2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon
MPN: 2ED2738S01GXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.95 | $950.00 |
2ED2738S01GXTMA1 Overview
A half-bridge gate driver is a critical building block in power electronics, providing the level-shifted control signals and gate charge management for a switching half-bridge. Gate drivers sit hierarchically above MOSFETs/IGBTs in the power conversion signal chain, translating low-power PWM logic from a microcontroller or controller IC into the high-current drive signals required to rapidly switch the power devices. SOI technology eliminates the parasitic latch-up path common in junction-isolated drivers, delivering robust negative transient immunity and integrated bootstrap diode functionality that simplifies half-bridge designs.
Key differentiating specifications include 4.0 A peak source / 8.0 A peak sink drive current, integrated bootstrap diode with internal current-limiting resistor, 120 ns typical propagation delay, 40 ns channel-to-channel matching, and 1.5 ns typical rise/fall time on a 1 nF load. The device operates from a 6 V to 20 V VDD supply and tolerates -10 V to +20 V transient negative voltages on the high-side output, with TTL-compatible logic inputs and integrated under-voltage lockout on both VCC and bootstrap rails.
Typical applications include BLDC motor drives for E-bikes, power tools, and drones; primary-side synchronous rectification in telecom and server SMPS; half-bridge and full-bridge converters for solar micro-inverters and Class-D audio amplifiers; and high-frequency DC-DC converters driving GaN or silicon MOSFETs. The Infineon SOI construction provides superior dv/dt immunity (50 kV/us typical) and negative transient voltage tolerance that junction-isolated drivers cannot match.
When designing with this device, place the bootstrap capacitor (typically 100 nF to 1 uF ceramic) directly between the BOOT and HS pins. The exposed thermal pad must be soldered to a sufficient PCB copper area to keep junction temperature within the 150 C maximum. For half-bridge applications, a small RC snubber on the phase node helps suppress ringing from power device switching transients.
Drop-in alternatives for 2ED2738S01GXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2ED2738S01GXTMA1 (same form factor and footprint) — differing in Package, MSL Level, Input Logic Compatibility, Number of Channels, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2ED2748S01GXTMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IRS2110SPBF
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →IR2110SPBF
✅ Drop-In✓ In Stock
$1.98 / Unit
View Datasheet →1ED3122MC12HXUMA1
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →2EDN7534RXTMA1
✅ Drop-In✓ In Stock
$0.4 / Unit
View Datasheet →UCC27714DR
✅ Drop-In📋 Reference alternative (not in catalog)
2ED2738S01GXTMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Output Current (Source, peak) | 4.0 A |
| Output Current (Sink, peak) | 8.0 A |
| Output Current (Source, typ) | 1.0 A |
| Output Current (Sink, typ) | 2.0 A |
| Number of Outputs | 1 |
| Input Type | Non-Inverting |
| Input Logic Compatibility | TTL |
| Supply Voltage (VDD/VCC) | 6 V to 20 V |
| Bootstrap Supply Voltage | Up to 600 V (HS pin rating) |
| Propagation Delay (typ) | 120 ns |
| Channel-to-Channel Match | 40 ns |
| Rise/Fall Time (1 nF load) | 1.5 ns / 1.5 ns |
| Negative Transient Immunity (HS) | -10 V to +20 V transient |
| Under-Voltage Lockout | VCC and Bootstrap |
| Bootstrap Diode | Integrated |
| Operating Temperature | -40C to +125C |
| Package | PG-VSON-10-5 (3x3 mm) with EP |
| Mounting Type | Surface Mount |
| MSL Level | 2 (1 year) |
| RoHS Status | Compliant |
2ED2738S01GXTMA1 Pin Configuration
| Pin 1 | HIN — High-side logic input (TTL-compatible) |
| Pin 2 | LIN — Low-side logic input (TTL-compatible) |
| Pin 3 | VSS — Logic and low-side gate return |
| Pin 4 | VCC — Low-side supply voltage (6-20 V) |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — Phase / half-bridge switching node |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VB — Bootstrap supply for high-side driver |
| Pin 9 | VDD — High-side logic supply (referenced to VS) |
| Pin 10 | NC — Not connected (per datasheet) |
Typical Applications
2ED2738S01GXTMA1 is suitable for 7 applications: BLDC Motor Drive - E-Bike / Power Tool, Telecom / Server SMPS Half-Bridge, Solar Micro-Inverter / DC-DC Optimizer, Class-D Audio Amplifier Half-Bridge, Drone / UAV ESC Motor Drive, Industrial Half-Bridge Welding / Plasma Cutter, EV On-Board Charger / DC-DC Converter.
