1EDI3033ASXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1EDI3033ASXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDI3033ASXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,21 | $1,45 |
| Función | Isolated single-channel gate driver | — |
| Technology | Coreless transformer isolation | — |
| Output Current (Source/Sink) | 12 A typical | — |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Number of Channels | 1 | — |
| Propagation Delay | 60 ns typical | — |
| Target Power Device | SiC MOSFET, IGBT | — |
| Encapsulado | PG-DSO-20-91 (wide-body) | PG-DSO-8 (DSO-8) |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Short-Circuit Protection | DESAT with programmable blanking | — |
| Miller Clamp | Active Miller clamp integrated | — |
| Bootstrap Diode | Integrated | — |
| Functional Safety | ISO 26262 ASIL D ready | — |
| Creepage Distance | 8 mm (typical for wide-body DSO-20) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Compliance | RoHS compliant | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Número de salidas | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Estado RoHS | — | Compliant |