1EDN7116GXTMA1 vs 1ED3122MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7116GXTMA1 disebabkan oleh Infineon dan 1ED3122MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7116GXTMA1 1ED3122MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs —
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active Active (integrated)
UVLO Yes (VCC and gate-rail monitored) Primary and secondary side
Gambaran Suhu Operasi -40 °C to +125 °C —
Kemasan PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-DSO-8-66 (300-mil DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL3 2
Status RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Product Type — Isolated Gate Driver (single-channel)
Isolation Technology — Coreless Transformer (CT)
Isolation Voltage (Vrms) — 5.7 kVrms
Maximum Transient Isolation (Vpk) — 8 kVpk
Output Current (source / sink) — 10 A / 9 A
Configuration — High-side, non-inverting
Number of Channels — 1
Supply Voltage (VCC / VBS) — 8 V to 35 V
Propagation Delay (typ.) — 30 ns
Rise Time / Fall Time (typ.) — 15 ns / 30 ns
Short-Circuit Clamping — Yes
Suhu Operasi — -40 C to +125 C

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