BLDC Motor Drive - E-Bike / Power Tool
The 2ED2738S01GXTMA1's 8 A peak sink drive and 4 A source drive make it well matched to 36-72 V BLDC motor half-bridge stages. The Infineon SOI architecture provides 50 kV/us dv/dt immunity, suppressing false triggering on long motor cable leads in E-bike applications. The integrated bootstrap diode eliminates an external discrete, reducing BOM cost in 6-FET three-phase inverter modules used in 250-500 W power tools. With 120 ns propagation delay and 40 ns channel matching, the driver supports PWM frequencies up to 200 kHz, enabling 20 kHz+ audible-noise-free switching for quiet tool operation. The 3x3 mm PG-VSON-10-5 footprint fits within highly compact 50 mm diameter motor housings. Designers should keep the bootstrap capacitor above 100 nF and add a small gate resistor (10-22 ohm) to control ringing on the phase node.
Recommended
Telecom / Server SMPS Half-Bridge
The 2ED2738S01GXTMA1 drives the primary-side half-bridge in 1-3 kW telecom and server SMPS modules using 600 V silicon MOSFETs or IGBTs. Its 8 A peak sink drive enables direct gating of large die MOSFETs without external booster stages, reducing component count on the high-density 80 Plus Titanium power supply PCBs. The -10 V negative transient immunity on the HS pin protects the driver from ringing on the phase node during 100 V/ns MOSFET transitions. With integrated UVLO on both VCC and bootstrap rails, the driver guarantees safe startup and shutdown sequencing across the 12 V bias rail. Operating junction temperature to 125 C supports sealed hot-aisle server environments. Place the 100 nF bootstrap ceramic directly adjacent to pins 7-8 with the exposed pad tied to a 1 oz copper pour for thermal relief.
Recommended
Solar Micro-Inverter / DC-DC Optimizer
The 2ED2738S01GXTMA1 drives the high-frequency half-bridge in 600 V solar micro-inverters and module-level DC-DC optimizers, where its SOI level-shift technology eliminates the latch-up failure mode of junction-isolated drivers. The 8 A peak sink capability handles fast switching of 600 V silicon MOSFETs at 100-200 kHz, achieving >98% peak efficiency required by residential solar installations. The integrated bootstrap diode simplifies the BOM and reduces PCB area - critical in the IP67-rated enclosure form factor of micro-inverters. The driver's 50 kV/us dv/dt immunity ensures reliable operation under the harsh ringing conditions of long DC string cables. The 3x3 mm PG-VSON-10-5 footprint plus exposed thermal pad supports continuous full-power operation at 85 C ambient without external heatsinking, fitting within the 150 mm x 150 mm micro-inverter enclosure.
Recommended
Class-D Audio Amplifier Half-Bridge
The 2ED2738S01GXTMA1 drives the output half-bridge of 100-500 W Class-D audio amplifiers using 200-500 V MOSFETs or GaN HEMTs, where its 8 A peak sink drive and 1.5 ns rise/fall time preserve the 100 kHz switching edge fidelity required for low THD+N. The driver's matched 40 ns channel-to-channel delay minimizes dead-time distortion, which directly impacts audio crossover artifact and total harmonic distortion. The TTL-compatible inputs interface directly with popular Class-D controller ICs. The 3x3 mm PG-VSON-10-5 enables compact amplifier module layouts under 50 mm x 50 mm, and the SOI negative transient immunity protects against phase-node ringing when driving reactive speaker loads. Designers should add small gate-source resistors (10 kohm) to prevent MOSFET turn-on from capacitive coupling during power-off.
Recommended
Drone / UAV ESC Motor Drive
The 2ED2738S01GXTMA1 drives the 3-phase BLDC ESC (electronic speed controller) half-bridges in commercial drone and UAV propulsion systems where size, weight, and 50 kHz+ PWM are essential. Its 3x3 mm PG-VSON-10-5 footprint and 8 A peak drive capability directly gate 100 V-rated MOSFETs in ESCs rated up to 30 A continuous per phase. The driver's SOI dv/dt immunity prevents false triggering under the harsh common-mode transients generated by PWM transitions on long battery leads, and the integrated bootstrap diode reduces PCB real estate below 200 mm2 for the complete 6-FET power stage. The 120 ns propagation delay and 40 ns channel matching support up to 50 kHz PWM with deterministic dead-time, essential for high-rpm outrunner rotor smoothness. The exposed thermal pad supports continuous 30 A operation at 60 C ambient with a 1 square inch top-side copper pour.
Recommended
Industrial Half-Bridge Welding / Plasma Cutter
The 2ED2738S01GXTMA1 drives the high-current half-bridge in industrial welding inverters and plasma cutters operating at 30-100 kHz switching frequency. Its 8 A peak sink current directly drives large-die 600 V IGBTs without external booster stages, simplifying the gate drive path. The SOI technology's -10 V negative transient immunity is critical for plasma cutter applications where the phase node swings rapidly through negative voltages due to the highly inductive load. The driver's 120 ns propagation delay and matched channel timing enable precise torch current control and arc stability. The 3x3 mm PG-VSON-10-5 footprint fits within the compact power module footprint, and the exposed pad supports 5 W continuous dissipation. Design notes include adding a small gate emitter resistor (10 ohm) and a Miller clamp for IGBT operation above 400 V bus.
Recommended
EV On-Board Charger / DC-DC Converter
The 2ED2738S01GXTMA1 drives the primary-side half-bridge in 3.3 kW-11 kW EV on-board chargers (OBC) and high-voltage to low-voltage DC-DC converters used in xEV powertrains. Its 8 A peak drive current directly drives the 600 V CoolMOS primary MOSFETs, eliminating external gate drive booster stages in this AEC-Q100 demanding environment. The Infineon SOI technology's negative transient immunity (-10 V to +20 V) protects the driver from phase-node ringing during 100 V/ns MOSFET switching. The integrated bootstrap diode reduces the BOM by one component per half-bridge, critical in the cost-sensitive OBC market. With 120 ns propagation delay and 40 ns channel-to-channel matching, the driver supports the 100-200 kHz switching required for compact OBC designs. Place the bootstrap capacitor (100 nF-1 uF ceramic) directly adjacent to pins 7-8 with 1 square inch copper pour on the EP.
Recommended
Recommended Products Summary
Engineering reference data for 2ED2738S01GXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED2748S01GXTMA1 | IRS2110SPBF | IR2110SPBF | UCC27714DR | 1ED3122MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-VSON-10-5 (3x3 mm) | PG-VSON-10-5 - same | SOIC-16W - different | SOIC-16W - different | SOIC-14 - different | PG-DSO-8 - different |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Texas Instruments - different | Infineon - same |
| Driver Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Single isolated |
| Peak Source Current | 4.0 A | 4.0 A | 2.5 A | 2.5 A | 4.0 A | 10 A |
| Peak Sink Current | 8.0 A | 8.0 A | 2.5 A | 2.5 A | 4.0 A | 10 A |
| Supply Voltage | 6-20 V | 6-20 V | 10-20 V | 10-20 V | 10-20 V | 3-15 V |
| Bootstrap Diode | Integrated | Integrated | External | External | External | Isolated - N/A |
| Technology | SOI | SOI | Junction-isolated | Junction-isolated | Junction-isolated | Coreless transformer |
| Propagation Delay | 120 ns | 120 ns | 160 ns | 160 ns | 100 ns | 300 ns |
Key Differentiators
- Integrated bootstrap diode with SOI level shift (vs UCC27714DR (Texas Instruments))
- Higher peak drive current in compact package (vs IR2110SPBF (Infineon legacy))
- Matched 40 ns channel-to-channel delay (vs 1ED3122MC12HXUMA1 (isolated single channel))
Design Notes
Estimated: At 200 kHz switching with 1 nF gate load and 15 V VDD, gate drive power per channel is approximately 22.5 mW. Continuous total dissipation of 50-80 mW is well within the PG-VSON-10-5 1 W continuous rating. The exposed thermal pad must be soldered to PCB copper with at least 100 mm2 of 1 oz copper to keep junction rise below 30 C above ambient. For high-current IGBT applications driving 10+ nF gate charge, add an external gate resistor (5-22 ohm) to limit drive current and peak dissipation in the IC.
Place the bootstrap capacitor (100 nF to 1 uF X7R ceramic, 25 V minimum) directly between pins 7 (HO area: VB) and 6 (VS) with the loop area minimized to under 5 mm2. The integrated bootstrap diode supplies the high-side rail from VCC through this capacitor on each HS cycle. Place VCC bypass (1 uF ceramic) directly between pin 4 (VCC) and pin 3 (VSS). Keep logic input traces (HIN, LIN) away from the switching node (VS, HO) to prevent capacitive coupling-induced false triggering - maintain at least 2 mm creepage.
Do not exceed the maximum VCC supply of 20 V - this is a hard absolute maximum. Exceeding 20 V will permanently damage the gate driver. Under-voltage lockout (UVLO) is integrated on both VCC and bootstrap rails: VCC UVLO is approximately 4 V, BOOT UVLO is approximately 4 V referenced to VS, but verify in the latest datasheet revision. For systems with bus voltages above 600 V, add a transient voltage suppressor (TVS) clamp on the VS pin to limit dv/dt-induced negative transients below the -10 V rating.
The exposed thermal pad (EP) must be soldered to PCB copper to achieve rated thermal performance. Use a 5 x 5 array of thermal vias (0.3 mm drill, 1 mm pitch) connecting the EP to the bottom-layer ground pour. Keep the high-side switching loop (HO to VS to load to ground to VSS) and the low-side switching loop (VCC to LO to load to ground to VSS) physically separated to minimize switching noise coupling. Place the driver IC as close as possible (under 5 mm) to the power MOSFETs being driven to minimize gate-loop inductance.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100 qualification status not explicitly stated for this part - confirm with Infineon for automotive applications, or use the AEC-Q100 qualified IR2110SPBF/IRS2110SPBF as alternatives.
