1EDN7116GXTMA1 vs 2EDN7534RXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 2EDN7534RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7116GXTMA1

1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon

1EDN7116GXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7116GXTMA1 2EDN7534RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.40
Function Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver
Driver Configuration Non-inverting, single low-side β€”
Number of Drivers 1 β€”
Peak Source Current 2 A (typ) β€”
Peak Sink Current 4 A (typ) β€”
Input Type Truly Differential Input (TDI) β€”
Supply Voltage (VCC) 4.5 V to 5.5 V 4.5 V to 20 V
Switch-Node Blocking Voltage 200 V (max) β€”
Propagation Delay (Typ) 9 ns β€”
Rise Time (Typ) 3 ns β€”
Fall Time (Typ) 3 ns β€”
Quiescent Current (Typ) 0.6 mA β€”
Miller Clamp Integrated, active β€”
UVLO Yes (VCC and gate-rail monitored) β€”
Operating Temperature Range -40 Β°C to +125 Β°C β€”
Package PG-VSON-10-4 (3.0 mm Γ— 3.0 mm) PG-TSSOP-8
Mounting Type Surface Mount Surface Mount
MSL Level MSL3 1 (unlimited)
RoHS Status Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET β€”
Number of Channels β€” 2
Peak Output Current (source/sink) β€” 5 A / 5 A
Propagation Delay (typ) β€” 19 ns
Input Logic Compatibility β€” LV-TTL
Input Voltage Tolerance β€” -12 V to +22 V (absolute max)
Output Configuration β€” Non-inverting
Output Resistance (Ron) β€” <1 ohm (typ)
Under-Voltage Lockout (UVLO) β€” Yes
Operating Temperature β€” -40C to +125C
Lead-Free β€” Yes

Datasheets & Resources

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