1EDI3033ASXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1EDI3033ASXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDI3033ASXUMA1
1EDI3033ASXUMA1 - 12A SiC MOSFET Gate Driver, 5700Vrms | Infineon
1EDI3033ASXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1EDI3033ASXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.21 | $1.45 |
| Function | Isolated single-channel gate driver | β |
| Technology | Coreless transformer isolation | β |
| Output Current (Source/Sink) | 12 A typical | β |
| Isolation Voltage (Vrms) | 5700 Vrms | β |
| Number of Channels | 1 | β |
| Propagation Delay | 60 ns typical | β |
| Target Power Device | SiC MOSFET, IGBT | β |
| Package | PG-DSO-20-91 (wide-body) | PG-DSO-8 (DSO-8) |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | β |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Short-Circuit Protection | DESAT with programmable blanking | β |
| Miller Clamp | Active Miller clamp integrated | β |
| Bootstrap Diode | Integrated | β |
| Functional Safety | ISO 26262 ASIL D ready | β |
| Creepage Distance | 8 mm (typical for wide-body DSO-20) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Compliance | RoHS compliant | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |
| RoHS Status | β | Compliant |