AUIRF7640S2TR vs AUIRF7769L2TR Comparación
Comparación detallada lado a lado de AUIRF7640S2TR por Infineon y AUIRF7769L2TR por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
AUIRF7769L2TR - 100V 3.5mΩ 375A Automotive DirectFET MOSFET | Infineon
AUIRF7769L2TR ✓ ActivoComparación de especificaciones
| Parámetro | AUIRF7640S2TR | AUIRF7769L2TR |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $4,78 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | — |
| Continuous Drain Current (ID) @ TC=25C | 21 A | — |
| Power Dissipation (PD) @ TA=25C | 2.4 W | — |
| Power Dissipation (PD) @ TC=25C | 30 W | — |
| On-Resistance RDS(on) | 36 mΩ | — |
| Total Gate Charge (Qg) | 7.3 nC | — |
| Encapsulado | DirectFET SB (Surface Mount) | DirectFET Isometric L8 (DPAK footprint) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -40C to +150C [DATA_NEEDED: junction temp upper limit] | [DATA_NEEDED: min/max junction temperature] |
| Technology | HEXFET Power MOSFET (Automotive Grade) | Automotive HEXFET Power MOSFET (trench) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | AEC-Q100 qualified |
| Estado RoHS | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | — | 375 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | — | 3.5 mΩ (typical) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Power Dissipation at T<sub>C</sub> | — | 125 W |
| Power Dissipation at T<sub>A</sub> | — | 3.3 W |
| Profile Height | — | 0.7 mm |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: total gate charge] |