BSC011N03LSIATMA1 vs BSC027N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC011N03LSIATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V OptiMOS 3
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Operating Junction Temperature -55 °C to +150 °C —
Package PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Power Dissipation (TC=25°C) — 83 W
Operating Temperature Range — -55°C to +150°C
Technology — OptiMOS 3 (Trench)
Halogen Free — Yes

Datasheets & Resources

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