AUIRF7640S2TR vs AUIRF7769L2TR Comparison
Detailed side-by-side comparison of AUIRF7640S2TR by Infineon and AUIRF7769L2TR by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
AUIRF7640S2TR
AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
AUIRF7640S2TR β ActiveInfineon
AUIRF7769L2TR - 100V 3.5mΞ© 375A Automotive DirectFET MOSFET | Infineon
AUIRF7769L2TR β ActiveSpecification Comparison
| Parameter | AUIRF7640S2TR | AUIRF7769L2TR |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $4.78 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | β |
| Continuous Drain Current (ID) @ TC=25C | 21 A | β |
| Power Dissipation (PD) @ TA=25C | 2.4 W | β |
| Power Dissipation (PD) @ TC=25C | 30 W | β |
| On-Resistance RDS(on) | 36 mΞ© | β |
| Total Gate Charge (Qg) | 7.3 nC | β |
| Package | DirectFET SB (Surface Mount) | DirectFET Isometric L8 (DPAK footprint) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40C to +150C [DATA_NEEDED: junction temp upper limit] | [DATA_NEEDED: min/max junction temperature] |
| Technology | HEXFET Power MOSFET (Automotive Grade) | Automotive HEXFET Power MOSFET (trench) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | AEC-Q100 qualified |
| RoHS Status | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | β |
| Drain-to-Source Voltage (V<sub>DS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | β | 375 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | β | 3.5 mΞ© (typical) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | [DATA_NEEDED: V_GS(th) typical value] |
| Power Dissipation at T<sub>C</sub> | β | 125 W |
| Power Dissipation at T<sub>A</sub> | β | 3.3 W |
| Profile Height | β | 0.7 mm |
| Gate Charge (Q<sub>g</sub>) | β | [DATA_NEEDED: total gate charge] |