1EDN7116GXTMA1 vs 2EDN7534RXTMA1 对比
详细并排对比 1EDN7116GXTMA1 出自 Infineon 和 2EDN7534RXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7116GXTMA1 | 2EDN7534RXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $0.40 |
| 功能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Low-side gate driver |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 4.5 V to 20 V |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 工作温度范围 | -40 °C to +125 °C | — |
| 封装 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-TSSOP-8 |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL3 | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Number of Channels | — | 2 |
| Peak Output Current (source/sink) | — | 5 A / 5 A |
| Propagation Delay (typ) | — | 19 ns |
| Input Logic Compatibility | — | LV-TTL |
| Input Voltage Tolerance | — | -12 V to +22 V (absolute max) |
| 输出配置 | — | Non-inverting |
| Output Resistance (Ron) | — | <1 ohm (typ) |
| Under-Voltage Lockout (UVLO) | — | Yes |
| 工作温度 | — | -40C to +125C |
| Lead-Free | — | Yes |