2N7002LT1G vs FDV301N Comparison

Detailed side-by-side comparison of 2N7002LT1G by onsemi and FDV301N by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002LT1G FDV301N
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.02 $0.08
Polarity N-Channel —
Channel Mode Enhancement Mode —
Drain-Source Voltage VDSS 60 V —
Continuous Drain Current ID 115 mA (Tc) —
Power Dissipation PD 225 mW (Ta) —
Maximum RDS(on) 7.5 ohm @ VGS = 5 V —
Configuration Single FET —
Package SOT-23-3 (TO-236) SOT-23-3
Mounting Type Surface Mount Surface Mount
Number of Pins 3 —
Category Small Signal MOSFET —
Technology MOSFET High cell density DMOS
Manufacturer onsemi (ON Semiconductor) —
Lead Finish [DATA_NEEDED: lead finish/plating] —
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Packaging [DATA_NEEDED: packaging type] —
Transistor Type — N-Channel Enhancement Mode MOSFET (Digital FET)
Drain-Source Voltage (Vdss) — 25 V
Continuous Drain Current (Id) — 220 mA (Ta)
Peak Drain Current — 0.5 A
RDS(on) at VGS = 2.7 V — 5 ohm (typical)
RDS(on) typical — 4 ohm
Power Dissipation (Pd) — 350 mW (Ta)
Gate Drive Type — Logic level (no bias resistors required)
Operating Temperature — [DATA_NEEDED: operating temperature range]
Gate-Source Voltage (Vgs) Max — [DATA_NEEDED: maximum gate-source voltage]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]
Thermal Resistance (RthJA) — [DATA_NEEDED: thermal resistance junction to ambient]
RoHS Status — [DATA_NEEDED: RoHS compliance status]
MSL Level — [DATA_NEEDED: moisture sensitivity level]

Datasheets & Resources

Browse All Products Create BOM Request Quote