1N5711SB - 70V 15mA Schottky Diode DO-35 | STMicroelectronics
MPN: 1N5711SB ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.21 | $21.00 |
| 500 | $0.15 | $75.00 |
| 1,000 | $0.11 | $110.00 |
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View Datasheet →1N5711SB Maximum Ratings & Electrical Characteristics
| Diode Type | Small Signal Schottky Barrier Diode |
| Peak Reverse Voltage (VRRM) | 70 V |
| Average Forward Current (IF(AV)) | 15 mA |
| Power Dissipation | 430 mW |
| Reverse Recovery Time | Ultrafast (Schottky, no stored charge) |
| Configuration | Single |
| Package | DO-35 (SOD-27) hermetic glass axial |
| Mounting Type | Through Hole |
| Junction Material | Metal-to-silicon junction |
| Primary Applications | UHF/VHF detection, mixing, switching, pulse shaping |
| Matched Batches | Available on request (ST) |
1N5711SB Pin Configuration
| Pin 1 | Cathode — Cathode lead - marked by the band on the glass body |
| Pin 2 | Anode — Anode lead - current enters here in forward conduction |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1N5711SB is suitable for 6 applications: UHF/VHF Signal Detection, RF Mixing and Frequency Conversion, Fast Pulse Shaping and Sampling Gates, Low-Level Switching in Narrow-Band Receivers, General-Purpose High-Speed Small-Signal Switching, RF Test and Measurement Probes.
UHF/VHF Signal Detection
The 1N5711SB fits RF envelope and level detection circuits because its metal-to-silicon Schottky junction provides a low turn-on voltage and negligible stored charge, enabling rectification of small UHF/VHF signals with broad dynamic range. Per the ST datasheet, the part is primarily intended for high-level UHF/VHF detection with matched batches available for paired detectors. In a typical half-wave detector, the diode feeds an RC load (for example 1 kOhm and 10 nF) whose time constant is long compared to the RF period, extracting the envelope. The 70 V rating provides headroom against receiver front-end transients, while the low capacitance minimizes loading of the tuned circuit.
Recommended
RF Mixing and Frequency Conversion
Schottky diodes such as the 1N5711SB serve as the nonlinear mixing element in passive single-diode and diode-ring mixers for VHF/UHF receivers. The metal-semiconductor junction switches at the LO rate with essentially zero reverse recovery, producing clean harmonic content for frequency conversion at low LO power. MACOM's application description for the 1N5711 explicitly lists mixing at low power levels as a primary use in narrow-band receivers. With 15 mA average current capability and 430 mW dissipation, the diode tolerates typical small-signal mixer drive levels, while its low junction capacitance preserves IF bandwidth and port isolation across the VHF/UHF range.
Recommended
Fast Pulse Shaping and Sampling Gates
In pulse circuitry, the 1N5711SB performs pulse shaping, sampling-gate clamping, and level shifting where transition times must stay in the nanosecond range. Because Schottky majority-carrier conduction stores no minority charge, the diode turns off instantly with no reverse-recovery tail - a decisive advantage over P-N switching diodes in sampling bridges and fast logic gates, as documented in the MACOM 1N5711 application description for UHF/VHF pulse shaping, sampling, and fast logic. The hermetic DO-35 glass body also withstands the repetitive peak currents of gate drive circuits within the 430 mW package dissipation limit, making it a reliable choice for test instrumentation front ends.
Recommended
Low-Level Switching in Narrow-Band Receivers
Narrow-band receiver front ends and AGC paths use the 1N5711SB as a low-power RF switch and detector-combiner. Its low forward turn-on voltage minimizes signal loss in passive switching configurations, and the 70 V breakdown gives robust ESD and overload tolerance relative to the small signals involved. Both ST and MACOM describe the 1N5711 family as suitable for commercial switching and control functions in narrow-band receivers. Matched batches available on request from ST allow designers to build balanced switching or detector pairs with closely tracked V-I curves, improving carrier suppression and detector linearity across temperature in communication equipment.
Recommended
General-Purpose High-Speed Small-Signal Switching
Beyond RF, the 1N5711SB works as an ultrafast general-purpose small-signal rectifier and clamp in instrumentation, test fixtures, and through-hole prototyping where the rugged DO-35 axial body simplifies hand assembly. The Diodes Incorporated cross-listed datasheet describes the same registered part as a Schottky barrier switching diode, and Microchip's DO-204AH version raises the current rating to 33 mA for slightly heavier loads. Reverse recovery is effectively zero, so the diode suits freewheeling and polarity-protection roles on fast digital or analog lines, provided the 15 mA average current and 70 V reverse limits of the SB suffix are respected in the design.
Recommended
RF Test and Measurement Probes
DIY and production RF probes, field-strength meters, and power detectors commonly use a 1N5711-class Schottky as the rectifying element feeding a sensitive DC voltmeter or instrumentation amplifier. The diode's low barrier lets it respond to signals of only a few hundred millivolts, and its low capacitance keeps probe loading below a picofarad-class value when combined with a series resistor. MACOM and ST both position the 1N5711 for detection and measurement in the UHF/VHF bands. The axial glass package allows direct soldering to probe tips and ground rings, and matched batches from ST improve accuracy in dual-diode compensated detector designs.
Recommended
Recommended Products Summary
Engineering reference data for 1N5711SB — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N5711 (ST) | 1N5711 (Diodes Inc) | 1N5711 (Microchip) | 1N5711UR-1 (Microchip) |
|---|---|---|---|---|---|
| Package | DO-35 (SOD-27) axial glass | DO-35 (SOD-27) - same | DO-35 - same | DO-204AH (DO-35) - same footprint | DO-213AA MELF - different (SMD) |
| Brand | STMicroelectronics | STMicroelectronics | Diodes Incorporated | Microchip Technology | MACOM Technology Solutions |
| Peak Reverse Voltage | 70 V | 70 V | 70 V | 70 V | [DATA_NEEDED] |
| Average Forward Current | 15 mA | 15 mA | [DATA_NEEDED] | 33 mA | [DATA_NEEDED] |
| Power Dissipation | 430 mW | 430 mW | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Diode Technology | Schottky barrier (metal-silicon) | Schottky barrier | Schottky barrier switching | Schottky | Silicon Schottky, hermetic glass |
| Reverse Recovery | Ultrafast (no stored charge) | Ultrafast | Ultrafast | Ultrafast | Ultrafast |
| Primary Application Focus | UHF/VHF detection, pulse applications | High-level UHF/VHF detection | General high-speed switching | General switching, higher current | Detecting, mixing, switching in UHF/VHF |
| Mounting Type | Through Hole (axial) | Through Hole | Through Hole | Through Hole | Surface Mount (MELF) |
Key Differentiators
- Hermetic glass DO-35 package for harsh environments (vs 1N5711UR-1 (Microchip))
- Optimized for high-level UHF/VHF detection (vs 1N5711 (Diodes Inc))
- Higher current headroom available in family (vs 1N5711 (ST base))
Design Notes
Respect the two hard limits of this part: 70 V peak reverse voltage and 15 mA average forward current (430 mW dissipation). In resonant or poorly terminated RF circuits, reverse ringing can exceed the DC supply voltage by a large factor - measure or simulate worst-case reverse stress, and add a small series resistor or margin-rated diode if ringing approaches the breakdown region. Also remember that Schottky leakage rises strongly with temperature; leakage that is negligible at 25 C can shift detector bias points at 85 C ambient.
Keep detector loops short. In a UHF/VHF envelope detector, the diode's cathode lead, load capacitor, and ground return form the RF loop; long leads add inductance that resonates with the load capacitance and distorts detection above a few hundred megahertz. Cut DO-35 leads to the minimum practical length, orient the body away from strong RF fields, and use a disc ceramic load capacitor (e.g. 1-10 nF) soldered directly across the diode output and ground for the cleanest envelope reproduction.
Estimated: at rated IF(AV) = 15 mA and a typical Schottky VF of roughly 0.3-0.4 V (verify against the ST datasheet curve), conduction loss is only about 4.5-6 mW - far below the 430 mW rating, so small-signal detector duty rarely stresses the part thermally. The derating concerns instead arise in pulse or clamp duty with repetitive peak currents; calculate average power as VF times duty-cycle-weighted current and keep it under 430 mW at 25 C free air, derating linearly at higher ambient temperatures per the manufacturer datasheet.
Compliance Information
Compliance data was not present in the provided web data for the 1N5711SB suffix; verify RoHS/REACH status on the ST product page for the exact ordering code before procurement.
