2N7002LT1G vs 2N7002H6327XTSA2 Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und 2N7002H6327XTSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | 2N7002H6327XTSA2 |
|---|---|---|
| Marke | onsemi | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,08 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | Enhancement |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Gehäuse | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | OptiMOS (Planar) |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55C to +150C (Tj) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |