, 512M x16, 2666 Mbps, 1.2V, FBGA-96. In stock from $60 (as of 2026-09-14). Full specs & design guide.

The SK hynix H5AN8G6NCJR-VKC is a high-performance 8Gb CMOS Double Data Rate IV (DDR4) SDRAM organized as 512M x16, operating at a data rate of 2666 Mbps (PC4-2133) from a nominal 1.2V supply (1.14V to 1.26V range) in a compact 96-ball FBGA package. It draws a typical 28 mA (IDD2N) and 45 mA (IDD4R), making it a power-efficient choice for server main memory, networking equipment, HPC clusters, and embedded systems. Key reliability features include auto self-refresh, write leveling, CRC, dynamic ODT, and ZQ calibration. The part is lead-free and halogen-free with RoHS and REACH compliance, and its lifecycle status is active. As of 2026-09-14, XAIPART lists 99,999 units in stock with MOQ 1, priced from $79.55 per unit down to $60.00 at 1000 units. Check live pricing on the H5AN8G6NCJR-VKC product page.

H5AN8G6NCJR-VKC

What Are the Verified Specifications of the H5AN8G6NCJR-VKC?

The table below consolidates every verified specification from the XAIPART product database, anchored to the SK hynix datasheet:

ParameterValue
ManufacturerSK hynix
Memory TypeDDR4 SDRAM
Density8 Gb
Organization512M x 16
Data Rate2666 Mbps (PC4-2133)
Supply Voltage (VDD)1.2 V (1.14V to 1.26V)
Operating Temperature0°C to +95°C (TC)
PackageFBGA-96, 0.8mm ball pitch
Operating Current (IDD2N)28 mA
Operating Current (IDD4R)45 mA
Burst Length8 (BC4)
EnvironmentalLead-free, halogen-free, RoHS and REACH compliant
Lifecycle StatusActive

Feature set verified from the datasheet includes programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC for data integrity, auto self-refresh, auto precharge, asynchronous reset, and data mask functions.

How Do You Design In the H5AN8G6NCJR-VKC?

Power Supply Design

Power the device from a regulated 1.2V rail that holds the 1.14V to 1.26V range across all load conditions, including the 45 mA IDD4R read-burst current. Decouple both VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the balls, as the datasheet prescribes. VDDQ runs at the same voltage as VDD for the I/O interface.

Signal Integrity and Layout

Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout: use controlled impedance traces and matched lengths for the data, address, and command buses. The 0.8mm ball pitch of the FBGA-96 package enables high-speed signal routing on dense boards. Enable write leveling and dynamic ODT during controller initialization to compensate for trace-length mismatch on longer DIMM-style topologies.

Key Signal Connections

From the verified pinout: the differential clock pair CK (pin G2) and CK# (pin G3) connects to the memory controller. The data lane includes DQ0 through DQ7 (pins A2, B1, B3, C1, C3, D1, D3, E1), the differential data strobe DQS0 (pin E3) and DQS0# (pin F1), and the data mask DM0 (pin F3). Power pins include VDD at A1 and D2, VDDQ at B2, with VSS grounds at A3 and E2 and VSSQ I/O grounds at C2 and G1. The complete ball map is on the product page.

Worked Design Example: Bandwidth and Power Budget

One device delivers 8 Gb (1 GB) of memory. At the 2666 Mbps PC4-2133 rating on the 16-bit bus, theoretical bandwidth per device is 2666 Mb/s × 16 = 42,656 Mb/s ≈ 5.33 GB/s, transferring on both clock edges as a fully synchronous device referencing rising and falling edges of the clock. Quiescent power is 1.2 V × 28 mA = 33.6 mW; read-burst power is 1.2 V × 45 mA = 54 mW. A design using eight devices therefore supplies 8 GB of memory with roughly 43 GB/s of aggregate theoretical bandwidth while drawing only ~270 mW quiescent — an easy thermal fit for compact networking line cards and embedded controllers. For 0°C to +95°C ambient designs, validate board-level thermal dissipation within the verified TC range; for extended temperature ranges, the datasheet guidance points to automotive-grade DDR4 parts instead.

Procurement Notes

As of 2026-09-14, XAIPART stock stands at 99,999 units with MOQ 1. Volume tiers: $79.55 at qty ≥1, $75 at qty ≥10, $70 at qty ≥100, $65 at qty ≥500, and $60 at qty ≥1000. Plan board revisions against the active lifecycle status and re-verify stock at XAIPART before each build.

What Are the Best Alternatives to the H5AN8G6NCJR-VKC?

Only alternatives present in the XAIPART database are listed here. The Micron MT40A1G8SA-075E is a cross-brand, pin-compatible alternative with matching 8Gb DDR4 density and 2666 Mbps speed. The database also references the SK hynix H5AN8G6NDJR-XNC (same FBGA-96, faster 3200 Mbps grade) and the Samsung K4A8G165WB-BCRC as pin-compatible options; verify pin compatibility before substitution.

ParameterH5AN8G6NCJR-VKCMT40A1G8SA-075E
ManufacturerSK hynixMicron
Memory TypeDDR4 SDRAMDDR4 SDRAM
Density8 Gb8 Gb
Data Rate2666 Mbps (PC4-2133)2666 Mbps (speed grade 075E)
RelationshipBase productCross-brand pin-compatible alternative

Qualification guidance: for a same-speed second source, the MT40A1G8SA-075E matches density and data rate. If your memory controller supports a faster grade and you want speed headroom, the H5AN8G6NDJR-XNC at 3200 Mbps is the pin-compatible upgrade path within the same FBGA-96 footprint — but confirm pin compatibility on your schematic before qualifying either substitute.

What Is the Market Position and Supply Situation for the H5AN8G6NCJR-VKC?

The H5AN8G6NCJR-VKC carries an active lifecycle status, confirming SK hynix continues to manufacture and support the part. DDR4 remains the industry-standard main memory for servers, desktops, laptops, and embedded systems, so this 8Gb, 2666 Mbps class of device sits squarely in mainstream demand for server DIMMs, networking line cards, and SoM designs. On the supply side, XAIPART holds 99,999 units in stock as of 2026-09-14 with MOQ 1, which covers both prototype orders and volume production runs at the $60 tier (qty ≥1000). Distributors such as LCSC, Octopart, and Worldway Electronics also list the part; LCSC shows it in stock while other channels may quote 4–8 week lead times, so confirm lead time with your distributor for production planning.

What Should Buyers Watch Next for DDR4 Memory Procurement?

Anchor your decisions to the verified specs and current availability of this part:

  • Price tiers reward volume: unit cost falls from $79.55 (qty 1) to $60.00 (qty 1000) — a 25% reduction — so consolidating orders into 500+ or 1000+ quantities captures the best landed cost as of 2026-09-14.
  • Speed headroom via pin-compatible upgrade: the FBGA-96-compatible H5AN8G6NDJR-XNC at 3200 Mbps lets future designs raise bandwidth ~20% over this part's 2666 Mbps without a footprint change, subject to pin-compatibility verification.
  • Power budgets favor DDR4 at 1.2V: with 33.6 mW quiescent and 54 mW read power per device versus DDR3's 1.5V class, the verified 28 mA IDD2N and 45 mA IDD4R figures let you build denser memory pools inside fixed thermal envelopes.
  • Environmental compliance is already covered: the part is lead-free, halogen-free, and RoHS/REACH compliant, simplifying regulatory sign-off for new designs.
  • Temperature windows: at 0°C to +95°C (TC), confirm your end-application environment fits the verified range before committing; otherwise evaluate automotive-grade DDR4 per the datasheet's guidance.

For current stock, live pricing, and the full ball-map pinout, visit the H5AN8G6NCJR-VKC product page or browse all Memory ICs on XAIPART.

Frequently Asked Questions

The H5AN8G6NCJR-VKC is an 8Gb DDR4 SDRAM organized as 512M x16. The 16-bit data bus makes it suitable for memory modules and embedded systems requiring high bandwidth.
It operates from a nominal 1.2V supply (VDD) with a range of 1.14V to 1.26V. VDDQ runs at the same voltage for the I/O interface, reducing power compared with DDR3's 1.5V.
The device supports a data rate of 2666 Mbps (PC4-2133) and is fully synchronous, referencing both rising and falling edges of the clock.
It comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package with a 0.8mm ball pitch, enabling compact, high-density board layouts and high-speed signal routing.
The operating range is 0°C to +95°C (TC), suitable for commercial and industrial applications. For extended temperature ranges, consider automotive-grade DDR4 parts.
Yes. The device is lead-free and halogen-free and complies with RoHS and REACH regulations.
As of 2026-09-14, pricing starts at $79.55 for one unit, dropping to $75 at 10 units, $70 at 100 units, $65 at 500 units, and $60 at 1000 units.
The SK hynix H5AN8G6NDJR-XNC is pin-compatible with a higher 3200 Mbps data rate. Cross-brand pin-compatible alternatives include the Samsung K4A8G165WB-BCRC and Micron MT40A1G8SA-075E; verify pin compatibility before substitution.
Yes. Its 8Gb density and 2666 Mbps data rate make it ideal for server DIMMs, and its 1.2V operation helps reduce server power budgets.
The 47-page datasheet PDF is available at https://www.alldatasheet.com/datasheet-pdf/pdf/1569777/ETC2/H5AN8G6NCJR-VKC.html, including full specifications, pinout, and timing diagrams.

Comparison Table

Parameter H5AN8G6NCJR-VKC MT40A1G8SA-075E
Manufacturer SK hynix Micron
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Data Rate 2666 Mbps (PC4-2133) 2666 Mbps (speed grade 075E)
Relationship to base part Base product Cross-brand pin-compatible alternative

The Micron MT40A1G8SA-075E is a cross-brand, pin-compatible alternative with matching 8Gb DDR4 density and 2666 Mbps speed. Additional alternatives referenced in the database include the SK hynix H5AN8G6NDJR-XNC (3200 Mbps, higher speed grade) and Samsung K4A8G165WB-BCRC; detailed specifications for those parts are not included in this dataset. Always verify pin compatibility before substitution.

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Sources & References

  1. H5AN8G6NCJR-VKC Datasheet — Datasheet, accessed 2026-09-14

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