BFU520A vs BFU520WF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BFU520A disebabkan oleh NXP Semiconductors dan BFU520WF disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
BFU520A BFU520A - NPN Wideband RF Transistor SOT23 | NXP

BFU520A - NPN Wideband RF Transistor SOT23 | NXP

BFU520A ✓ Aktif
NXP Semiconductors
BFU520WF BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF ✓ Aktif

Pengandingan Spesifikasi

Parametr BFU520A BFU520WF
Merek NXP Semiconductors NXP Semiconductors
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor NPN silicon wideband RF transistor —
Kemasan SOT23 (TO-236-3), 3-pin plastic SOT323 (SC-70), 3-pin plastic
Maximum Operating Frequency up to 2 GHz —
Qualification AEC-Q101 qualified AEC-Q101 qualified
Polarity NPN NPN
Product Family BFU5 family —
Application Class High speed, low noise; small signal to medium power —
Jenis Pemasangan Surface Mount Surface Mount
Tegangan Pengumpul-Pemancar (Vceo) [DATA_NEEDED: VCEO] —
Arus Pengumpul (Ic) [DATA_NEEDED: IC max] —
Frekuensi Pertukaran (ft) [DATA_NEEDED: fT] —
Noise Figure NF [DATA_NEEDED: noise figure] —
Gain (S21/Gp) [DATA_NEEDED: gain] —
Pembuangan Kuasa (Ptot) [DATA_NEEDED: Ptot] —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Technology — Wideband silicon RF BJT, 11 GHz fT silicon technology
Collector-Emitter Breakdown Voltage (VCEO) — 12 V
Collector-Emitter Voltage (VCEO rating) — 12 V
Maximum Collector Current (IC max) — 30 mA
Total Power Dissipation (Ptot) — 450 mW
Transit Frequency (fT) — 11 GHz
Minimum Noise Figure (NFmin) — 0.6 dB at 900 MHz
Maximum Stable Gain (MSG) — 18.5 dB at 900 MHz
Application Frequency Range — Up to 2 GHz
Family — BFU5 family, small signal to medium power up to 2 GHz
DC Current Gain (hFE) — [DATA_NEEDED: hFE]
Collector-Base Capacitance (Ccb) — [DATA_NEEDED: Ccb]

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