2EDN7533RXTMA1 vs 2EDN7534RXTMA1 Comparison

Detailed side-by-side comparison of 2EDN7533RXTMA1 by Infineon and 2EDN7534RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDN7533RXTMA1 2EDN7534RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Dual-channel low-side gate driver Low-side gate driver
Number of Channels 2 2
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL LV-TTL
Input Voltage Tolerance -12 V to +22 V -12 V to +22 V (absolute max)
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
Operating Junction Temperature -40 C to +150 C —
Package PG-TSSOP-8 (HTSSOP) with exposed pad PG-TSSOP-8
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Peak Output Current (source/sink) — 5 A / 5 A
Supply Voltage (VCC) — 4.5 V to 20 V
Propagation Delay (typ) — 19 ns
Output Configuration — Non-inverting
Output Resistance (Ron) — <1 ohm (typ)
Under-Voltage Lockout (UVLO) — Yes
Operating Temperature — -40C to +125C
MSL Level — 1 (unlimited)
Lead-Free — Yes

Datasheets & Resources

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