2N7002LT1G vs 2N7002H6327XTSA2 Comparación
Comparación detallada lado a lado de 2N7002LT1G por onsemi y 2N7002H6327XTSA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002LT1G | 2N7002H6327XTSA2 |
|---|---|---|
| Marca | onsemi | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,08 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | Enhancement |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Encapsulado | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 | — |
| Categoría | Small Signal MOSFET | — |
| Technology | MOSFET | OptiMOS (Planar) |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +150C (Tj) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Qualification | — | Industrial / Commercial Grade |