AUIRF7640S2TR vs AUIRF7769L2TR 对比
详细并排对比 AUIRF7640S2TR 出自 Infineon 和 AUIRF7769L2TR 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | AUIRF7640S2TR | AUIRF7769L2TR |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $4.78 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A | — |
| Continuous Drain Current (ID) @ TC=25C | 21 A | — |
| Power Dissipation (PD) @ TA=25C | 2.4 W | — |
| Power Dissipation (PD) @ TC=25C | 30 W | — |
| On-Resistance RDS(on) | 36 mΩ | — |
| Total Gate Charge (Qg) | 7.3 nC | — |
| 封装 | DirectFET SB (Surface Mount) | DirectFET Isometric L8 (DPAK footprint) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -40C to +150C [DATA_NEEDED: junction temp upper limit] | [DATA_NEEDED: min/max junction temperature] |
| Technology | HEXFET Power MOSFET (Automotive Grade) | Automotive HEXFET Power MOSFET (trench) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) | AEC-Q100 qualified |
| RoHS 状态 | Compliant [DATA_NEEDED: confirmed in datasheet] | Compliant |
| Primary Application | Automotive Class D audio amplifier output stage | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | — | 375 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | — | 3.5 mΩ (typical) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Power Dissipation at T<sub>C</sub> | — | 125 W |
| Power Dissipation at T<sub>A</sub> | — | 3.3 W |
| Profile Height | — | 0.7 mm |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: total gate charge] |