1EDN7511BXUSA1 vs 2EDN7533RXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7511BXUSA1 by Infineon and 2EDN7533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7511BXUSA1 2EDN7533RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.55
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Number of Outputs 1 —
Configuration Inverting, Non-Inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Rise Time [DATA_NEEDED: rise time ns] —
Fall Time 4.5 ns —
Propagation Delay ±5 ns (matched) —
Operating Supply Voltage [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS LV-TTL
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Operating Temperature Range -40 C to +150 C —
Package PG-SOT23-6-2 (6-pin SOT-23) PG-TSSOP-8 (HTSSOP) with exposed pad
Mounting Type Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
RoHS Status Compliant Compliant
Lead-Free Yes —
Function — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Operating Junction Temperature — -40 C to +150 C

Datasheets & Resources

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