2N7002LT1G vs 2N7002L 对比

详细并排对比 2N7002LT1G 出自 onsemi 和 2N7002L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 量产中

规格对比

参数 2N7002LT1G 2N7002L
品牌 onsemi onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.02 $0.03
Polarity N-Channel —
Channel Mode Enhancement Mode —
Drain-Source Voltage VDSS 60 V —
Continuous Drain Current ID 115 mA (Tc) —
Power Dissipation PD 225 mW (Ta) —
Maximum RDS(on) 7.5 ohm @ VGS = 5 V —
Configuration Single FET Single FET
封装 SOT-23-3 (TO-236) SOT-23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
引脚数 3 —
分类 Small Signal MOSFET —
Technology MOSFET High cell density trench MOSFET
Manufacturer onsemi (ON Semiconductor) onsemi
Lead Finish [DATA_NEEDED: lead finish/plating] —
工作温度范围 [DATA_NEEDED: operating temperature range] —
Packaging [DATA_NEEDED: packaging type] —
晶体管类型 — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 1 V to 2.5 V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting
RoHS 状态 — [DATA_NEEDED: RoHS status]

数据手册与资源

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