2N7002LT1G vs 2N7002L Comparison
Detailed side-by-side comparison of 2N7002LT1G by onsemi and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002LT1G | 2N7002L |
|---|---|---|
| Brand | onsemi | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.02 | $0.03 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Package | SOT-23-3 (TO-236) | SOT-23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | — |
| Category | Small Signal MOSFET | — |
| Technology | MOSFET | High cell density trench MOSFET |
| Manufacturer | onsemi (ON Semiconductor) | onsemi |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Transistor Type | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.5 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |