AIKB40N65DH5ATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng AIKB40N65DH5ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
AIKB40N65DH5ATMA1 AIKB40N65DH5ATMA1 - 650V 40A TRENCHSTOP 5 IGBT | Infineon

AIKB40N65DH5ATMA1 - 650V 40A TRENCHSTOP 5 IGBT | Infineon

AIKB40N65DH5ATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro AIKB40N65DH5ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya IGBTs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number AIKB40N65DH5ATMA1 —
Technology TRENCHSTOP 5 (Trench + Field-Stop) Trench MOSFET (OptiMOS 3)
Uri ng Transistor IGBT NPT (Non-Punch-Through) —
Collector-Emitter Voltage (VCES) 650 V —
Continuous Collector Current (IC) at TC=100C 40 A —
Pulsed Collector Current (ICM) 74 A —
Gate-Emitter Voltage (VGES) +/-20 V —
VCE(sat) at IC=40 A, VGE=15 V, Tj=25C [DATA_NEEDED: VCE(sat) typical value] —
Co-packaged Diode RAPID 1 fast and soft antiparallel diode —
Packhaging PG-TO263-3-2 (D2PAK, surface mount) —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40C to +175C (junction) —
Automotive Qualification AEC-Q101 qualified (TRENCHSTOP 5 AUTO) —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Typical Applications EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita