1EDN7116GXTMA1 vs 1EDN7126GXTMA1 对比
详细并排对比 1EDN7116GXTMA1 出自 Infineon 和 1EDN7126GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7116GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $0.29 |
| 功能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 1.5 A |
| Peak Sink Current | 4 A (typ) | 1.5 A |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 工作温度范围 | -40 °C to +125 °C | -40C to +125C |
| 封装 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-VSON-10-4 |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL3 | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Common-Mode Voltage (CMR) | — | 200 V |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |