2EDL6014ACG2DXTMA1 vs 2EDL8033G4CXTMA1 Comparison

Detailed side-by-side comparison of 2EDL6014ACG2DXTMA1 by Infineon and 2EDL8033G4CXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL6014ACG2DXTMA1 2EDL8033G4CXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) —
Output Configuration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Operating Temperature -40 C to +125 C —
Package 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-VDSON-10-2 (10-pin VDSON with exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
Mounting Type Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-Side / Low-Side, Non-Inverting
Number of Outputs — 2 (HS + LS)
Source Drive Current — 3 A
Sink Drive Current — 4 A
Bootstrap Voltage (Max) — 120 V
VCC Supply Voltage — 10 V to 20 V
Logic Input Compatibility — 3.3 V / 5 V CMOS / TTL
Isolation Technology — Junction-isolated
Propagation Delay (Typ) — 45 ns
Channel-to-Channel Matching — <10 ns
Integrated Bootstrap Diode — Yes
Operating Temperature Range — -40C to +125C
Marking Code — 2ED8033G4C
RoHS Status — Compliant

Datasheets & Resources

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