2N7002LT1G vs 2N7002L Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und 2N7002L von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | 2N7002L |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,03 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | Single FET |
| Gehäuse | SOT-23-3 (TO-236) | SOT-23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | High cell density trench MOSFET |
| Manufacturer | onsemi (ON Semiconductor) | onsemi |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Transistortyp | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.5 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |