2N7002LT1G vs 2N7002H6327XTSA2 Comparison
Detailed side-by-side comparison of 2N7002LT1G by onsemi and 2N7002H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002LT1G | 2N7002H6327XTSA2 |
|---|---|---|
| Brand | onsemi | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.02 | $0.08 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | Enhancement |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Package | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | — |
| Category | Small Signal MOSFET | — |
| Technology | MOSFET | OptiMOS (Planar) |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +150C (Tj) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |