BFU520A vs BFU520WF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BFU520A بواسطة NXP Semiconductors و BFU520WF بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BFU520A | BFU520WF |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Transistors | Transistors |
| حالة دورة الحياة | نشط | نشط |
| نوع الترانزستور | NPN silicon wideband RF transistor | — |
| العلبة | SOT23 (TO-236-3), 3-pin plastic | SOT323 (SC-70), 3-pin plastic |
| Maximum Operating Frequency | up to 2 GHz | — |
| Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Polarity | NPN | NPN |
| Product Family | BFU5 family | — |
| Application Class | High speed, low noise; small signal to medium power | — |
| نوع التركيب | Surface Mount | Surface Mount |
| جهد المجمع-الباعث (Vceo) | [DATA_NEEDED: VCEO] | — |
| تيار المجمّع (Ic) | [DATA_NEEDED: IC max] | — |
| تردد الانتقال (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: noise figure] | — |
| Gain (S21/Gp) | [DATA_NEEDED: gain] | — |
| تبديد القدرة (Ptot) | [DATA_NEEDED: Ptot] | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| حالة RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Application Frequency Range | — | Up to 2 GHz |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |