2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
MPN: 2EDL8124GXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
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View Datasheet β2EDL8124GXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-bridge (high-side + low-side) |
| Input Type | Non-inverting, TTL-compatible with hysteresis |
| Number of Drivers | 2 |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| Bootstrap Supply (VBS) Maximum | 120 V |
| Isolation Type | Junction isolation (JI) |
| Bootstrap Diode | Integrated |
| Propagation Delay (typical) | < 50 ns |
| UVLO | Present on VCC and VBS |
| Package | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
2EDL8124GXUMA1 Pin Configuration
| Pin 1 | VCC β Low-side driver supply (typical 10 V to 17 V) |
| Pin 2 | HIN β High-side PWM input (TTL-compatible with hysteresis) |
| Pin 3 | LIN β Low-side PWM input (TTL-compatible with hysteresis) |
| Pin 4 | GND β Low-side logic and gate return |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | HS β Switch node / high-side source return |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VBS β Bootstrap supply (up to 120 V), internal bootstrap diode to VCC |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2EDL8124GXUMA1 is suitable for 6 applications: 48 V Telecom/Datacom Point-of-Load Converter, Industrial Motor-Driver Half-Bridge Stage, Solar Micro-Inverter Power Stage, Server VRM and High-Density POL Buck, EV Auxiliary 48 V to 12 V DC-DC Converter, High-Frequency Synchronous Buck LED Driver.
48 V Telecom/Datacom Point-of-Load Converter
The 2EDL8124GXUMA1's 120 V VBS bootstrap rating and 3 A / 4 A source/sink gate current fit directly into 48 V bus intermediate bus converters (IBC) and downstream point-of-load (POL) buck stages used in telecom and datacom power architectures. Driving two N-channel MOSFETs in a synchronous half-bridge, the part delivers sub-50 ns propagation delay that keeps dead-time short at multi-MHz switching frequencies, minimizing body-diode conduction losses. Integrated bootstrap diode eliminates an external component, shrinking the BOM and reducing leakage paths. According to the Infineon datasheet, the UVLO on both VCC and VBS protects against low-voltage startup glitches that can otherwise damage the high-side FET gate.
Recommended
Industrial Motor-Driver Half-Bridge Stage
In industrial motor-driver power stages the 2EDL8124GXUMA1 drives the high-side and low-side IGBTs or MOSFETs of each half-bridge leg, providing the rapid 3 A / 4 A gate charge/discharge currents that keep switching losses low even at PWM frequencies above 50 kHz. The TTL-compatible inputs with hysteresis interface cleanly to 3.3 V or 5 V microcontrollers and DSPs without additional level shifters. Junction isolation provides robust common-mode noise immunity on the high-side channel, which is essential in motor environments with high dV/dt on the phase node. According to the Infineon datasheet, the wide VBS supply range supports bus voltages up to 100 V in industrial servo and BLDC drives.
Recommended
Solar Micro-Inverter Power Stage
Solar micro-inverters convert the 25 V to 60 V panel output to AC mains and use a high-frequency isolated DC-DC stage feeding a line-frequency unfolding bridge; the 2EDL8124GXUMA1 drives the primary-side MOSFETs of the push-pull or full-bridge isolation stage. The 120 V VBS rating gives 2x headroom for 60 V panel Voc (cold), and the integrated bootstrap diode simplifies the high-side supply path. According to the Infineon datasheet, the PG-VDSON-8-4 package with exposed pad fits the compact PCB area required inside a weatherproof micro-inverter housing while keeping junction temperature under control at continuous switching.
Recommended
Server VRM and High-Density POL Buck
In server and high-end desktop VRMs the 2EDL8124GXUMA1 drives the high-side and low-side FETs of multi-phase buck converters that step 12 V down to core voltages for CPUs, ASICs, and AI accelerators. The sub-50 ns propagation delay and matched rise/fall timing between the two channels minimize dead-time, reducing body-diode conduction losses and improving efficiency at multi-MHz per-phase switching frequencies. According to the Infineon datasheet, the 4 mm x 4 mm PG-VDSON-8-4 footprint enables the very high power density that 4-phase and 6-phase VRMs demand.
