1EDN7116GXTMA1 vs 1EDN7126GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 1EDN7116GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Function | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 1.5 A |
| Peak Sink Current | 4 A (typ) | 1.5 A |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| Operating Temperature Range | -40 °C to +125 °C | -40C to +125C |
| Package | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-VSON-10-4 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL3 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Common-Mode Voltage (CMR) | — | 200 V |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |