1EDN7146GXTMA1 vs 1EDN7550BXTSA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 1EDN7550BXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 β ActiveSpecification Comparison
| Parameter | 1EDN7146GXTMA1 | 1EDN7550BXTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.59 |
| Driver Type | High-side, single-channel | β |
| Number of Drivers | 1 | β |
| Logic Type | Non-Inverting | β |
| Input Type | TDI (Truly Differential Inductor) | Non-inverting, truly differential |
| Maximum Bootstrap Voltage (VB) | 200 V | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | β |
| Source/Sink Drive Current | 500 mA / 500 mA | β |
| Gate Drive Voltage | Up to 11 V (typ) | β |
| Propagation Delay (typ) | 40 ns | β |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | β |
| UVLO (VCC) | Yes | β |
| UVLO (VB) | Yes | β |
| Bootstrap Diode | Integrated | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-VSON-10-4 | PG-SOT23-6 (SOT-23-6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Driver Configuration | β | Single-channel, high-side / low-side |
| Peak Source Current | β | 4 A |
| Peak Sink Current | β | 8 A |
| Supply Voltage (VDD max) | β | 84 V |
| Minimum Input Pulse Width | β | 29 ns |
| Propagation Delay (typ.) | β | [DATA_NEEDED: propagation delay value] |
| Input Common-Mode Range | β | Up to 150 V |
| Channel-to-Channel Matching | β | 1.0 ns typ. |
| Internal Regulator | β | 4.7 V on input side |
| Logic Input Compatibility | β | TTL / CMOS |
| Under-Voltage Lockout (UVLO) | β | Yes |
| Operating Junction Temperature | β | -40 Β°C to +150 Β°C |