Recommended
EV Auxiliary 48 V to 12 V DC-DC Converter
Automotive 48 V mild-hybrid systems require compact, high-efficiency 48 V to 12 V DC-DC converters that fit under-hood thermal envelopes, and the 2EDL8124GXUMA1 is well-suited to the half-bridge primary stage of these converters. The 120 V VBS rating tolerates 48 V bus transients and load-dump events, while the 4 mm x 4 mm package helps pack the converter into the small volume available behind the dashboard or near the battery pack. According to the Infineon datasheet, junction isolation improves common-mode robustness in the electrically noisy automotive environment.
Recommended
High-Frequency Synchronous Buck LED Driver
High-brightness LED drivers for architectural, automotive headlamp, and stage lighting applications often use a synchronous buck topology with high switching frequency to shrink the inductor. The 2EDL8124GXUMA1 drives the high-side and low-side MOSFETs of such a buck stage, providing the matched propagation delay and fast edges that keep switching losses manageable above 1 MHz. The 120 V VBS rating covers up to 100 V LED string voltages, useful for horticulture and signage. According to the Infineon datasheet, the integrated bootstrap diode and UVLO simplify the design and protect the high-side gate during startup.
Recommended
Recommended Products Summary
Engineering reference data for 2EDL8124GXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDL8024GXTMA1 | 2EDL8124GXUMA2 | 2ED21844S06JXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VDSON-8-4 | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) |
| Configuration | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) |
| VBS Maximum | 120 V | 120 V | 120 V | 600 V | 600 V |
| Peak Source Current | 3 A | 3 A | 3 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Peak Sink Current | 4 A | 4 A | 4 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated |
| UVLO on VCC and VBS | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Integrated 120 V bootstrap diode in a 4 mm x 4 mm VSON package (vs UCC27714 (TI))
- Asymmetric 3 A source / 4 A sink peak current (vs 2EDL8024GXTMA1)
- PG-VDSON-8-4 footprint shared with the 2EDL8024, 2ED2184, and 2ED2106 families (vs Discrete bootstrap + driver approach)
Design Notes
Place the bootstrap capacitor (typically 100 nF X7R 25 V minimum, 50 V preferred) as physically close as possible to the VBS pin of the 2EDL8124GXUMA1, and connect its ground return directly to the SW/HS node pad rather than to the PGND plane. The high-side gate return path carries the full dV/dt of the switching node - any parasitic inductance in this return creates ground bounce that can re-trigger the high-side input. Use a wide, short trace or a dedicated return trace beneath the high-side driver pin.
Estimated: at continuous switching of 1 MHz with 30 nC Qg MOSFETs and 12 V VCC, the 2EDL8124GXUMA1 dissipates roughly P = 2 * Qg * VCC * fsw = 2 * 30 nC * 12 V * 1 MHz = 0.72 W. With a typical PG-VDSON-8-4 theta_JA near 40 C/W on a 1 oz 4-layer PCB with a 50 mm x 50 mm copper pour, the junction rises about 29 C above ambient. Above 2 W dissipation, add thermal vias beneath the exposed pad and enlarge the copper pour to keep Tj below the 150 C absolute maximum.
Do not exceed the 120 V VBS absolute maximum on the 2EDL8124GXUMA1; in 48 V bus designs the bootstrap cap can briefly exceed VCC + Vbus if the high-side on-time is very short, so verify the bootstrap refresh cycle in worst-case low-duty operation. Always include a TVS or snubber across the SW node to limit ringing that could otherwise exceed the VBS rating. Lastly, ensure the VCC decoupling capacitor (>= 1 uF X7R) sits within 2 mm of the VCC pin - undersized or distant VCC caps cause logic glitches on the LIN/HIN inputs.
Route the HIN and LIN traces as 50 ohm microstrip if their length exceeds 5 mm, and keep them at least 2 mm away from the SW/HS node trace to avoid capacitive coupling that can re-trigger the inputs. Place a small ferrite bead on the VCC supply if the upstream source is a switching converter that injects noise below 50 MHz. The exposed pad of the PG-VDSON-8-4 package must be soldered to a continuous copper pour with at least 6 thermal vias to the inner ground plane for adequate heat extraction.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - for automotive designs requiring AEC-Q100, an automotive-grade variant would need to be sourced separately. REACH and conflict-mineral statements follow Infineon's corporate compliance program.