Memory ICs
Subcategories
Products (487)
W634GU6RB09I - 4Gb DDR3L SDRAM x16 1066MHz | Winbond
The W634GU6RB09I is a 4Gbit DDR3L SDRAM memory IC from Winbond Electronics, organized as 256M x 16 bits. It operates at a clock frequency of 1.067 GHz (DDR3L-2133) with a CAS latency of 20 ns, and is housed in a 96-ball VFBGA (7.5x13 mm) package. This device is designed for low-voltage operation at 1.35V, making it suitable for power-sensitive applications such as mobile devices, embedded systems, and networking equipment. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and industrial applications where energy efficiency is critical. Key features include a 4Gbit density, x16 data bus width, 1.067 GHz maximum clock speed, and industrial temperature range (-40°C to +95°C). The device supports burst lengths of 8 and 4, on-die termination (ODT), and programmable CAS latency. It is RoHS compliant and lead-free, meeting environmental standards. Technically, the W634GU6RB09I uses a 96-ball VFBGA package with a 0.8mm ball pitch, enabling high-density mounting on PCBs. The memory core is based on advanced DRAM process technology, providing high reliability and performance. The device includes auto-refresh and self-refresh modes for low-power standby, and supports DLL (Delay-Locked Loop) for precise timing. Typical applications include embedded computing, networking routers, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ for I/O, which should be regulated accurately.
W634GU6RB09J - 4Gb DDR3L SDRAM x16 1066MHz | Winbond
The Winbond W634GU6RB09J is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1066MHz (DDR3L-2133). It comes in a 96-ball VFBGA (7.5x13mm) package, offering a compact footprint for space-constrained designs. This memory IC is designed for high-bandwidth applications requiring low power consumption, making it ideal for mobile, embedded, and networking systems. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is backward-compatible with DDR3 and is widely used in laptops, servers, and industrial electronics where energy efficiency is critical. Key features include a 4Gbit density, x16 organization, 1.067 GHz clock speed, and a CAS latency of 20 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to +95°C (case temperature) and is RoHS compliant. The 96-VFBGA package measures 7.5x13mm with a 0.8mm ball pitch, enabling high-density PCB layouts. Technically, the W634GU6RB09J uses a 30nm-class process technology, achieving low power and high speed. It features internal calibration for ZQ, write leveling, and read leveling to ensure signal integrity at high frequencies. The device supports auto-refresh and self-refresh modes, reducing standby power. Its low voltage operation and advanced power management make it suitable for battery-powered devices. Typical applications include mobile computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and smart TVs. The high density and low power make it ideal for systems requiring large memory capacity with minimal energy consumption. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1066MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
W634GU6RB11I - 4Gb DDR3L SDRAM x16 933MHz | Winbond
The W634GU6RB11I is a 4Gbit DDR3L SDRAM memory IC from Winbond Electronics, organized as 256M x 16 bits. It operates at a clock frequency of 933 MHz (DDR3L-1866) with a CAS latency of 20 ns, and is supplied in a 96-ball VFBGA package measuring 7.5 x 13 mm. This device is designed for low-voltage operation at 1.35V, reducing power consumption by approximately 15% compared to standard 1.5V DDR3, making it ideal for power-sensitive applications. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It operates at a lower voltage (1.35V) than standard DDR3 (1.5V), offering improved energy efficiency. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical. Key features of the W634GU6RB11I include a parallel interface with a 16-bit data bus, support for industrial temperature range (-40°C to +95°C), and compatibility with JEDEC DDR3L standards. The device offers burst lengths of 8 and 4, on-die termination (ODT), and programmable CAS latency. Its low-voltage operation and high density make it suitable for applications requiring large memory capacity with minimal power draw. The W634GU6RB11I utilizes advanced DRAM process technology, achieving high-speed data transfer while maintaining low power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports auto-refresh and self-refresh modes, ensuring data integrity with minimal power consumption during idle periods. Typical applications include networking equipment (routers, switches), industrial automation, embedded computing, and consumer electronics such as set-top boxes and smart TVs. Its industrial temperature rating makes it suitable for harsh environments, while the low-voltage operation extends battery life in portable devices. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The VFBGA package requires careful PCB layout to route the fine-pitch balls, and the DDR3L interface should be terminated according to JEDEC guidelines to maintain signal integrity.
W634GU6RB11J - 4Gb DDR3L SDRAM x16 933MHz | Winbond
The Winbond W634GU6RB11J is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz (DDR3L-1866) with a data rate of 1866 MT/s. It is housed in a 96-ball VFBGA package (7.5x13 mm) and operates from a 1.35V supply, making it suitable for low-power applications. The device supports parallel interface with a burst length of 8 and features a 20 ns CAS latency. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical. Key features include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (DTC). These features enhance signal integrity and simplify system design. The device supports industrial temperature range from -40°C to +95°C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, aligning with environmental standards. Technically, the W634GU6RB11J uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The memory array is organized in 8 banks, and the device supports programmable CAS latency (CL) and additive latency (AL) for flexible timing. The on-die termination (ODT) feature improves signal quality by matching impedance, reducing reflections on the data bus. Typical applications include networking equipment, industrial automation, medical devices, and embedded computing systems where high-density, low-power memory is required. The 4Gb density and x16 organization make it ideal for applications needing moderate memory capacity with a wide data bus. When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, including controlled impedance traces and proper termination.
W634GU6RB12I - 4Gb DDR3L SDRAM x16 800MHz | Winbond
The W634GU6RB12I is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 800MHz (DDR3L-1600). It is housed in a 96-ball VFBGA (7.5x13mm) package and is designed for industrial temperature range (-40°C to +95°C). This memory IC is ideal for applications requiring high-density, low-power volatile storage. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in computing, networking, and embedded systems where power efficiency is critical. Key features include a parallel interface with 800MHz clock speed, 20ns row cycle time, and support for industrial temperature grades. The device is RoHS compliant and halogen-free, meeting environmental standards. The 96-ball VFBGA package offers a compact footprint suitable for space-constrained designs. The W634GU6RB12I utilizes advanced DRAM process technology, providing reliable performance with low power consumption. It supports standard DDR3L features such as on-die termination (ODT), programmable CAS latency, and burst lengths of 8. The industrial temperature grade ensures operation in harsh environments. Typical applications include industrial automation, networking equipment, embedded computing, and automotive infotainment systems. Its high density and low power make it suitable for memory-intensive tasks in these domains. When designing with this device, ensure proper decoupling and signal integrity practices are followed, as high-speed memory interfaces require careful PCB layout to minimize noise and reflections.
W634GU6RB12J - 4Gb DDR3L SDRAM 933MHz | Winbond
The W634GU6RB12J is a 4Gbit DDR3L SDRAM from Winbond Electronics, organized as 256M x 16 and operating at 1.35V. It features a parallel interface with a clock speed of 933 MHz (DDR3L-1866) and a CAS latency of 20 ns. The device is housed in a 96-ball VFBGA package (7.5x13 mm) and is designed for high-bandwidth memory applications. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high data rates. It is part of the DDR3L memory family, which is widely used in computing, networking, and industrial applications where power efficiency is critical. Key features include a 4Gbit density, x16 organization, 933 MHz clock speed, and support for the DDR3L-1866 specification. The device offers a burst length of 8 and supports on-die termination (ODT) for improved signal integrity. It operates over a temperature range of -40°C to +105°C (TCASE) for the 12J industrial plus grade, making it suitable for harsh environments. The W634GU6RB12J utilizes advanced DRAM process technology to achieve high speed and low power. It includes features such as programmable CAS latency, write leveling, and self-refresh modes to optimize performance and power consumption. The 96-ball VFBGA package provides excellent thermal and electrical performance. Typical applications include embedded systems, networking equipment, industrial automation, and automotive infotainment. The low voltage and high speed make it ideal for power-sensitive designs that require high memory bandwidth. When designing with this device, ensure proper decoupling and signal integrity practices are followed. The DDR3L interface requires careful PCB layout to minimize crosstalk and maintain signal quality at high speeds.
YZ48G08V-F9HPI-M - 8Gb DDR4 SDRAM, 3200 MT/s | Loongtion
The Loongtion YZ48G08V-F9HPI-M is an industrial-grade DDR4 SDRAM chip with a density of 8Gb, organized as 1G x 8. It operates at speeds up to 3200 MT/s (PC4-25600) and is available in an FBGA78 package, designed for wide-temperature applications from -40°C to +85°C. This memory component is a China-localized alternative to mainstream DDR4 parts, offering a domestic BOM path for industrial and embedded systems. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, making it essential for modern computing, networking, and industrial applications. DDR4 is part of the memory hierarchy, sitting between the CPU and storage, providing high-speed temporary data storage for active processes. Key features include a wide temperature range of -40°C to +85°C, which is critical for outdoor telecom, oil & gas, and industrial edge applications. The FBGA78 package is pin-compatible with standard x8 DDR4 devices, enabling drop-in replacement in existing designs. The device supports data rates up to 3200 MT/s, ensuring high bandwidth for demanding workloads. It is designed for reliability in harsh environments, with a focus on thermal stability and long-term endurance. Technically, the YZ48G08V-F9HPI-M uses advanced DRAM process technology to achieve high density and low power consumption. It features on-die termination (ODT), programmable read/write latency, and burst length of 8, optimizing signal integrity and performance. The device is compliant with JEDEC DDR4 standards, ensuring interoperability with standard memory controllers. Its industrial temperature rating distinguishes it from commercial-grade parts, making it suitable for applications where temperature extremes are common. Typical applications include industrial automation, outdoor telecom base stations, oil & gas exploration equipment, and embedded computing systems. The wide temperature range and high reliability make it ideal for environments where commercial memory would fail. It is also used in networking equipment, medical devices, and transportation systems that require robust memory solutions. When designing with this component, ensure proper decoupling and signal integrity practices are followed. The FBGA78 package requires careful PCB layout to minimize parasitic inductance and capacitance. Additionally, verify the memory controller's compatibility with the 3200 MT/s speed grade and the 1.2V supply voltage. For extreme temperature applications, consider thermal management to maintain optimal performance.