AS4C512M16D4-75BCN vs AS4C512M16D4-75BCNTR Comparison

Detailed side-by-side comparison of AS4C512M16D4-75BCN by Alliance Memory and AS4C512M16D4-75BCNTR by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4-75BCN AS4C512M16D4-75BCN - 8Gb DDR4 SDRAM 2666MT/s | Alliance Memory

AS4C512M16D4-75BCN - 8Gb DDR4 SDRAM 2666MT/s | Alliance Memory

AS4C512M16D4-75BCN ✓ Active
Alliance Memory
AS4C512M16D4-75BCNTR AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory

AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory

AS4C512M16D4-75BCNTR ✓ Active

Specification Comparison

Parameter AS4C512M16D4-75BCN AS4C512M16D4-75BCNTR
Brand Alliance Memory Alliance Memory
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.75 $7.90
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16
Data Rate 2666 MT/s (DDR4-2666) 2666 Mbps per pin
Clock Frequency 1.333 GHz 1.333 GHz
Supply Voltage 1.2 V —
CAS Latency 18 —
Access Time 18 ns 18 ns
Number of Banks 16 —
Prefetch Architecture 8n 8n
Interface Parallel Parallel
Package 96-FBGA (7.5 mm x 13 mm) 96-ball FBGA (7.5 x 13 mm)
Operating Temperature Range 0C to +95C (Commercial) 0C to +95C (case, commercial)
Mounting Type Surface Mount (FBGA) Surface Mount
Packaging Tray —
Refresh Modes Auto-refresh, Self-refresh Auto-refresh and self-refresh
On-Die Termination Yes (ODT) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Standby Power [DATA_NEEDED: standby power] —
Write Cycle Time — 15 ns
Supply Voltage (VDD) — 1.2 V (range 1.14 V to 1.26 V)
Internal Bank Count — 16 banks
Process Technology — 20nm-class DRAM
Termination — On-die termination (ODT)
Packaging Option — Tape & Reel (TR suffix)
Lead-Free — Yes

Datasheets & Resources

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