AS4C512M16D4A-62BCN vs H5AN8G8NDJR 对比
详细并排对比 AS4C512M16D4A-62BCN 出自 Alliance Memory 和 H5AN8G8NDJR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ 量产中
规格对比
| 参数 | AS4C512M16D4A-62BCN | H5AN8G8NDJR |
|---|---|---|
| 品牌 | Alliance Memory | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.20 | $24.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 1G x 8 |
| 电源电压 | 1.2 V | — |
| 数据速率 | 1600 MHz (3200 Mbps) | 3200 MT/s |
| CAS 延迟 | 18 ns | 22 (typical) |
| 封装 | 96-FBGA (7.5x13 mm) | FBGA-78 (7.5x11 mm) |
| 工作温度 | 0°C to 95°C | 0°C to +95°C (Tc) |
| 安装类型 | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| 接口 | POD (Pseudo Open Drain) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| RoHS 状态 | Compliant | — |
| Packaging | Tray | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |