AS4C512M16D4A-62BCN vs H5AN8G8NDJR Comparison

Detailed side-by-side comparison of AS4C512M16D4A-62BCN by Alliance Memory and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4A-62BCN AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN ✓ Active
SK hynix
H5AN8G8NDJR H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix

H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix

H5AN8G8NDJR ✓ Active

Specification Comparison

Parameter AS4C512M16D4A-62BCN H5AN8G8NDJR
Brand Alliance Memory SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.20 $24.50
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 1G x 8
Supply Voltage 1.2 V —
Data Rate 1600 MHz (3200 Mbps) 3200 MT/s
CAS Latency 18 ns 22 (typical)
Package 96-FBGA (7.5x13 mm) FBGA-78 (7.5x11 mm)
Operating Temperature 0°C to 95°C 0°C to +95°C (Tc)
Mounting Type Surface Mount —
JEDEC Standard Compliant —
Interface POD (Pseudo Open Drain) —
Refresh Auto-refresh and self-refresh —
On-Die Termination Yes —
RoHS Status Compliant —
Packaging Tray —
Density — 8 Gb
Supply Voltage (VDD) — 1.2 V (1.14V to 1.26V)
VDDQ — 1.2 V
VPP — 2.5 V
tRCD — 22 ns
tRP — 22 ns
Burst Length — 8 and 4 (with burst chop)
Self-Refresh Current — 30 mA (typical)
Active Standby Current — 60 mA (typical)
RoHS — Compliant
Lead-Free — Yes

Datasheets & Resources

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