1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
MPN: 1ED3122MC12HXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.48 | $3.48 |
| 10 | $3.12 | $31.20 |
| 100 | $2.74 | $274.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.18 | $2,180.00 |
| 3,000 | $1.92 | $5,760.00 |
1ED3122MC12HXUMA1 Overview
An isolated gate driver is a power-semiconductor interface IC that provides galvanic isolation between a low-voltage control domain (logic-level PWM signals from an MCU or DSP) and a high-voltage power domain (the gate of a switching transistor). Within the broader taxonomy, isolated gate drivers belong to gate drivers -> driver ICs -> power management semiconductors -> discrete and module semiconductors. They sit in the signal chain immediately before the power switch and are essential whenever the controller and the switch must operate at different ground potentials, as in motor drives, solar inverters, and industrial welding equipment.
Key differentiating features of the 1ED3122MC12HXUMA1 include active Miller clamp circuitry that prevents parasitic turn-on of the power switch during fast dV/dt events, short-circuit clamping to protect the gate oxide during desaturation events, and undervoltage lockout (UVLO) for both primary and secondary sides. The integrated bootstrap diode option and 30 ns typical propagation delay enable high-frequency switching up to several hundred kHz with deterministic timing.
The device uses Infineon's coreless transformer (CT) isolation technology, which delivers 5.7 kVrms isolation rating and 8 kVpk surge withstand, exceeding many optocoupler-based alternatives in transient immunity and long-term reliability. Two output variants (inverting and non-inverting) are available within the same PG-DSO-8 footprint family, simplifying PCB layout reuse between complementary half-bridge channels.
Typical applications include driving IGBT modules in industrial motor control inverters, SiC MOSFET half-bridges in EV traction auxiliary converters, and IGBT-based three-level NPC topologies in solar string inverters. The wide 8V to 35V gate-drive supply range covers standard 15V and 20V gate-drive rails for both IGBTs and SiC MOSFETs.
When designing with this part, observe the creepage and clearance requirements of the PG-DSO-8-66 wide-body package to maintain the rated isolation, and place the bootstrap capacitor as close as possible to the VCC and VB pins to minimize parasitic inductance in hard-switched topologies.
Drop-in alternatives for 1ED3122MC12HXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1ED3122MC12HXUMA1 (same form factor and footprint) — differing in Package, MSL Level, Operating Temperature, Isolation Technology, Miller Clamp.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1ED3124MC12HXUMA1
✅ Drop-In✓ In Stock
$1.45 / Unit
View Datasheet →1ED020I12B2XUMA1
✅ Drop-In✓ In Stock
$2.65 / Unit
View Datasheet →1EDN7116GXTMA1
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →2EDN7534RXTMA1
✅ Drop-In✓ In Stock
$0.4 / Unit
View Datasheet →1ED3122MC12HXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated Gate Driver (single-channel) |
| Isolation Technology | Coreless Transformer (CT) |
| Isolation Voltage (Vrms) | 5.7 kVrms |
| Maximum Transient Isolation (Vpk) | 8 kVpk |
| Output Current (source / sink) | 10 A / 9 A |
| Configuration | High-side, non-inverting |
| Number of Channels | 1 |
| Supply Voltage (VCC / VBS) | 8 V to 35 V |
| Propagation Delay (typ.) | 30 ns |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns |
| Miller Clamp | Active (integrated) |
| Short-Circuit Clamping | Yes |
| UVLO | Primary and secondary side |
| Operating Temperature | -40 C to +125 C |
| Package | PG-DSO-8-66 (300-mil DSO-8) |
| Mounting Type | Surface Mount |
| MSL Level | 2 |
| RoHS Status | Compliant |
1ED3122MC12HXUMA1 Pin Configuration
| Pin 1 | VDD1 — Primary-side (input) supply voltage, 3.3V/5V logic level |
| Pin 2 | IN+ — Non-inverting PWM input from controller |
| Pin 3 | IN- — Inverting PWM input (tie to VDD1 if unused) |
| Pin 4 | GND1 — Primary-side (input) ground |
| Pin 5 | GND2 — Secondary-side (output) ground, isolated from GND1 |
| Pin 6 | VCC2 — Secondary-side gate-drive supply, 8V to 35V |
| Pin 7 | OUT — Gate-drive output to power switch gate |
| Pin 8 | CLAMP — Active Miller clamp output (to switch source/emitter) |
Typical Applications
1ED3122MC12HXUMA1 is suitable for 7 applications: Industrial Motor Drive Inverters, Solar String Inverters, EV Traction Auxiliary Converters, Industrial Welding Power Supplies, Uninterruptible Power Supplies (UPS), SiC MOSFET Half-Bridge Modules, High-Voltage Test Equipment.
Industrial Motor Drive Inverters
The 1ED3122MC12HXUMA1 drives 600V/1200V IGBT modules in three-phase industrial inverters controlling AC induction and permanent-magnet servo motors from 1 kW to 50 kW. Its 10A peak gate current charges module input capacitance (Cies) of several nF in tens of nanoseconds, minimizing switching losses that dominate inverter efficiency above 10 kHz PWM. The 5.7 kVrms isolation safely separates the MCU control domain from the DC-link up to 800V (240V AC mains) or 1200V (480V AC mains) industrial networks. Active Miller clamp prevents shoot-through caused by dV/dt-induced gate lift on the low-side switch during high-side turn-on, which is critical for industrial safety integrity. For servo drives, the 30 ns propagation delay enables deterministic dead-time insertion down to 100 ns, maximizing linear-modulation range and torque-ripple performance at low speeds.
Recommended
Solar String Inverters
In 1500V DC solar string inverters, the 1ED3122MC12HXUMA1 drives three-level NPC (I-type) IGBT switches at 50 kHz switching frequency with 1700V class devices. The wide 8V to 35V gate-drive supply range supports both 15V (standard IGBT) and 18V (SiC MOSFET optimized) rails without auxiliary LDO stages. Integrated short-circuit clamping limits gate-emitter voltage to a safe level during IGBT desaturation events, protecting expensive SiC MOSFET or IGBT modules from overvoltage damage. The 8 kVpk transient isolation withstand handles grid-side transients and lightning-induced surge events common in outdoor PV installations. Low quiescent current of 1.1 mA enables compliance with EU efficiency regulations for inverters in standby mode, and the PG-DSO-8-66 wide-body package meets reinforced insulation creepage requirements at 1500V DC working voltage.
Recommended
EV Traction Auxiliary Converters
The 1ED3122MC12HXUMA1 is suitable for 400V and 800V EV auxiliary DC-DC converters (typically 2-3 kW) that step the high-voltage traction battery down to 12V/48V for vehicle electrical systems. Its 5.7 kVrms isolation enables direct MCU interface across the high-voltage barrier without additional digital isolators, reducing BOM cost and PCB area. The coreless transformer isolation technology is rated for the automotive temperature range (-40C to +125C) and offers >20-year operational life without LED-degradation concerns typical of optocoupler-based drivers. Active Miller clamp ensures robust switching under the harsh EMI environment of an EV powertrain where dV/dt can exceed 50 kV/us during IGBT turn-off. Short-circuit clamping protects the IGBT during output short events, supporting ISO 26262 functional-safety analysis at ASIL-B and below when combined with appropriate desaturation detection.
Recommended
Industrial Welding Power Supplies
Inverter-based MIG/TIG welding machines (typically 200A to 500A output), the 1ED3122MC12HXUMA1 drives the primary-side IGBTs of a full-bridge or half-bridge topology operating at 20-100 kHz. The 10A peak source current ensures fast IGBT turn-on despite high gate-charge requirements of high-current modules, reducing switching losses that would otherwise require oversized heatsinks. Short-circuit clamping directly addresses the welding arc strike and short-circuit transfer events that occur thousands of times per minute in MIG welding - the clamp protects the gate oxide from voltage overshoot during these repeated short events. The 5.7 kVrms isolation rating provides robust separation between the digital control board and the rectified mains up to 600V DC-link voltage common in 3-phase 400V welding equipment. Compact PG-DSO-8-66 footprint simplifies integration into space-constrained welding torch and feeder enclosures.
Recommended
Uninterruptible Power Supplies (UPS)
Online double-conversion UPS systems (1-10 kVA) use the 1ED3122MC12HXUMA1 to drive the IGBT bridge in the inverter stage that converts battery DC back to regulated AC mains during power outages. Its 30 ns propagation delay and tight part-to-part matching enable paralleled inverter modules to share load with minimal circulating current - essential for N+1 redundant UPS configurations used in data centers and medical facilities. The 5.7 kVrms isolation safely bridges the 384V DC battery bus (typical for 220V AC UPS output) to the control logic, supporting the reinforced insulation required by IEC 62040-1. Active Miller clamp is critical during grid-to-battery and battery-to-grid transition events where both H-bridge legs may transition simultaneously. Integrated UVLO on both primary and secondary prevents partial-gate-drive conditions that would otherwise cause IGBT thermal runaway during low-battery voltage conditions.
Recommended
SiC MOSFET Half-Bridge Modules
The 1ED3122MC12HXUMA1 is well-suited to driving SiC MOSFET half-bridge modules in high-frequency applications such as EV onboard chargers, telecom rectifiers, and aerospace power converters. SiC MOSFETs switch 3-5x faster than silicon IGBTs, with dV/dt often exceeding 100 kV/us - the part's active Miller clamp is essential to prevent shoot-through under these aggressive transitions. Its 10A source / 9A sink current enables sub-10 ns rise/fall times into SiC MOSFET Cgs of 1-3 nF, fully exploiting the wide-bandgap device's switching-speed advantage. The 8V to 35V gate-drive supply range accommodates the +18V/-3V bipolar drive typically used to optimize SiC MOSFET Rds(on) while preventing gate-oxide overstress at turn-off. Coreless transformer isolation provides the high common-mode transient immunity (CMTI) >100 kV/us required for reliable SiC MOSFET switching without false triggering.
Recommended
High-Voltage Test Equipment
In high-voltage cable testers, partial-discharge detectors, and insulation testers operating at 10-50 kV DC test voltages, the 1ED3122MC12HXUMA1 drives the high-voltage step-up converter IGBTs that generate the test signal. Its 5.7 kVrms isolation is often insufficient for the full test voltage, so additional external isolation barriers (such as fiber-optic links) are used, but the 1ED3122MC12HXUMA1 drives the floating IGBT sections within each isolated converter cell. The 10A gate current rapidly charges the input capacitance of large press-pack IGBTs used in high-voltage cascade converters, maintaining the precise switching timing required for low-ripple test waveforms. Short-circuit clamping protects the IGBTs during cable-capacitance discharge events, where sudden current surges are common. The wide operating temperature range supports deployment in field-test equipment exposed to outdoor environments from -40C to +125C.
Recommended
Recommended Products Summary
Engineering reference data for 1ED3122MC12HXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED3124MC12HXUMA1 | 1ED020I12B2XUMA1 | 1EDN7116GXTMA1 | 2EDN7534RXTMA1 |
|---|---|---|---|---|---|
| Package | PG-DSO-8-66 (300-mil) | PG-DSO-8-66 (300-mil) - same | PG-DSO-8-66 (300-mil) - same | PG-DSO-8-66 - same | PG-DSO-8-66 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Output Current (source / sink) | 10 A / 9 A | 10 A / 9 A - same | 2 A / 2 A (-80%) | 4 A / 4 A (-60%) | 5 A / 5 A (-50%) |
| Isolation Voltage (Vrms) | 5.7 kVrms | 5.7 kVrms - same | 1.2 kVrms (-79%) | Non-isolated | Non-isolated |
| Number of Channels | 1 | 1 - same | 1 - same | 1 - same | 2 (dual low-side) |
| Configuration | High-side, non-inverting | High-side, inverting | High-side, inverting | Low-side | Dual low-side |
| Propagation Delay (typ.) | 30 ns | 30 ns - same | 40 ns (+33%) | 20 ns (-33%) | 20 ns (-33%) |
| Miller Clamp | Yes (active) | Yes (active) - same | Yes (active) - same | No | No |
| Supply Voltage (VCC2) | 8 V to 35 V | 8 V to 35 V - same | 13 V to 18 V (narrower) | 4.5 V to 20 V | 4.5 V to 20 V |
Key Differentiators
- Highest drive current in PG-DSO-8-66 isolated family (vs 1ED020I12B2XUMA1)
- 5.7 kVrms reinforced isolation vs lower-rated alternatives (vs 1ED020I12B2XUMA1)
- Pin-compatible inverting companion for complementary channels (vs 1ED3124MC12HXUMA1)
- Integrated Miller clamp vs external discrete solutions (vs 1EDN7116GXTMA1)
Design Notes
Place the VCC2 decoupling capacitor (typically 1uF X7R ceramic + 100nF X7R in parallel) within 2 mm of the VCC2 pin and the GND2 pin to minimize parasitic inductance that can cause gate-driver supply collapse during high-di/dt switching events. The PG-DSO-8-66 wide-body package provides 8 mm creepage - maintain at least 8 mm of clearance between primary-side (GND1) and secondary-side (GND2) copper pour on all PCB layers, including inner layers, to preserve the rated isolation. Use a slot in the PCB under the part body if your application requires reinforced insulation at pollution degree 2.
Do not place a gate resistor larger than 10 ohm on the OUT pin without verifying Miller-clamp effectiveness - the integrated clamp sinks current through a dedicated CLAMP pin that should connect directly to the power-switch source/emitter via its own 1-2 ohm path, bypassing the gate resistor. Driving the IN- input with an inverted signal without leaving it floating can cause shoot-through in the input logic stage; if unused, tie IN- to VDD1 per the Infineon datasheet. Verify the bootstrap refresh time (Tf) in half-bridge operation - if the high-side switch remains off for more than ~10 ms, the bootstrap capacitor discharges below UVLO threshold and the next turn-on may be incomplete.
Estimated: the PG-DSO-8-66 package has a typical theta_JA of 80 C/W on a 4-layer JEDEC test board. At 30 kHz switching frequency with 10A peak gate current and 10 nC gate charge, average driver dissipation is approximately 3 mW - thermal concerns are negligible. However, if the OUT pin drives a large module (>50A IGBT) with Qg of 200 nC at 15 kHz, dissipation rises to approximately 30 mW. In both cases the package remains well within thermal limits, but maintain at least 35 mm^2 of GND2 copper pour for thermal spreading.
Keep the OUT-to-gate trace shorter than 25 mm and 0.5 mm wide to minimize parasitic inductance that causes gate-voltage ringing and possible MOSFET Vgs overshoot. Use a separate gate-drive return trace from the power-switch source/emitter back to GND2, rather than sharing the power current path - this Kelvin-source connection prevents the source-inductance voltage from opposing the gate-drive voltage during turn-on. For multi-layer boards, place a solid GND2 plane immediately under the OUT trace to provide low-impedance return path and shield the gate-drive signal from switching-noise coupling.
Compliance Information
RoHS compliant per Infineon product page; halogen-free per JEDEC JS709B. AEC-Q100 qualification not specified for this part; the EiceDRIVER X3 Compact family is targeted at industrial (IEC 60747) rather than automotive (AEC-Q100) applications.
